JP4763293B2 - 光放射によるシステムコンポーネントへの材料物質付着のモニタリング - Google Patents
光放射によるシステムコンポーネントへの材料物質付着のモニタリング Download PDFInfo
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
- G01N21/68—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence using high frequency electric fields
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
Description
本出願は、2002年12月31日に出願された米国特許出願第10/331,456号に関連する、前記同じ日に出願された米国特許出願第10/331,349号による優先権を主張する。これらの出願の各々の内容全体は、参照してここに組み込まれる。
Claims (43)
- プラズマ処理システムのシステムコンポーネントへの材料物質の付着を判断する方法であって、
システムコンポーネント内に少なくとも部分的に包み込まれ、プラズマにさらされたときに、蛍光放射が可能なエミッタを含む前記システムコンポーネントをプラズマにさらすことと、
プロセス中に、前記プラズマ処理システムの前記システムコンポーネント内に少なくとも部分的に包み込まれた前記エミッタからの蛍光放射を、前記システムコンポーネントへの付着を判断するようにモニタリングすることと、
前記モニタリングされた蛍光放射の強度レベルが前記システムコンポーネントのクリーニングまたは交換を必要とする閾値を超えているか否かを判断することとを具備する方法。 - 前記蛍光放射は、前記システムコンポーネントへの材料物質の付着の量に関連する請求項1に記載の方法。
- 前記システムコンポーネントは、リング、シールド、電極、バッフル及びライナのうちの少なくとも1つを備えている請求項1に記載の方法。
- 前記エミッタは、プラズマ中で生成された光によって励起された場合に、蛍光特性を有する少なくとも1つの物質を備えている請求項1に記載の方法。
- 前記エミッタは、プラズマ中で生成された励起ガス種によって励起された場合に、蛍光特性を有する少なくとも1つの物質を備えている請求項1に記載の方法。
- 前記モニタリングすることは、前記蛍光放射を検出する光モニタリングシステムを用いることを備えている請求項1に記載の方法。
- 前記モニタリングすることは、前記蛍光放射の強度レベルが閾値を下回るか否かを判断することを備えている請求項6に記載の方法。
- 前記モニタリングすることは、前記システムコンポーネントに独自に関連づけられた前記蛍光放射の波長から前記システムコンポーネントを識別することをさらに備えている請求項6に記載の方法。
- 前記モニタリングすることは、前記コンポーネントをクリーニングまたは交換する必要があるか否か、および前記判断に基づいて、前記プロセスを続行するかまたは前記プロセスを停止するかの判断を下すように、前記蛍光放射の強度レベルを測定することをさらに備えている請求項6に記載の方法。
- プラズマ処理システムのシステムコンポーネントへの材料物質の付着を判断する方法であって、
システムコンポーネント内に少なくとも部分的に包み込まれ、プラズマにさらされたときに、蛍光放射が可能なエミッタを含む前記システムコンポーネントをプラズマにさらすことと、
プロセス中に、前記プラズマ処理システムの前記システムコンポーネント内に少なくとも部分的に包み込まれた前記エミッタからの蛍光放射をモニタリングすることとを具備し、
前記モニタリングすることは、前記蛍光放射の波長及び強度レベルを検出する光モニタリングシステムを用いることと、前記システムコンポーネントに独自に関連づけられた前記蛍光放射の波長から前記システムコンポーネントを識別することと、前記強度レベルから前記システムコンポーネントへの材料物質の付着の量を判断することとを含んでいる方法。 - プラズマ処理チャンバと、
プロセスガスからプラズマを生成するように構成されたプラズマ源と、
システムコンポーネント内に少なくとも部分的に包み込まれ、プラズマにさらされたときに、蛍光放射が可能なエミッタを含む前記システムコンポーネントと、
プロセス中に、前記プラズマ処理チャンバの前記システムコンポーネント内に少なくとも部分的に包み込まれた前記エミッタからの蛍光放射を、前記システムコンポーネントへの材料物質の付着を判断するようにモニタリングする光モニタリングシステムと、
プラズマ処理システムを制御し、前記蛍光放射の強度レベルが前記システムコンポーネントのクリーニングまたは交換を必要と示す閾値を超えているかを判断するように構成されたコントローラとを具備するプラズマ処理システム。 - 前記システムコンポーネントは、リング、シールド、電極、バッフル、及びライナのうちの少なくとも1つを備えている請求項11に記載のシステム。
- 前記システムコンポーネントは、シリコン、石英、アルミナ、カーボン、シリコンカーバイド、アルミニウム、及びステンレス鋼のうちの少なくとも1つから製造される請求項11に記載のシステム。
- 前記エミッタは、プラズマ中で生成された光によって励起された場合に、蛍光特性を有する少なくとも1つの物質を含んでいる請求項11に記載のシステム。
- 前記エミッタは、プラズマ中で生成された励起ガス種によって励起された場合に、蛍光特性を有する少なくとも1つの物質を含んでいる請求項11に記載のシステム。
- 前記少なくとも1つの物質は、リン光体物質を含んでいる請求項15に記載のシステム。
- 前記リン光体物質は、Y2O3:Eu、Y2O2S:Eu、Y2O2S:Tb、Y2O2S:EuTb、ZnS:Cu、ZnS:Al、ZnS:CuAl、ZnS:Ag、ZnS:Au、ZnS:Cl、ZnS:AgAu、ZnS:AgCl、ZnS:AuCl、ZnS:AgAuCl、及びSrGa2S4:Ceのうちの少なくとも1つを含んでいる請求項11に記載のシステム。
- 前記システムコンポーネントは、保護バリアをさらに備えている請求項11に記載のシステム。
- 前記保護バリアは、Y2O3、Sc2O3、Sc2F3、YF3、La2O3、CeO2、Eu2O3、DyO3、SiO2、MgO、Al2O3、ZnO、SnO2、及びIn2O3のうちの少なくとも1つを含んでいる請求項18に記載のシステム。
- 前記保護バリアは、透明である請求項18に記載のシステム。
- 前記プラズマ源は、プレート電極を備えている請求項11に記載のシステム。
- 前記プラズマ源は、ECR源を備えている請求項11に記載のシステム。
- 前記プラズマ源は、ヘリコン波源を備えている請求項11に記載のシステム。
- 前記プラズマ源は、表面波源を備えている請求項11に記載のシステム。
- プラズマ処理チャンバと、
プロセスガスからプラズマを生成するように構成されたプラズマ源と、
システムコンポーネント内に少なくとも部分的に包み込まれ、プラズマにさらされたときに、蛍光放射が可能なエミッタを含む前記システムコンポーネントと、
プロセス中に、前記プラズマ処理チャンバの前記システムコンポーネント内に少なくとも部分的に包み込まれた前記エミッタからの蛍光放射を、前記システムコンポーネントへの材料物質の付着の状態を判断するようにモニタリングし、さらに、前記システムコンポーネントに独自に関連づけられた前記蛍光放射の波長から前記システムコンポーネントを識別し、前記蛍光の強度レベルが閾値を超えているか否かを判断し、前記システムコンポーネントを交換する必要があるか否かを判断し、かつ前記判断に基づいて、プロセスを続行するか、あるいは前記プロセスを停止するかを判断するように構成されている光モニタリングシステムと、
プラズマ処理システムを制御するように構成されたコントローラとを具備するプラズマ処理システム。 - システムコンポーネントと、
前記システムコンポーネント内に少なくとも部分的に包み込まれ、プラズマプロセス中に蛍光放射が可能なエミッタとを具備し、
前記蛍光放射は、前記システムコンポーネントへの材料物質の付着の量を判断するようにモニタリングされ、前記モニタリングされた前記蛍光放射の強度レベルが閾値を超えているときに、前記システムコンポーネントのクリーニングまたは交換を必要とすると判断するモニタ可能なプラズマ処理システムに使用されるパーツ。 - 前記システムコンポーネントは、リング、シールド、電極、バッフル、及びライナのうちの少なくとも1つを備えている請求項26に記載のプラズマ処理システムに使用されるパーツ。
- 前記システムコンポーネントは、フォーカスリングである請求項26に記載のプラズマ処理システムに使用されるパーツ。
- 前記システムコンポーネントは、電極プレートである請求項26に記載のプラズマ処理システムに使用されるパーツ。
- 前記システムコンポーネントは、成膜シールドである請求項26に記載のプラズマ処理システムに使用されるパーツ。
- 前記システムコンポーネントは、シリコン、石英、アルミナ、カーボン、シリコンカーバイド、アルミニウム、及びステンレス鋼のうちの少なくとも1つから製造される請求項26に記載のプラズマ処理システムに使用されるパーツ。
- 前記エミッタは、前記システムコンポーネントによって完全に包み込まれている請求項26に記載のプラズマ処理システムに使用されるパーツ。
- 前記エミッタは、前記システムコンポーネントによって部分的に包み込まれている請求項26に記載のプラズマ処理システムに使用されるパーツ。
- 前記エミッタは、プラズマ中で生成された光によって励起された場合に、蛍光特性を有する少なくとも1つの物質を含んでいる請求項26に記載のプラズマ処理システムに使用されるパーツ。
- 前記エミッタは、プラズマ中で生成された励起ガス種によって励起された場合に、蛍光特性を有する少なくとも1つの物質を含んでいる請求項26に記載のプラズマ処理システムに使用されるパーツ。
- 前記エミッタからの前記蛍光放射は、前記消耗するシステムコンポーネントに独自に関連づけられ前記蛍光放射の波長から、前記消耗するシステムコンポーネントを識別することを可能にする請求項26に記載のプラズマ処理システムに使用されるパーツ。
- 前記エミッタは、リン光体物質を含んでいる請求項26に記載のプラズマ処理システムに使用されるパーツ。
- 前記リン光体物質は、Y2O3:Eu、Y2O2S:Eu、Y2O2S:Tb、Y2O2S:EuTb、ZnS:Cu、ZnS:Al、ZnS:CuAl、ZnS:Ag、ZnS:Au、ZnS:Cl、ZnS:AgAu、ZnS:AgCl、ZnS:AuCl、ZnS:AgAuCl及びSrGa2S4:Ceのうちの少なくとも1つを含んでいる請求項37に記載のプラズマ処理システムに使用されるパーツ。
- 前記システムコンポーネントは、保護バリアをさらに備えている請求項26に記載のプラズマ処理システムに使用されるパーツ。
- 前記保護バリアは、Y2O3、Sc2O3、Sc2F3、YF3、La2O3、CeO2、Eu2O3、DyO3、SiO2、MgO、Al2O3、ZnO、SnO2及びIn2O3のうちの少なくとも1つを含んでいる請求項39に記載のプラズマ処理システムに使用されるパーツ。
- 前記保護バリアは、プラズマ中で生成された光によって励起された場合に、蛍光特性を有する少なくとも1つの物質を含んでいる請求項39に記載のプラズマ処理システムに使用されるパーツ。
- 前記保護バリアは、プラズマ中で生成された励起ガス種によって励起された場合に、蛍光特性を有する少なくとも1つの物質を含んでいる請求項39に記載のプラズマ処理システムに使用されるパーツ。
- 前記保護バリアの厚さは、500μ以下である請求項39に記載のプラズマ処理システムに使用されるパーツ。
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US10/331,349 US6806949B2 (en) | 2002-12-31 | 2002-12-31 | Monitoring material buildup on system components by optical emission |
PCT/US2003/039109 WO2004061899A2 (en) | 2002-12-31 | 2003-12-24 | Monitoring material buildup on system components by optical emission |
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US20040125359A1 (en) | 2004-07-01 |
US6806949B2 (en) | 2004-10-19 |
JP2006512769A (ja) | 2006-04-13 |
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WO2004061899A3 (en) | 2004-12-16 |
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