JP4763235B2 - プラズマ処理のための装置並びに方法 - Google Patents
プラズマ処理のための装置並びに方法 Download PDFInfo
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- JP4763235B2 JP4763235B2 JP2003525699A JP2003525699A JP4763235B2 JP 4763235 B2 JP4763235 B2 JP 4763235B2 JP 2003525699 A JP2003525699 A JP 2003525699A JP 2003525699 A JP2003525699 A JP 2003525699A JP 4763235 B2 JP4763235 B2 JP 4763235B2
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- 239000007924 injection Substances 0.000 claims description 58
- 230000008569 process Effects 0.000 claims description 27
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- 210000002381 plasma Anatomy 0.000 description 33
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
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- 230000002000 scavenging effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31536901P | 2001-08-29 | 2001-08-29 | |
| US60/315,369 | 2001-08-29 | ||
| PCT/US2002/025955 WO2003021002A1 (en) | 2001-08-29 | 2002-08-29 | Apparatus and method for plasma processing |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005502198A JP2005502198A (ja) | 2005-01-20 |
| JP2005502198A5 JP2005502198A5 (enExample) | 2010-05-20 |
| JP4763235B2 true JP4763235B2 (ja) | 2011-08-31 |
Family
ID=23224081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003525699A Expired - Fee Related JP4763235B2 (ja) | 2001-08-29 | 2002-08-29 | プラズマ処理のための装置並びに方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7199328B2 (enExample) |
| JP (1) | JP4763235B2 (enExample) |
| CN (1) | CN100462475C (enExample) |
| WO (1) | WO2003021002A1 (enExample) |
Families Citing this family (118)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100899244B1 (ko) * | 2005-03-03 | 2009-05-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 프로세스 결과들의 제어되는 분포를 갖는 에칭을 위한 방법 |
| JP4506677B2 (ja) | 2005-03-11 | 2010-07-21 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
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| JP5192209B2 (ja) * | 2006-10-06 | 2013-05-08 | 東京エレクトロン株式会社 | プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体 |
| US20080230008A1 (en) * | 2007-03-21 | 2008-09-25 | Alexander Paterson | Plasma species and uniformity control through pulsed vhf operation |
| JP5514413B2 (ja) * | 2007-08-17 | 2014-06-04 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| US7879732B2 (en) * | 2007-12-18 | 2011-02-01 | Chartered Semiconductor Manufacturing Ltd. | Thin film etching method and semiconductor device fabrication using same |
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| JPH03263827A (ja) * | 1990-03-14 | 1991-11-25 | Yasuhiro Horiike | デジタルエツチング装置 |
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| GB8516537D0 (en) * | 1985-06-29 | 1985-07-31 | Standard Telephones Cables Ltd | Pulsed plasma apparatus |
| KR100324792B1 (ko) * | 1993-03-31 | 2002-06-20 | 히가시 데쓰로 | 플라즈마처리장치 |
| US5616208A (en) * | 1993-09-17 | 1997-04-01 | Tokyo Electron Limited | Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus |
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| TW335517B (en) * | 1996-03-01 | 1998-07-01 | Hitachi Ltd | Apparatus and method for processing plasma |
| KR0183844B1 (ko) * | 1996-04-30 | 1999-05-15 | 김광호 | 알에프 발생 장치 및 이를 이용한 펄스 플라즈마 형성 방법 |
| JP3122618B2 (ja) | 1996-08-23 | 2001-01-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US6200651B1 (en) * | 1997-06-30 | 2001-03-13 | Lam Research Corporation | Method of chemical vapor deposition in a vacuum plasma processor responsive to a pulsed microwave source |
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| WO2002075801A2 (en) * | 2000-11-07 | 2002-09-26 | Tokyo Electron Limited | Method of fabricating oxides with low defect densities |
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- 2002-08-29 WO PCT/US2002/025955 patent/WO2003021002A1/en not_active Ceased
- 2002-08-29 CN CNB028168224A patent/CN100462475C/zh not_active Expired - Lifetime
- 2002-08-29 JP JP2003525699A patent/JP4763235B2/ja not_active Expired - Fee Related
- 2002-08-29 US US10/487,232 patent/US7199328B2/en not_active Expired - Lifetime
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03263827A (ja) * | 1990-03-14 | 1991-11-25 | Yasuhiro Horiike | デジタルエツチング装置 |
Also Published As
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| CN1549872A (zh) | 2004-11-24 |
| CN100462475C (zh) | 2009-02-18 |
| US7199328B2 (en) | 2007-04-03 |
| US20040195216A1 (en) | 2004-10-07 |
| WO2003021002A1 (en) | 2003-03-13 |
| JP2005502198A (ja) | 2005-01-20 |
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