JP4758002B2 - 炭化フッ素ガスケミストリーを用いた二酸化珪素をエッチングする方法 - Google Patents

炭化フッ素ガスケミストリーを用いた二酸化珪素をエッチングする方法 Download PDF

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JP4758002B2
JP4758002B2 JP2000547650A JP2000547650A JP4758002B2 JP 4758002 B2 JP4758002 B2 JP 4758002B2 JP 2000547650 A JP2000547650 A JP 2000547650A JP 2000547650 A JP2000547650 A JP 2000547650A JP 4758002 B2 JP4758002 B2 JP 4758002B2
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Japan
Prior art keywords
etching
silicon oxide
layer
oxygen
opening
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Expired - Fee Related
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JP2000547650A
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Japanese (ja)
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JP2002514012A (ja
JP2002514012A5 (enExample
Inventor
キーヴァン カージュノーリ，
トーマス， ディー． グエン，
ジョージ ミューラー，
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000547650A 1998-05-05 1999-04-22 炭化フッ素ガスケミストリーを用いた二酸化珪素をエッチングする方法 Expired - Fee Related JP4758002B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/071,960 1998-05-05
US09/071,960 US6117786A (en) 1998-05-05 1998-05-05 Method for etching silicon dioxide using fluorocarbon gas chemistry
PCT/US1999/008798 WO1999057757A1 (en) 1998-05-05 1999-04-22 Method for etching silicon dioxide using fluorocarbon gas chemistry

Publications (3)

Publication Number Publication Date
JP2002514012A JP2002514012A (ja) 2002-05-14
JP2002514012A5 JP2002514012A5 (enExample) 2006-06-15
JP4758002B2 true JP4758002B2 (ja) 2011-08-24

Family

ID=22104686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000547650A Expired - Fee Related JP4758002B2 (ja) 1998-05-05 1999-04-22 炭化フッ素ガスケミストリーを用いた二酸化珪素をエッチングする方法

Country Status (6)

Country Link
US (1) US6117786A (enExample)
EP (1) EP1078395A1 (enExample)
JP (1) JP4758002B2 (enExample)
KR (1) KR100628932B1 (enExample)
TW (1) TWI222136B (enExample)
WO (1) WO1999057757A1 (enExample)

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US6531067B1 (en) * 1998-12-28 2003-03-11 Asahi Kasei Microsystems Co., Ltd. Method for forming contact hole
US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
JP4173307B2 (ja) * 1999-06-24 2008-10-29 株式会社ルネサステクノロジ 半導体集積回路の製造方法
US6635335B1 (en) 1999-06-29 2003-10-21 Micron Technology, Inc. Etching methods and apparatus and substrate assemblies produced therewith
DE19937994C2 (de) * 1999-08-11 2003-12-11 Infineon Technologies Ag Ätzprozeß für eine Dual Damascene Strukturierung einer Isolierschicht auf einer Halbleiterstruktur
US20050158666A1 (en) * 1999-10-15 2005-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral etch inhibited multiple etch method for etching material etchable with oxygen containing plasma
US6486069B1 (en) * 1999-12-03 2002-11-26 Tegal Corporation Cobalt silicide etch process and apparatus
US6547979B1 (en) * 2000-08-31 2003-04-15 Micron Technology, Inc. Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers
JP2002110647A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路装置の製造方法
DE10053780A1 (de) * 2000-10-30 2002-05-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Siliziumoxid-Schicht
US6554004B1 (en) * 2000-11-07 2003-04-29 Motorola, Inc. Method for removing etch residue resulting from a process for forming a via
US6686296B1 (en) * 2000-11-28 2004-02-03 International Business Machines Corp. Nitrogen-based highly polymerizing plasma process for etching of organic materials in semiconductor manufacturing
US7311852B2 (en) * 2001-03-30 2007-12-25 Lam Research Corporation Method of plasma etching low-k dielectric materials
US6746961B2 (en) 2001-06-19 2004-06-08 Lam Research Corporation Plasma etching of dielectric layer with etch profile control
US7129178B1 (en) * 2002-02-13 2006-10-31 Cypress Semiconductor Corp. Reducing defect formation within an etched semiconductor topography
JP4153708B2 (ja) * 2002-03-12 2008-09-24 東京エレクトロン株式会社 エッチング方法
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
US20040171260A1 (en) * 2002-06-14 2004-09-02 Lam Research Corporation Line edge roughness control
US6706640B1 (en) * 2002-11-12 2004-03-16 Taiwan Semiconductor Manufacturing Co., Ltd Metal silicide etch resistant plasma etch method
DE10318568A1 (de) * 2003-04-15 2004-11-25 Technische Universität Dresden Siliziumsubstrat mit positiven Ätzprofilen mit definiertem Böschungswinkel und Verfahren zur Herstellung
JP4538209B2 (ja) * 2003-08-28 2010-09-08 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
US7078337B2 (en) * 2003-09-30 2006-07-18 Agere Systems Inc. Selective isotropic etch for titanium-based materials
US7700492B2 (en) * 2005-06-22 2010-04-20 Tokyo Electron Limited Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program
JP2007251034A (ja) * 2006-03-17 2007-09-27 Hitachi High-Technologies Corp プラズマ処理方法
US7718542B2 (en) * 2006-08-25 2010-05-18 Lam Research Corporation Low-k damage avoidance during bevel etch processing
US7517804B2 (en) * 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
US8507385B2 (en) * 2008-05-05 2013-08-13 Shanghai Lexvu Opto Microelectronics Technology Co., Ltd. Method for processing a thin film micro device on a substrate
CN102001616A (zh) * 2009-08-31 2011-04-06 上海丽恒光微电子科技有限公司 装配和封装微型机电系统装置的方法
JP6096470B2 (ja) * 2012-10-29 2017-03-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN103824767B (zh) * 2012-11-16 2017-05-17 中微半导体设备(上海)有限公司 一种深硅通孔的刻蚀方法
US9165785B2 (en) * 2013-03-29 2015-10-20 Tokyo Electron Limited Reducing bowing bias in etching an oxide layer
JP7403314B2 (ja) * 2019-12-26 2023-12-22 東京エレクトロン株式会社 エッチング方法及びエッチング装置
KR20230121424A (ko) 2022-02-11 2023-08-18 삼성전자주식회사 반도체 소자

Citations (5)

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Publication number Priority date Publication date Assignee Title
JPH08130211A (ja) * 1994-10-31 1996-05-21 Tokyo Electron Ltd エッチング方法
WO1996036984A1 (en) * 1995-05-19 1996-11-21 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
JPH1041274A (ja) * 1996-04-29 1998-02-13 Applied Materials Inc 誘電層のエッチング方法
JPH1098021A (ja) * 1996-09-19 1998-04-14 Seiko Epson Corp 半導体装置の製造方法
JPH11186229A (ja) * 1997-12-18 1999-07-09 Toshiba Corp ドライエッチング方法及び半導体装置の製造方法

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US5254213A (en) * 1989-10-25 1993-10-19 Matsushita Electric Industrial Co., Ltd. Method of forming contact windows
US5013400A (en) * 1990-01-30 1991-05-07 General Signal Corporation Dry etch process for forming champagne profiles, and dry etch apparatus
US5021121A (en) * 1990-02-16 1991-06-04 Applied Materials, Inc. Process for RIE etching silicon dioxide
US5013398A (en) * 1990-05-29 1991-05-07 Micron Technology, Inc. Anisotropic etch method for a sandwich structure
US5022958A (en) * 1990-06-27 1991-06-11 At&T Bell Laboratories Method of etching for integrated circuits with planarized dielectric
JP3146561B2 (ja) * 1991-06-24 2001-03-19 株式会社デンソー 半導体装置の製造方法
US5269879A (en) * 1991-10-16 1993-12-14 Lam Research Corporation Method of etching vias without sputtering of underlying electrically conductive layer
KR100264445B1 (ko) * 1993-10-04 2000-11-01 히가시 데쓰로 플라즈마처리장치
US5431778A (en) * 1994-02-03 1995-07-11 Motorola, Inc. Dry etch method using non-halocarbon source gases
TW320749B (enExample) * 1994-09-22 1997-11-21 Tokyo Electron Co Ltd
US5736457A (en) * 1994-12-09 1998-04-07 Sematech Method of making a damascene metallization
JP3778299B2 (ja) * 1995-02-07 2006-05-24 東京エレクトロン株式会社 プラズマエッチング方法
US5626716A (en) * 1995-09-29 1997-05-06 Lam Research Corporation Plasma etching of semiconductors
US5780338A (en) * 1997-04-11 1998-07-14 Vanguard International Semiconductor Corporation Method for manufacturing crown-shaped capacitors for dynamic random access memory integrated circuits

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08130211A (ja) * 1994-10-31 1996-05-21 Tokyo Electron Ltd エッチング方法
WO1996036984A1 (en) * 1995-05-19 1996-11-21 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
JPH1041274A (ja) * 1996-04-29 1998-02-13 Applied Materials Inc 誘電層のエッチング方法
JPH1098021A (ja) * 1996-09-19 1998-04-14 Seiko Epson Corp 半導体装置の製造方法
JPH11186229A (ja) * 1997-12-18 1999-07-09 Toshiba Corp ドライエッチング方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
KR100628932B1 (ko) 2006-09-27
US6117786A (en) 2000-09-12
JP2002514012A (ja) 2002-05-14
TWI222136B (en) 2004-10-11
KR20010043324A (ko) 2001-05-25
EP1078395A1 (en) 2001-02-28
WO1999057757A1 (en) 1999-11-11

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