JP4782463B2 - 半導体レーザの製造方法 - Google Patents

半導体レーザの製造方法 Download PDF

Info

Publication number
JP4782463B2
JP4782463B2 JP2005117322A JP2005117322A JP4782463B2 JP 4782463 B2 JP4782463 B2 JP 4782463B2 JP 2005117322 A JP2005117322 A JP 2005117322A JP 2005117322 A JP2005117322 A JP 2005117322A JP 4782463 B2 JP4782463 B2 JP 4782463B2
Authority
JP
Japan
Prior art keywords
layer
cladding layer
etching
semiconductor laser
cladding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005117322A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006295072A (ja
JP2006295072A5 (enExample
Inventor
恭宏 國次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2005117322A priority Critical patent/JP4782463B2/ja
Publication of JP2006295072A publication Critical patent/JP2006295072A/ja
Publication of JP2006295072A5 publication Critical patent/JP2006295072A5/ja
Application granted granted Critical
Publication of JP4782463B2 publication Critical patent/JP4782463B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Lasers (AREA)
JP2005117322A 2005-04-14 2005-04-14 半導体レーザの製造方法 Expired - Fee Related JP4782463B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005117322A JP4782463B2 (ja) 2005-04-14 2005-04-14 半導体レーザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005117322A JP4782463B2 (ja) 2005-04-14 2005-04-14 半導体レーザの製造方法

Publications (3)

Publication Number Publication Date
JP2006295072A JP2006295072A (ja) 2006-10-26
JP2006295072A5 JP2006295072A5 (enExample) 2008-05-08
JP4782463B2 true JP4782463B2 (ja) 2011-09-28

Family

ID=37415282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005117322A Expired - Fee Related JP4782463B2 (ja) 2005-04-14 2005-04-14 半導体レーザの製造方法

Country Status (1)

Country Link
JP (1) JP4782463B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4966591B2 (ja) * 2006-06-07 2012-07-04 日本オプネクスト株式会社 半導体発光素子の製造方法
JP2010067763A (ja) * 2008-09-10 2010-03-25 Mitsubishi Electric Corp 半導体光素子およびその製造方法
JP5949292B2 (ja) * 2012-08-03 2016-07-06 日亜化学工業株式会社 半導体レーザ素子の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH114042A (ja) * 1997-06-10 1999-01-06 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザおよびその製造方法
JPH11251678A (ja) * 1998-02-27 1999-09-17 Sanyo Electric Co Ltd 半導体レーザ及びその製造方法
JP2000340887A (ja) * 1999-05-26 2000-12-08 Sony Corp 半導体レーザおよびその製造方法
JP2002026453A (ja) * 2000-07-03 2002-01-25 Mitsubishi Electric Corp リッジ導波路型半導体レーザ及びその製造方法
JP2004342719A (ja) * 2003-05-14 2004-12-02 Toshiba Corp 半導体レーザ装置及びその製造方法

Also Published As

Publication number Publication date
JP2006295072A (ja) 2006-10-26

Similar Documents

Publication Publication Date Title
JPH11274637A (ja) 横結合分布帰還リッジ型半導体レーザ及びその製造方法
JP5212605B2 (ja) 半導体レーザ素子及びその作製方法
JP6206247B2 (ja) 半導体装置の製造方法
JPH09139550A (ja) 半導体レーザ装置の製造方法、及び半導体レーザ装置
JP2006059881A (ja) 半導体レーザ素子及びその製造方法
CN1610995B (zh) 半导体激光器及其制造方法
JP4589080B2 (ja) エッチング方法
JP4782463B2 (ja) 半導体レーザの製造方法
JP2863677B2 (ja) 半導体レーザ及びその製造方法
US20050271108A1 (en) Semiconductor laser device
US6335216B1 (en) Method for fabricating a semiconductor optical device having a ridge stripe
CN116613628B (zh) 具有侧壁光栅结构的边发射半导体发光结构及其制备方法
JP5872790B2 (ja) 半導体レーザ装置
JP4056717B2 (ja) 半導体レーザおよびその製造方法
JP2001308461A (ja) リッジ型半導体素子の作製方法
JP5722082B2 (ja) 窒化物半導体レーザ装置の製造方法
JPH08139411A (ja) 半導体レーザの製造方法
US20060093004A1 (en) Semiconductor laser device and method for manufacturing the same
JP4597357B2 (ja) 半導体レーザおよびその製造方法
JP2002324943A (ja) 自己整合型半導体レーザ素子
JP2002344080A (ja) 多角形半導体リングレーザの作製方法
JP2007335564A (ja) リッジ部を有する半導体素子の製造方法
JP2008098362A (ja) 半導体レーザ装置及びその製造方法
JP2006147906A5 (enExample)
JP2006086494A (ja) リッジ導波路型半導体レーザ素子の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080321

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080321

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101202

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101214

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110121

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110705

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110707

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140715

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees