KR100628932B1 - 불화탄소 가스를 사용하는 이산화 실리콘막의 에칭방법 - Google Patents

불화탄소 가스를 사용하는 이산화 실리콘막의 에칭방법 Download PDF

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Publication number
KR100628932B1
KR100628932B1 KR1020007012293A KR20007012293A KR100628932B1 KR 100628932 B1 KR100628932 B1 KR 100628932B1 KR 1020007012293 A KR1020007012293 A KR 1020007012293A KR 20007012293 A KR20007012293 A KR 20007012293A KR 100628932 B1 KR100628932 B1 KR 100628932B1
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South Korea
Prior art keywords
etching
opening
silicon oxide
gas
oxygen
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Expired - Fee Related
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KR1020007012293A
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English (en)
Korean (ko)
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KR20010043324A (ko
Inventor
카에노우리키반
뉴옌토마스디.
뮤엘러조지
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램 리서치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020007012293A 1998-05-05 1999-04-22 불화탄소 가스를 사용하는 이산화 실리콘막의 에칭방법 Expired - Fee Related KR100628932B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/071,960 1998-05-05
US09/071,960 US6117786A (en) 1998-05-05 1998-05-05 Method for etching silicon dioxide using fluorocarbon gas chemistry

Publications (2)

Publication Number Publication Date
KR20010043324A KR20010043324A (ko) 2001-05-25
KR100628932B1 true KR100628932B1 (ko) 2006-09-27

Family

ID=22104686

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007012293A Expired - Fee Related KR100628932B1 (ko) 1998-05-05 1999-04-22 불화탄소 가스를 사용하는 이산화 실리콘막의 에칭방법

Country Status (6)

Country Link
US (1) US6117786A (enExample)
EP (1) EP1078395A1 (enExample)
JP (1) JP4758002B2 (enExample)
KR (1) KR100628932B1 (enExample)
TW (1) TWI222136B (enExample)
WO (1) WO1999057757A1 (enExample)

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US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
JP4173307B2 (ja) * 1999-06-24 2008-10-29 株式会社ルネサステクノロジ 半導体集積回路の製造方法
US6635335B1 (en) 1999-06-29 2003-10-21 Micron Technology, Inc. Etching methods and apparatus and substrate assemblies produced therewith
DE19937994C2 (de) * 1999-08-11 2003-12-11 Infineon Technologies Ag Ätzprozeß für eine Dual Damascene Strukturierung einer Isolierschicht auf einer Halbleiterstruktur
US20050158666A1 (en) * 1999-10-15 2005-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral etch inhibited multiple etch method for etching material etchable with oxygen containing plasma
US6486069B1 (en) * 1999-12-03 2002-11-26 Tegal Corporation Cobalt silicide etch process and apparatus
US6547979B1 (en) * 2000-08-31 2003-04-15 Micron Technology, Inc. Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers
JP2002110647A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路装置の製造方法
DE10053780A1 (de) * 2000-10-30 2002-05-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Siliziumoxid-Schicht
US6554004B1 (en) * 2000-11-07 2003-04-29 Motorola, Inc. Method for removing etch residue resulting from a process for forming a via
US6686296B1 (en) * 2000-11-28 2004-02-03 International Business Machines Corp. Nitrogen-based highly polymerizing plasma process for etching of organic materials in semiconductor manufacturing
US7311852B2 (en) * 2001-03-30 2007-12-25 Lam Research Corporation Method of plasma etching low-k dielectric materials
US6746961B2 (en) 2001-06-19 2004-06-08 Lam Research Corporation Plasma etching of dielectric layer with etch profile control
US7129178B1 (en) * 2002-02-13 2006-10-31 Cypress Semiconductor Corp. Reducing defect formation within an etched semiconductor topography
JP4153708B2 (ja) * 2002-03-12 2008-09-24 東京エレクトロン株式会社 エッチング方法
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
US20040171260A1 (en) * 2002-06-14 2004-09-02 Lam Research Corporation Line edge roughness control
US6706640B1 (en) * 2002-11-12 2004-03-16 Taiwan Semiconductor Manufacturing Co., Ltd Metal silicide etch resistant plasma etch method
DE10318568A1 (de) * 2003-04-15 2004-11-25 Technische Universität Dresden Siliziumsubstrat mit positiven Ätzprofilen mit definiertem Böschungswinkel und Verfahren zur Herstellung
JP4538209B2 (ja) * 2003-08-28 2010-09-08 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
US7078337B2 (en) * 2003-09-30 2006-07-18 Agere Systems Inc. Selective isotropic etch for titanium-based materials
US7700492B2 (en) * 2005-06-22 2010-04-20 Tokyo Electron Limited Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program
JP2007251034A (ja) * 2006-03-17 2007-09-27 Hitachi High-Technologies Corp プラズマ処理方法
US7718542B2 (en) * 2006-08-25 2010-05-18 Lam Research Corporation Low-k damage avoidance during bevel etch processing
US7517804B2 (en) * 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
US8507385B2 (en) * 2008-05-05 2013-08-13 Shanghai Lexvu Opto Microelectronics Technology Co., Ltd. Method for processing a thin film micro device on a substrate
CN102001616A (zh) * 2009-08-31 2011-04-06 上海丽恒光微电子科技有限公司 装配和封装微型机电系统装置的方法
JP6096470B2 (ja) * 2012-10-29 2017-03-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN103824767B (zh) * 2012-11-16 2017-05-17 中微半导体设备(上海)有限公司 一种深硅通孔的刻蚀方法
US9165785B2 (en) * 2013-03-29 2015-10-20 Tokyo Electron Limited Reducing bowing bias in etching an oxide layer
JP7403314B2 (ja) * 2019-12-26 2023-12-22 東京エレクトロン株式会社 エッチング方法及びエッチング装置
KR20230121424A (ko) 2022-02-11 2023-08-18 삼성전자주식회사 반도체 소자

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US5254213A (en) * 1989-10-25 1993-10-19 Matsushita Electric Industrial Co., Ltd. Method of forming contact windows
US5013400A (en) * 1990-01-30 1991-05-07 General Signal Corporation Dry etch process for forming champagne profiles, and dry etch apparatus
US5021121A (en) * 1990-02-16 1991-06-04 Applied Materials, Inc. Process for RIE etching silicon dioxide
US5013398A (en) * 1990-05-29 1991-05-07 Micron Technology, Inc. Anisotropic etch method for a sandwich structure
US5022958A (en) * 1990-06-27 1991-06-11 At&T Bell Laboratories Method of etching for integrated circuits with planarized dielectric
JP3146561B2 (ja) * 1991-06-24 2001-03-19 株式会社デンソー 半導体装置の製造方法
US5269879A (en) * 1991-10-16 1993-12-14 Lam Research Corporation Method of etching vias without sputtering of underlying electrically conductive layer
KR100264445B1 (ko) * 1993-10-04 2000-11-01 히가시 데쓰로 플라즈마처리장치
US5431778A (en) * 1994-02-03 1995-07-11 Motorola, Inc. Dry etch method using non-halocarbon source gases
TW320749B (enExample) * 1994-09-22 1997-11-21 Tokyo Electron Co Ltd
JPH08130211A (ja) * 1994-10-31 1996-05-21 Tokyo Electron Ltd エッチング方法
US5736457A (en) * 1994-12-09 1998-04-07 Sematech Method of making a damascene metallization
JP3778299B2 (ja) * 1995-02-07 2006-05-24 東京エレクトロン株式会社 プラズマエッチング方法
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US5626716A (en) * 1995-09-29 1997-05-06 Lam Research Corporation Plasma etching of semiconductors
US5843847A (en) * 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
JPH1098021A (ja) * 1996-09-19 1998-04-14 Seiko Epson Corp 半導体装置の製造方法
US5780338A (en) * 1997-04-11 1998-07-14 Vanguard International Semiconductor Corporation Method for manufacturing crown-shaped capacitors for dynamic random access memory integrated circuits
JPH11186229A (ja) * 1997-12-18 1999-07-09 Toshiba Corp ドライエッチング方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
US6117786A (en) 2000-09-12
JP2002514012A (ja) 2002-05-14
TWI222136B (en) 2004-10-11
JP4758002B2 (ja) 2011-08-24
KR20010043324A (ko) 2001-05-25
EP1078395A1 (en) 2001-02-28
WO1999057757A1 (en) 1999-11-11

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