JP4741492B2 - マイクロキャビティ・ガモット・サブ画素を有するoledデバイス - Google Patents
マイクロキャビティ・ガモット・サブ画素を有するoledデバイス Download PDFInfo
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- JP4741492B2 JP4741492B2 JP2006523907A JP2006523907A JP4741492B2 JP 4741492 B2 JP4741492 B2 JP 4741492B2 JP 2006523907 A JP2006523907 A JP 2006523907A JP 2006523907 A JP2006523907 A JP 2006523907A JP 4741492 B2 JP4741492 B2 JP 4741492B2
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- 229910003437 indium oxide Inorganic materials 0.000 description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 8
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 8
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- 229910052782 aluminium Inorganic materials 0.000 description 4
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 4
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 4
- 229910052714 tellurium Inorganic materials 0.000 description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 229910000410 antimony oxide Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
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- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 3
- ORFSSYGWXNGVFB-UHFFFAOYSA-N sodium 4-amino-6-[[4-[4-[(8-amino-1-hydroxy-5,7-disulfonaphthalen-2-yl)diazenyl]-3-methoxyphenyl]-2-methoxyphenyl]diazenyl]-5-hydroxynaphthalene-1,3-disulfonic acid Chemical compound COC1=C(C=CC(=C1)C2=CC(=C(C=C2)N=NC3=C(C4=C(C=C3)C(=CC(=C4N)S(=O)(=O)O)S(=O)(=O)O)O)OC)N=NC5=C(C6=C(C=C5)C(=CC(=C6N)S(=O)(=O)O)S(=O)(=O)O)O.[Na+] ORFSSYGWXNGVFB-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
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- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
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- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
- H01J63/04—Vessels provided with luminescent coatings; Selection of materials for the coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
(a)発光画素アレイを含み、各画素が、光を生成する1つ以上の発光層を含む有機層と、離間した電極とを有するサブ画素を含み、そして、色ガモットを画定する色を生成する3つ以上のガモット・サブ画素と、該ガモット・サブ画素によって生成される色ガモット内の光を生成する1つ以上のサブ画素とがあり;そして、
(b)該ガモット・サブ画素のうちの1つ以上が、マイクロキャビティを形成する機能を発揮するリフレクターと半透明リフレクターとを含む、
OLEDデバイスによって達成される。
21a ガモット・サブ画素
21b ガモット・サブ画素
21c ガモット・サブ画素
21d ガモット内サブ画素
22a 非マイクロキャビティ・ガモット・サブ画素
22b マイクロキャビティ・ガモット・サブ画素
22c マイクロキャビティ・ガモット・サブ画素
22d ガモット内サブ画素
30a 光
30b 光
30c 光
30d 光
100 基板
110 アクティブ・マトリックス回路
111 半導体アクティブ層
112 ゲート誘電体
113 ゲート導体
114 第1絶縁層
115 電力線
116 信号線
117 第2絶縁層
120a 半透明リフレクター
120b 半透明リフレクター
120c 半透明リフレクター
130 透明電極
130a 透明電極
130d 透明電極
140a 透明キャビティ・スペーサー層
140b 透明キャビティ・スペーサー層
150a リフレクター
150b リフレクター
150c リフレクター
150d リフレクター
160 画素間誘電体
210 正孔注入層
212 正孔輸送層
213 発光層
214 電子輸送層
220 リフレクター
230 半透明リフレクター
240 透明電極
310 カラーフィルター
Claims (4)
- OLEDデバイスであって:
(a)発光画素アレイを含み、各画素が、光を生成する1つ以上の発光層を含む有機層と、離間した電極とを有するサブ画素を含み、そして、色ガモットを画定する色を生成する3つ以上のガモット・サブ画素と、該ガモット・サブ画素によって生成される色ガモット内の光を生成する1つ以上のサブ画素とがあり;そして
(b)該ガモット・サブ画素のうちの1つ以上が、マイクロキャビティを形成する機能を発揮するリフレクターと半透明リフレクターとを含み、
マイクロキャビティ構造を有する該ガモット・サブ画素はさらに、透明キャビティ・スペーサー層を含み、該透明キャビティ・スペーサー層の厚さ、該透明キャビティ・スペーサー層の屈折率、又はその両方を、ガモット・サブ画素毎の有機層の厚さ及び屈折率との関連において、異なる色のガモット・サブ画素毎に別個に調節することにより、マイクロキャビティを所望の色に調整し、
該ガモット・サブ画素のうちの1つの該透明キャビティ・スペーサー層が、該ガモット内サブ画素のうちの1つ以上の透明電極と同じ材料及び厚さから形成されており、
該ガモット内サブ画素は、半透明リフレクターを有しない、OLEDデバイス。 - OLEDデバイスであって:
(a)発光画素アレイを含み、各画素が、光を生成する1つ以上の発光層を含む有機層と、離間した電極とを有するサブ画素を含み、そして、色ガモットを画定する色を生成する3つ以上のガモット・サブ画素と、該ガモット・サブ画素によって生成される色ガモット内の光を生成する1つ以上のサブ画素とがあり;そして
(b)該ガモット・サブ画素のうちの1つ以上が、マイクロキャビティを形成する機能を発揮するリフレクターと半透明リフレクターとを含み、
マイクロキャビティ構造を有する該ガモット・サブ画素のうちの1つを除く全てがさらに、透明キャビティ・スペーサー層を含み、該透明キャビティ・スペーサー層の厚さ、該透明キャビティ・スペーサー層の屈折率、又はその両方を、ガモット・サブ画素毎の有機層の厚さ及び屈折率との関連において、異なる色のガモット・サブ画素毎に別個に調節することにより、マイクロキャビティを所望の色に調整し、
該ガモット・サブ画素のうちの1つの該透明キャビティ・スペーサー層が、該ガモット内サブ画素のうちの1つ以上の透明電極と同じ材料及び厚さから形成されており、
該ガモット内サブ画素は、半透明リフレクターを有しない、OLEDデバイス。 - 該デバイスが底部発光型である、請求項1または2に記載のOLEDデバイス。
- 該デバイスが上部発光型である、請求項1または2に記載のOLEDデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/643,837 | 2003-08-19 | ||
US10/643,837 US7030553B2 (en) | 2003-08-19 | 2003-08-19 | OLED device having microcavity gamut subpixels and a within gamut subpixel |
PCT/US2004/025741 WO2005020344A1 (en) | 2003-08-19 | 2004-08-09 | Oled device having microcavity gamut subpixels |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007503093A JP2007503093A (ja) | 2007-02-15 |
JP2007503093A5 JP2007503093A5 (ja) | 2007-09-20 |
JP4741492B2 true JP4741492B2 (ja) | 2011-08-03 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006523907A Expired - Lifetime JP4741492B2 (ja) | 2003-08-19 | 2004-08-09 | マイクロキャビティ・ガモット・サブ画素を有するoledデバイス |
Country Status (5)
Country | Link |
---|---|
US (1) | US7030553B2 (ja) |
JP (1) | JP4741492B2 (ja) |
KR (1) | KR101069235B1 (ja) |
CN (1) | CN100459144C (ja) |
WO (1) | WO2005020344A1 (ja) |
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- 2004-08-09 CN CNB2004800239271A patent/CN100459144C/zh not_active Expired - Lifetime
- 2004-08-09 JP JP2006523907A patent/JP4741492B2/ja not_active Expired - Lifetime
- 2004-08-09 KR KR1020067003264A patent/KR101069235B1/ko active IP Right Grant
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Also Published As
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US7030553B2 (en) | 2006-04-18 |
WO2005020344A1 (en) | 2005-03-03 |
JP2007503093A (ja) | 2007-02-15 |
KR101069235B1 (ko) | 2011-10-04 |
CN100459144C (zh) | 2009-02-04 |
US20050040756A1 (en) | 2005-02-24 |
KR20060079194A (ko) | 2006-07-05 |
CN1839478A (zh) | 2006-09-27 |
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