JP4753809B2 - 電解コンデンサの製造方法 - Google Patents
電解コンデンサの製造方法 Download PDFInfo
- Publication number
- JP4753809B2 JP4753809B2 JP2006205359A JP2006205359A JP4753809B2 JP 4753809 B2 JP4753809 B2 JP 4753809B2 JP 2006205359 A JP2006205359 A JP 2006205359A JP 2006205359 A JP2006205359 A JP 2006205359A JP 4753809 B2 JP4753809 B2 JP 4753809B2
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- Prior art keywords
- dielectric layer
- anode
- electrolytic capacitor
- solid electrolytic
- concentration
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- 239000003990 capacitor Substances 0.000 title claims description 91
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000008151 electrolyte solution Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 20
- 239000003792 electrolyte Substances 0.000 claims description 15
- LXPCOISGJFXEJE-UHFFFAOYSA-N oxifentorex Chemical compound C=1C=CC=CC=1C[N+](C)([O-])C(C)CC1=CC=CC=C1 LXPCOISGJFXEJE-UHFFFAOYSA-N 0.000 claims description 15
- 238000007743 anodising Methods 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 6
- ZLSPYXQZLJFBBV-UHFFFAOYSA-H F[Zr](F)(F)(F)(F)F.N Chemical compound F[Zr](F)(F)(F)(F)F.N ZLSPYXQZLJFBBV-UHFFFAOYSA-H 0.000 claims 1
- 239000007787 solid Substances 0.000 description 64
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 30
- 229910052731 fluorine Inorganic materials 0.000 description 30
- 239000011737 fluorine Substances 0.000 description 30
- 239000007864 aqueous solution Substances 0.000 description 29
- 238000002474 experimental method Methods 0.000 description 18
- 229910052758 niobium Inorganic materials 0.000 description 16
- 239000010955 niobium Substances 0.000 description 16
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 8
- 229910052732 germanium Inorganic materials 0.000 description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000002048 anodisation reaction Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 229920000128 polypyrrole Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical group [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000007784 solid electrolyte Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PEQFPKIXNHTCSJ-UHFFFAOYSA-N alumane;niobium Chemical compound [AlH3].[Nb] PEQFPKIXNHTCSJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 150000004761 hexafluorosilicates Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 230000031070 response to heat Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
実験1では、ヘキサフルオロケイ酸アンモニウム水溶液を用いて陽極の陽極酸化を行うことにより誘電体層を形成した。図1は、実験1で作製した固体電解コンデンサの断面説明図である。図1を参照して、実験1で作製した固体電解コンデンサの製造方法について説明する。
次に、上記のように作製した各固体電解コンデンサA1〜A13、B1、X1およびY1をリフローした場合における漏れ電流を測定した。
実験2では、ヘキサフルオロゲルマニウム酸アンモニウム水溶液を用いて陽極酸化を行い、誘電体層を形成した。図5は、実験2で作製した電解コンデンサの概略断面図である。図5を参照して、実験2で作製した電解コンデンサの製造方法について説明する。
次に、上記のように作製した各電解コンデンサC2〜C13およびZ1の漏れ電流および静電容量を測定した。
実験3では、ヘキサフルオロゲルマニウム酸アンモニウム水溶液およびヘキサフルオロジルコニウム酸アンモニウム水溶液を用いて陽極の陽極酸化を行うことにより誘電体層を形成し、さらに実験1と同様の構成を有する固体電解コンデンサを作製した。
次に、上記のように作製した各固体電解コンデンサD1およびD2をリフローした場合における漏れ電流を測定した。
2 誘電体層
3 電解質層
4 陰極
5 陽極リード
6 陰極リード
7 樹脂層
10 リード線
41 グラファイト層
42 銀ペースト層
Claims (2)
- 弁作用金属を含む陽極を形成する工程と、
前記陽極を電解液中で陽極酸化することにより誘電体層を形成する工程と、
前記誘電体層上に陰極を配置する工程とを備え、
前記誘電体層を形成する工程は、六フッ化物イオンを含む0.001重量%〜5.0重量%の濃度の前記電解液中で陽極酸化を行う、電解コンデンサの製造方法。 - 前記電解液は、ヘキサフルオロケイ酸アンモニウム、ヘキサフルオロゲルマニウム酸アンモニウムおよびヘキサフルオロジルコニウム酸アンモニウムから選択される少なくとも1種を含んでいる、請求項1に記載の電解コンデンサの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006205359A JP4753809B2 (ja) | 2006-07-27 | 2006-07-27 | 電解コンデンサの製造方法 |
US11/828,045 US20080047116A1 (en) | 2006-07-27 | 2007-07-25 | Method of producing electrolytic capacitor |
CNA2007101391318A CN101114543A (zh) | 2006-07-27 | 2007-07-26 | 电解电容器的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006205359A JP4753809B2 (ja) | 2006-07-27 | 2006-07-27 | 電解コンデンサの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008034566A JP2008034566A (ja) | 2008-02-14 |
JP4753809B2 true JP4753809B2 (ja) | 2011-08-24 |
Family
ID=39022804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006205359A Expired - Fee Related JP4753809B2 (ja) | 2006-07-27 | 2006-07-27 | 電解コンデンサの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20080047116A1 (ja) |
JP (1) | JP4753809B2 (ja) |
CN (1) | CN101114543A (ja) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU648925B2 (en) * | 1991-10-21 | 1994-05-05 | Matsushita Electric Industrial Co., Ltd. | Electrolytic capacitor and method for producing the same |
US5733661A (en) * | 1994-11-11 | 1998-03-31 | Mitsubishi Chemical Corporation | High-permittivity composite oxide film and uses thereof |
KR100697354B1 (ko) * | 2001-12-04 | 2007-03-20 | 신닛뽄세이테쯔 카부시키카이샤 | 금속 산화물 및/또는 금속 수산화물 피복 금속재료와 그제조방법 |
JP4307820B2 (ja) * | 2002-11-07 | 2009-08-05 | 三菱化学株式会社 | アルミニウム電解コンデンサ |
JP4401195B2 (ja) * | 2004-03-09 | 2010-01-20 | 三洋電機株式会社 | 固体電解コンデンサおよびその製造方法 |
JP4383228B2 (ja) * | 2004-03-31 | 2009-12-16 | 三洋電機株式会社 | 固体電解コンデンサ |
JP4383227B2 (ja) * | 2004-03-31 | 2009-12-16 | 三洋電機株式会社 | 固体電解コンデンサおよびその製造方法 |
JP2006041030A (ja) * | 2004-07-23 | 2006-02-09 | Nippon Steel Corp | コンデンサ用電極箔及びその製造方法 |
JP5009627B2 (ja) * | 2004-11-12 | 2012-08-22 | 株式会社カネカ | イオン性液体およびその製造方法、金属表面の酸化皮膜形成方法、電解コンデンサならびに電解質 |
-
2006
- 2006-07-27 JP JP2006205359A patent/JP4753809B2/ja not_active Expired - Fee Related
-
2007
- 2007-07-25 US US11/828,045 patent/US20080047116A1/en not_active Abandoned
- 2007-07-26 CN CNA2007101391318A patent/CN101114543A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2008034566A (ja) | 2008-02-14 |
CN101114543A (zh) | 2008-01-30 |
US20080047116A1 (en) | 2008-02-28 |
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