JP2002514012A5 - - Google Patents
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- Publication number
- JP2002514012A5 JP2002514012A5 JP2000547650A JP2000547650A JP2002514012A5 JP 2002514012 A5 JP2002514012 A5 JP 2002514012A5 JP 2000547650 A JP2000547650 A JP 2000547650A JP 2000547650 A JP2000547650 A JP 2000547650A JP 2002514012 A5 JP2002514012 A5 JP 2002514012A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/071,960 | 1998-05-05 | ||
| US09/071,960 US6117786A (en) | 1998-05-05 | 1998-05-05 | Method for etching silicon dioxide using fluorocarbon gas chemistry |
| PCT/US1999/008798 WO1999057757A1 (en) | 1998-05-05 | 1999-04-22 | Method for etching silicon dioxide using fluorocarbon gas chemistry |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002514012A JP2002514012A (ja) | 2002-05-14 |
| JP2002514012A5 true JP2002514012A5 (enExample) | 2006-06-15 |
| JP4758002B2 JP4758002B2 (ja) | 2011-08-24 |
Family
ID=22104686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000547650A Expired - Fee Related JP4758002B2 (ja) | 1998-05-05 | 1999-04-22 | 炭化フッ素ガスケミストリーを用いた二酸化珪素をエッチングする方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6117786A (enExample) |
| EP (1) | EP1078395A1 (enExample) |
| JP (1) | JP4758002B2 (enExample) |
| KR (1) | KR100628932B1 (enExample) |
| TW (1) | TWI222136B (enExample) |
| WO (1) | WO1999057757A1 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6531067B1 (en) * | 1998-12-28 | 2003-03-11 | Asahi Kasei Microsystems Co., Ltd. | Method for forming contact hole |
| US6797189B2 (en) | 1999-03-25 | 2004-09-28 | Hoiman (Raymond) Hung | Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon |
| JP4173307B2 (ja) * | 1999-06-24 | 2008-10-29 | 株式会社ルネサステクノロジ | 半導体集積回路の製造方法 |
| US6635335B1 (en) | 1999-06-29 | 2003-10-21 | Micron Technology, Inc. | Etching methods and apparatus and substrate assemblies produced therewith |
| DE19937994C2 (de) * | 1999-08-11 | 2003-12-11 | Infineon Technologies Ag | Ätzprozeß für eine Dual Damascene Strukturierung einer Isolierschicht auf einer Halbleiterstruktur |
| US20050158666A1 (en) * | 1999-10-15 | 2005-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lateral etch inhibited multiple etch method for etching material etchable with oxygen containing plasma |
| US6486069B1 (en) * | 1999-12-03 | 2002-11-26 | Tegal Corporation | Cobalt silicide etch process and apparatus |
| US6547979B1 (en) * | 2000-08-31 | 2003-04-15 | Micron Technology, Inc. | Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers |
| JP2002110647A (ja) * | 2000-09-29 | 2002-04-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| DE10053780A1 (de) * | 2000-10-30 | 2002-05-16 | Infineon Technologies Ag | Verfahren zur Strukturierung einer Siliziumoxid-Schicht |
| US6554004B1 (en) * | 2000-11-07 | 2003-04-29 | Motorola, Inc. | Method for removing etch residue resulting from a process for forming a via |
| US6686296B1 (en) * | 2000-11-28 | 2004-02-03 | International Business Machines Corp. | Nitrogen-based highly polymerizing plasma process for etching of organic materials in semiconductor manufacturing |
| US7311852B2 (en) * | 2001-03-30 | 2007-12-25 | Lam Research Corporation | Method of plasma etching low-k dielectric materials |
| US6746961B2 (en) | 2001-06-19 | 2004-06-08 | Lam Research Corporation | Plasma etching of dielectric layer with etch profile control |
| US7129178B1 (en) * | 2002-02-13 | 2006-10-31 | Cypress Semiconductor Corp. | Reducing defect formation within an etched semiconductor topography |
| JP4153708B2 (ja) * | 2002-03-12 | 2008-09-24 | 東京エレクトロン株式会社 | エッチング方法 |
| US7547635B2 (en) * | 2002-06-14 | 2009-06-16 | Lam Research Corporation | Process for etching dielectric films with improved resist and/or etch profile characteristics |
| US20040171260A1 (en) * | 2002-06-14 | 2004-09-02 | Lam Research Corporation | Line edge roughness control |
| US6706640B1 (en) * | 2002-11-12 | 2004-03-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Metal silicide etch resistant plasma etch method |
| DE10318568A1 (de) * | 2003-04-15 | 2004-11-25 | Technische Universität Dresden | Siliziumsubstrat mit positiven Ätzprofilen mit definiertem Böschungswinkel und Verfahren zur Herstellung |
| JP4538209B2 (ja) * | 2003-08-28 | 2010-09-08 | 株式会社日立ハイテクノロジーズ | 半導体装置の製造方法 |
| US7078337B2 (en) * | 2003-09-30 | 2006-07-18 | Agere Systems Inc. | Selective isotropic etch for titanium-based materials |
| US7700492B2 (en) * | 2005-06-22 | 2010-04-20 | Tokyo Electron Limited | Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program |
| JP2007251034A (ja) * | 2006-03-17 | 2007-09-27 | Hitachi High-Technologies Corp | プラズマ処理方法 |
| US7718542B2 (en) * | 2006-08-25 | 2010-05-18 | Lam Research Corporation | Low-k damage avoidance during bevel etch processing |
| US7517804B2 (en) * | 2006-08-31 | 2009-04-14 | Micron Technologies, Inc. | Selective etch chemistries for forming high aspect ratio features and associated structures |
| US8507385B2 (en) * | 2008-05-05 | 2013-08-13 | Shanghai Lexvu Opto Microelectronics Technology Co., Ltd. | Method for processing a thin film micro device on a substrate |
| CN102001616A (zh) * | 2009-08-31 | 2011-04-06 | 上海丽恒光微电子科技有限公司 | 装配和封装微型机电系统装置的方法 |
| JP6096470B2 (ja) * | 2012-10-29 | 2017-03-15 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| CN103824767B (zh) * | 2012-11-16 | 2017-05-17 | 中微半导体设备(上海)有限公司 | 一种深硅通孔的刻蚀方法 |
| US9165785B2 (en) * | 2013-03-29 | 2015-10-20 | Tokyo Electron Limited | Reducing bowing bias in etching an oxide layer |
| JP7403314B2 (ja) * | 2019-12-26 | 2023-12-22 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| KR20230121424A (ko) | 2022-02-11 | 2023-08-18 | 삼성전자주식회사 | 반도체 소자 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5254213A (en) * | 1989-10-25 | 1993-10-19 | Matsushita Electric Industrial Co., Ltd. | Method of forming contact windows |
| US5013400A (en) * | 1990-01-30 | 1991-05-07 | General Signal Corporation | Dry etch process for forming champagne profiles, and dry etch apparatus |
| US5021121A (en) * | 1990-02-16 | 1991-06-04 | Applied Materials, Inc. | Process for RIE etching silicon dioxide |
| US5013398A (en) * | 1990-05-29 | 1991-05-07 | Micron Technology, Inc. | Anisotropic etch method for a sandwich structure |
| US5022958A (en) * | 1990-06-27 | 1991-06-11 | At&T Bell Laboratories | Method of etching for integrated circuits with planarized dielectric |
| JP3146561B2 (ja) * | 1991-06-24 | 2001-03-19 | 株式会社デンソー | 半導体装置の製造方法 |
| US5269879A (en) * | 1991-10-16 | 1993-12-14 | Lam Research Corporation | Method of etching vias without sputtering of underlying electrically conductive layer |
| KR100264445B1 (ko) * | 1993-10-04 | 2000-11-01 | 히가시 데쓰로 | 플라즈마처리장치 |
| US5431778A (en) * | 1994-02-03 | 1995-07-11 | Motorola, Inc. | Dry etch method using non-halocarbon source gases |
| TW320749B (enExample) * | 1994-09-22 | 1997-11-21 | Tokyo Electron Co Ltd | |
| JPH08130211A (ja) * | 1994-10-31 | 1996-05-21 | Tokyo Electron Ltd | エッチング方法 |
| US5736457A (en) * | 1994-12-09 | 1998-04-07 | Sematech | Method of making a damascene metallization |
| JP3778299B2 (ja) * | 1995-02-07 | 2006-05-24 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| US5569356A (en) * | 1995-05-19 | 1996-10-29 | Lam Research Corporation | Electrode clamping assembly and method for assembly and use thereof |
| US5626716A (en) * | 1995-09-29 | 1997-05-06 | Lam Research Corporation | Plasma etching of semiconductors |
| US5843847A (en) * | 1996-04-29 | 1998-12-01 | Applied Materials, Inc. | Method for etching dielectric layers with high selectivity and low microloading |
| JPH1098021A (ja) * | 1996-09-19 | 1998-04-14 | Seiko Epson Corp | 半導体装置の製造方法 |
| US5780338A (en) * | 1997-04-11 | 1998-07-14 | Vanguard International Semiconductor Corporation | Method for manufacturing crown-shaped capacitors for dynamic random access memory integrated circuits |
| JPH11186229A (ja) * | 1997-12-18 | 1999-07-09 | Toshiba Corp | ドライエッチング方法及び半導体装置の製造方法 |
-
1998
- 1998-05-05 US US09/071,960 patent/US6117786A/en not_active Expired - Lifetime
-
1999
- 1999-04-22 EP EP99919961A patent/EP1078395A1/en not_active Withdrawn
- 1999-04-22 JP JP2000547650A patent/JP4758002B2/ja not_active Expired - Fee Related
- 1999-04-22 WO PCT/US1999/008798 patent/WO1999057757A1/en not_active Ceased
- 1999-04-22 KR KR1020007012293A patent/KR100628932B1/ko not_active Expired - Fee Related
- 1999-05-05 TW TW088107265A patent/TWI222136B/zh active