JP4765101B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4765101B2 JP4765101B2 JP2006011791A JP2006011791A JP4765101B2 JP 4765101 B2 JP4765101 B2 JP 4765101B2 JP 2006011791 A JP2006011791 A JP 2006011791A JP 2006011791 A JP2006011791 A JP 2006011791A JP 4765101 B2 JP4765101 B2 JP 4765101B2
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- JP
- Japan
- Prior art keywords
- heat sink
- heat
- metal base
- metal
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
前記金属ベースおよびヒートシンクの少なくとも一方の表面に、4フッ化エチレン、Auまたは珪酸ガラスを保護層としてコーティングし、前記金属ベースとヒートシンクとの間に多孔質金属を基材とする熱伝導体を介挿し、該熱伝導体を介して金属ベースとヒートシンクとの間を伝熱結合するものとし(請求項1)、具体的には次記のような態様で構成することができる。
(1)前記の金属ベースおよびヒートシンクの材質が純銅または純アルミである(請求項2)。
(2)前記の熱伝導体が、多孔質金属を基材としてその気孔を伝熱性浸透物質で充填した構造体である(請求項3)。
(3)前項(2)における浸透物質が、オイル成分,ないしオイル成分に無機質もしくは金属の微粒子を加えた流動性材である(請求項4)。
2 金属ベース
3 絶縁基板
4 パワー半導体チップ(IGBT)
7 ヒートシンク
8 締結ネジ
9 熱伝導体
10 多孔質金属
11 浸透物質
Claims (4)
- パワー半導体チップを絶縁基板にマウントした上で、該絶縁基板をパッケージの放熱用金属ベース上に搭載した組立構造になる半導体モジュールをヒートシンクに実装した半導体装置において、
前記金属ベースおよびヒートシンクの少なくとも一方の表面に、4フッ化エチレン、Auまたは珪酸ガラスを保護層としてコーティングし、前記金属ベースとヒートシンクとの間に多孔質金属を基材とする熱伝導体を介挿し、該熱伝導体を介して金属ベースとヒートシンクとの間を伝熱結合したことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、前記金属ベースおよびヒートシンクの材質が純銅または純アルミであることを特徴とする半導体装置。
- 請求項1に記載の半導体装置において、熱伝導体が、多孔質金属を基材としてその気孔を伝熱性浸透物質で充填した構造体になることを特徴とする半導体装置。
- 請求項3に記載の半導体装置において、浸透物質がオイル成分,ないしオイル成分に無機質もしくは金属の微粒子を加えた流動性材であることを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006011791A JP4765101B2 (ja) | 2006-01-20 | 2006-01-20 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006011791A JP4765101B2 (ja) | 2006-01-20 | 2006-01-20 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007194442A JP2007194442A (ja) | 2007-08-02 |
JP4765101B2 true JP4765101B2 (ja) | 2011-09-07 |
Family
ID=38449893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006011791A Expired - Fee Related JP4765101B2 (ja) | 2006-01-20 | 2006-01-20 | 半導体装置 |
Country Status (1)
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JP (1) | JP4765101B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8057094B2 (en) * | 2007-11-16 | 2011-11-15 | Infineon Technologies Ag | Power semiconductor module with temperature measurement |
JP5333817B2 (ja) * | 2008-03-31 | 2013-11-06 | 株式会社野毛電気工業 | 被検体欠陥部等の赤外線検査方法 |
JP5954410B2 (ja) | 2012-03-28 | 2016-07-20 | 富士電機株式会社 | 半導体装置 |
JP5835466B2 (ja) | 2012-03-28 | 2015-12-24 | 富士電機株式会社 | 半導体装置 |
WO2013145619A1 (ja) | 2012-03-28 | 2013-10-03 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6171586B2 (ja) | 2013-06-04 | 2017-08-02 | 富士電機株式会社 | 半導体装置 |
CN105051898B (zh) | 2013-08-23 | 2018-01-16 | 富士电机株式会社 | 半导体装置 |
JP6201532B2 (ja) | 2013-08-30 | 2017-09-27 | 富士電機株式会社 | 半導体装置 |
US9420731B2 (en) * | 2013-09-18 | 2016-08-16 | Infineon Technologies Austria Ag | Electronic power device and method of fabricating an electronic power device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0268493U (ja) * | 1988-11-12 | 1990-05-24 | ||
JP3180622B2 (ja) * | 1995-06-09 | 2001-06-25 | 三菱マテリアル株式会社 | パワーモジュール用基板及びその製造方法 |
JPH11233696A (ja) * | 1998-02-17 | 1999-08-27 | Mitsubishi Electric Corp | パワー半導体モジュール及びパワー半導体モジュールと冷却装置の接合体 |
JP2000150742A (ja) * | 1998-11-18 | 2000-05-30 | Shibafu Engineering Kk | 伝熱シート、半導体装置及び伝熱シートの製造方法 |
JP2004298962A (ja) * | 2003-03-17 | 2004-10-28 | Mitsubishi Materials Corp | はんだ接合材及びこれを用いたパワーモジュール基板 |
JP2005347500A (ja) * | 2004-06-03 | 2005-12-15 | Fuji Electric Holdings Co Ltd | 電子部品の放熱部材 |
-
2006
- 2006-01-20 JP JP2006011791A patent/JP4765101B2/ja not_active Expired - Fee Related
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JP2007194442A (ja) | 2007-08-02 |
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