JP4782463B2 - 半導体レーザの製造方法 - Google Patents

半導体レーザの製造方法 Download PDF

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Publication number
JP4782463B2
JP4782463B2 JP2005117322A JP2005117322A JP4782463B2 JP 4782463 B2 JP4782463 B2 JP 4782463B2 JP 2005117322 A JP2005117322 A JP 2005117322A JP 2005117322 A JP2005117322 A JP 2005117322A JP 4782463 B2 JP4782463 B2 JP 4782463B2
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Japan
Prior art keywords
layer
cladding layer
etching
semiconductor laser
cladding
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Expired - Fee Related
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JP2005117322A
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Japanese (ja)
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JP2006295072A5 (enrdf_load_stackoverflow
JP2006295072A (ja
Inventor
恭宏 國次
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2005117322A priority Critical patent/JP4782463B2/ja
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Publication of JP2006295072A5 publication Critical patent/JP2006295072A5/ja
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JP2005117322A 2005-04-14 2005-04-14 半導体レーザの製造方法 Expired - Fee Related JP4782463B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005117322A JP4782463B2 (ja) 2005-04-14 2005-04-14 半導体レーザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005117322A JP4782463B2 (ja) 2005-04-14 2005-04-14 半導体レーザの製造方法

Publications (3)

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JP2006295072A JP2006295072A (ja) 2006-10-26
JP2006295072A5 JP2006295072A5 (enrdf_load_stackoverflow) 2008-05-08
JP4782463B2 true JP4782463B2 (ja) 2011-09-28

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JP2005117322A Expired - Fee Related JP4782463B2 (ja) 2005-04-14 2005-04-14 半導体レーザの製造方法

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JP (1) JP4782463B2 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4966591B2 (ja) * 2006-06-07 2012-07-04 日本オプネクスト株式会社 半導体発光素子の製造方法
JP2010067763A (ja) * 2008-09-10 2010-03-25 Mitsubishi Electric Corp 半導体光素子およびその製造方法
JP5949292B2 (ja) * 2012-08-03 2016-07-06 日亜化学工業株式会社 半導体レーザ素子の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH114042A (ja) * 1997-06-10 1999-01-06 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザおよびその製造方法
JPH11251678A (ja) * 1998-02-27 1999-09-17 Sanyo Electric Co Ltd 半導体レーザ及びその製造方法
JP2000340887A (ja) * 1999-05-26 2000-12-08 Sony Corp 半導体レーザおよびその製造方法
JP2002026453A (ja) * 2000-07-03 2002-01-25 Mitsubishi Electric Corp リッジ導波路型半導体レーザ及びその製造方法
JP2004342719A (ja) * 2003-05-14 2004-12-02 Toshiba Corp 半導体レーザ装置及びその製造方法

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JP2006295072A (ja) 2006-10-26

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