JP4776766B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4776766B2
JP4776766B2 JP2000326049A JP2000326049A JP4776766B2 JP 4776766 B2 JP4776766 B2 JP 4776766B2 JP 2000326049 A JP2000326049 A JP 2000326049A JP 2000326049 A JP2000326049 A JP 2000326049A JP 4776766 B2 JP4776766 B2 JP 4776766B2
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Japan
Prior art keywords
film
organic resin
region
substrate
insulating film
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Expired - Fee Related
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JP2000326049A
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English (en)
Japanese (ja)
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JP2001196597A5 (enrdf_load_stackoverflow
JP2001196597A (ja
Inventor
美佐子 仲沢
健司 笠原
久 大谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000326049A priority Critical patent/JP4776766B2/ja
Publication of JP2001196597A publication Critical patent/JP2001196597A/ja
Publication of JP2001196597A5 publication Critical patent/JP2001196597A5/ja
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Publication of JP4776766B2 publication Critical patent/JP4776766B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2000326049A 1999-10-26 2000-10-25 半導体装置の作製方法 Expired - Fee Related JP4776766B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000326049A JP4776766B2 (ja) 1999-10-26 2000-10-25 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP11-304722 1999-10-26
JP30472299 1999-10-26
JP1999304722 1999-10-26
JP2000326049A JP4776766B2 (ja) 1999-10-26 2000-10-25 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011051223A Division JP5412454B2 (ja) 1999-10-26 2011-03-09 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001196597A JP2001196597A (ja) 2001-07-19
JP2001196597A5 JP2001196597A5 (enrdf_load_stackoverflow) 2007-12-20
JP4776766B2 true JP4776766B2 (ja) 2011-09-21

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Family Applications (1)

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JP2000326049A Expired - Fee Related JP4776766B2 (ja) 1999-10-26 2000-10-25 半導体装置の作製方法

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JP (1) JP4776766B2 (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4683691B2 (ja) * 2000-05-16 2011-05-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002368224A (ja) 2001-06-04 2002-12-20 Sony Corp 機能性デバイスおよびその製造方法
TW552645B (en) * 2001-08-03 2003-09-11 Semiconductor Energy Lab Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
JP4008716B2 (ja) 2002-02-06 2007-11-14 シャープ株式会社 フラットパネル表示装置およびその製造方法
US7541617B2 (en) 2003-02-14 2009-06-02 Canon Kabushiki Kaisha Radiation image pickup device
JP2004265933A (ja) * 2003-02-14 2004-09-24 Canon Inc 放射線検出装置
JP2006203121A (ja) * 2005-01-24 2006-08-03 Seiko Epson Corp 半導体装置、アクティブマトリクス型電気光学装置、電子機器、および半導体装置の製造方法
KR101460869B1 (ko) 2009-09-04 2014-11-11 가부시끼가이샤 도시바 박막 트랜지스터 및 그 제조 방법
WO2016059497A1 (en) * 2014-10-17 2016-04-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, module, electronic device, and method for manufacturing light-emitting device
JP6330112B1 (ja) * 2017-03-08 2018-05-23 堺ディスプレイプロダクト株式会社 有機ｅｌデバイスの製造方法および成膜装置
WO2019142261A1 (ja) * 2018-01-17 2019-07-25 シャープ株式会社 表示装置及びその製造方法
JP2020161580A (ja) * 2019-03-26 2020-10-01 株式会社ブイ・テクノロジー デバイス基板およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150200A (ja) * 1996-11-19 1998-06-02 Sharp Corp 薄膜トランジスタおよびその製造方法

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JP2001196597A (ja) 2001-07-19

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