JP4759582B2 - 半導体デバイスの製造方法及び半導体デバイス - Google Patents
半導体デバイスの製造方法及び半導体デバイス Download PDFInfo
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Description
11 基板
12 第1半導体チップ
14 ボンディングパッド
16 Auワイヤ
17a、17b 第2半導体チップ
19 アンダーフィル樹脂層
20 突起
21 封止樹脂層
Claims (7)
- 配線面を有する第1半導体チップと、配線面を有する、前記第1半導体チップよりも小さい複数の第2半導体チップと、を用意する準備工程と、
前記第2半導体チップの複数を前記第1半導体チップの配線面に沿って、且つ、互いに間隙をおいて並置せしめる一方、前記第1及び第2半導体チップの配線面同士をフリップチップ接合する接合工程と、
当該フリップチップ接合された第2半導体チップ同士及び前記第1と第2半導体チップとの間隙内に充填流体を注入する充填流体注入工程と、
前記充填流体を硬化する硬化工程と、を含む半導体デバイスの製造方法あって、
前記充填流体注入工程においては、前記第2半導体チップ同士の間隙よりも小さい吐出口径の注入口を前記第2半導体チップ同士の間隙に沿って移動せしめつつ、前記注入口を介して前記第2半導体チップ同士の間隙内に前記充填流体を注入して、前記充填流体を前記第1と前記第2半導体チップとの間隙内にも充填せしめることを特徴とする半導体デバイスの製造方法。 - 前記充填流体注入工程においては、前記注入口の移動速度を前記充填流体の粘度及び前記注入口の前記第2半導体チップ同士の間隙に対する相対的な位置の少なくとも一方に応じて変化せしめることを特徴とする請求項1に記載の半導体デバイスの製造方法。
- 前記充填流体注入工程においては、前記第1半導体チップに対する前記注入口の高さを前記充填流体の粘度に応じて調整することを特徴とする請求項1又は2に記載の半導体デバイスの製造方法。
- 前記充填流体注入工程においては、前記充填流体の注入量を前記充填流体の粘度及び前記注入口の前記第2半導体チップ同士の間隙に対する相対的な位置の少なくとも一方に応じて調整することを特徴とする請求項1乃至3のいずれか1に記載の半導体デバイスの製造方法。
- 前記接合工程においては、前記第2半導体チップ同士の間隔を0.6mmから0.9mmとして、前記第1半導体チップ上に前記第2半導体チップを接合することを特徴とする請求項1乃至4のいずれか1に記載の半導体デバイスの製造方法。
- 前記接合工程においては、前記第1半導体チップの配線面の外周近傍に設けられたボンディングパッドから前記第2半導体チップの側面までの距離を0.5mm以下として、前記第1半導体チップ上に前記第2半導体チップを接合することを特徴とする請求項1乃至5のいずれか1に記載の半導体デバイスの製造方法。
- 前記充填流体はエポキシ樹脂であることを特徴とする請求項1乃至6のいずれか1に記載の半導体デバイスの製造方法。
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JP2008034342A JP4759582B2 (ja) | 2008-02-15 | 2008-02-15 | 半導体デバイスの製造方法及び半導体デバイス |
US12/320,316 US8435839B2 (en) | 2008-02-15 | 2009-01-23 | Method of manufacturing semiconductor device and the semiconductor device |
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US10475759B2 (en) * | 2011-10-11 | 2019-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit structure having dies with connectors of different sizes |
CN104247012B (zh) * | 2012-10-01 | 2017-08-25 | 富士电机株式会社 | 半导体装置及其制造方法 |
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JPH0555633A (ja) * | 1991-08-29 | 1993-03-05 | Sharp Corp | 光学装置およびその製造方法 |
WO1998040915A1 (fr) * | 1997-03-10 | 1998-09-17 | Seiko Epson Corporation | Composant electronique et dispositif a semi-conducteurs, procede de fabrication correspondant, carte a circuit imprime ainsi equipee, et equipement electronique comportant cette carte a circuit imprime |
JP2001110845A (ja) * | 1999-10-04 | 2001-04-20 | Mitsubishi Electric Corp | フリップチップの実装構造 |
JP2001127245A (ja) * | 1999-10-26 | 2001-05-11 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP3651362B2 (ja) * | 2000-05-24 | 2005-05-25 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JP2002026236A (ja) * | 2000-07-05 | 2002-01-25 | Canon Inc | 半導体素子の実装構造およびその実装方法 |
US20020081771A1 (en) * | 2000-12-22 | 2002-06-27 | Yi-Chuan Ding | Flip chip process |
JP3929250B2 (ja) * | 2001-03-08 | 2007-06-13 | 株式会社ルネサステクノロジ | 半導体装置 |
JP4757398B2 (ja) * | 2001-04-24 | 2011-08-24 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
KR100378285B1 (en) * | 2001-06-15 | 2003-03-29 | Dongbu Electronics Co Ltd | Semiconductor package and fabricating method thereof |
JP2003258189A (ja) * | 2002-03-01 | 2003-09-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2004055609A (ja) * | 2002-07-16 | 2004-02-19 | Apic Yamada Corp | 樹脂封止方法 |
TWI236747B (en) * | 2004-03-12 | 2005-07-21 | Advanced Semiconductor Eng | Manufacturing process and structure for a flip-chip package |
JP2006203470A (ja) * | 2005-01-19 | 2006-08-03 | Kyocera Corp | 高周波モジュール及び無線通信機器 |
JP4498991B2 (ja) * | 2005-07-15 | 2010-07-07 | 新光電気工業株式会社 | 半導体装置及び電子装置 |
JP2007029424A (ja) * | 2005-07-27 | 2007-02-08 | Hitoshi Iwai | ブローブラシ |
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