JP4780950B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP4780950B2 JP4780950B2 JP2004335431A JP2004335431A JP4780950B2 JP 4780950 B2 JP4780950 B2 JP 4780950B2 JP 2004335431 A JP2004335431 A JP 2004335431A JP 2004335431 A JP2004335431 A JP 2004335431A JP 4780950 B2 JP4780950 B2 JP 4780950B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- external connection
- conductor
- line
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000000758 substrate Substances 0.000 claims description 90
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
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- 238000010438 heat treatment Methods 0.000 description 20
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
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- 229910052783 alkali metal Inorganic materials 0.000 description 3
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- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
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- 125000000217 alkyl group Chemical group 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
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- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- UIZLQMLDSWKZGC-UHFFFAOYSA-N cadmium helium Chemical compound [He].[Cd] UIZLQMLDSWKZGC-UHFFFAOYSA-N 0.000 description 1
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- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- 239000011133 lead Substances 0.000 description 1
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- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
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- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
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- 229910052712 strontium Inorganic materials 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- 150000003624 transition metals Chemical class 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004335431A JP4780950B2 (ja) | 2003-11-21 | 2004-11-19 | 表示装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003391815 | 2003-11-21 | ||
| JP2003391815 | 2003-11-21 | ||
| JP2004335431A JP4780950B2 (ja) | 2003-11-21 | 2004-11-19 | 表示装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011000964A Division JP5005098B2 (ja) | 2003-11-21 | 2011-01-06 | 表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005173579A JP2005173579A (ja) | 2005-06-30 |
| JP2005173579A5 JP2005173579A5 (enExample) | 2007-12-20 |
| JP4780950B2 true JP4780950B2 (ja) | 2011-09-28 |
Family
ID=34742012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004335431A Expired - Fee Related JP4780950B2 (ja) | 2003-11-21 | 2004-11-19 | 表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4780950B2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100765261B1 (ko) | 2006-07-11 | 2007-10-09 | 삼성전자주식회사 | 표시장치 |
| KR100907414B1 (ko) | 2008-01-18 | 2009-07-10 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시장치 |
| KR100907415B1 (ko) | 2008-01-18 | 2009-07-10 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시장치 |
| DE102009046755A1 (de) * | 2009-11-17 | 2011-05-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Organisches photoelektrisches Bauelement |
| JP5977233B2 (ja) * | 2010-07-07 | 2016-08-24 | エルジー ディスプレイ カンパニー リミテッド | 封止構造を含む有機発光素子 |
| JP6042187B2 (ja) * | 2012-11-30 | 2016-12-14 | 株式会社ジャパンディスプレイ | Oled表示装置 |
| KR101588498B1 (ko) * | 2013-07-24 | 2016-01-25 | 주식회사 엘지화학 | 연성인쇄회로기판의 구조체의 제조방법 |
| KR101588927B1 (ko) | 2013-07-24 | 2016-01-26 | 주식회사 엘지화학 | 연성인쇄회로기판의 구조체 |
| US9704888B2 (en) * | 2014-01-08 | 2017-07-11 | Apple Inc. | Display circuitry with reduced metal routing resistance |
| JP6230627B2 (ja) * | 2014-01-29 | 2017-11-15 | パイオニアOledライティングデバイス株式会社 | 発光装置 |
| JP2015153581A (ja) * | 2014-02-13 | 2015-08-24 | パイオニア株式会社 | 発光素子 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0278191A (ja) * | 1988-09-13 | 1990-03-19 | Fukuvi Chem Ind Co Ltd | エレクトロルミネッセンス |
| JPH02227989A (ja) * | 1989-02-28 | 1990-09-11 | Sharp Corp | 薄膜el表示装置 |
| JPH04147219A (ja) * | 1990-10-11 | 1992-05-20 | Hitachi Ltd | 液晶表示素子 |
| US6281891B1 (en) * | 1995-06-02 | 2001-08-28 | Xerox Corporation | Display with array and multiplexer on substrate and with attached digital-to-analog converter integrated circuit having many outputs |
| JP2900938B1 (ja) * | 1998-06-08 | 1999-06-02 | 日本電気株式会社 | 有機薄膜elパネル及びその製造方法 |
| JP2000243555A (ja) * | 1999-02-17 | 2000-09-08 | Toyota Motor Corp | 有機el表示装置 |
| TW465122B (en) * | 1999-12-15 | 2001-11-21 | Semiconductor Energy Lab | Light-emitting device |
| JP2002032037A (ja) * | 2000-05-12 | 2002-01-31 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP3501218B2 (ja) * | 2000-08-11 | 2004-03-02 | 日本電気株式会社 | フラットパネル表示モジュール及びその製造方法 |
| JP2002108252A (ja) * | 2000-09-29 | 2002-04-10 | Sanyo Electric Co Ltd | エレクトロルミネセンス表示パネル |
| JP4880833B2 (ja) * | 2001-07-31 | 2012-02-22 | パナソニック株式会社 | 電子部品、部品実装装置、及び部品実装方法 |
| JP2003280551A (ja) * | 2002-03-22 | 2003-10-02 | Dainippon Printing Co Ltd | 画像表示装置 |
| JP2003288980A (ja) * | 2002-03-28 | 2003-10-10 | Fuji Photo Film Co Ltd | 発光素子 |
| JP4165120B2 (ja) * | 2002-05-17 | 2008-10-15 | 株式会社日立製作所 | 画像表示装置 |
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