JP4731714B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP4731714B2
JP4731714B2 JP2001118527A JP2001118527A JP4731714B2 JP 4731714 B2 JP4731714 B2 JP 4731714B2 JP 2001118527 A JP2001118527 A JP 2001118527A JP 2001118527 A JP2001118527 A JP 2001118527A JP 4731714 B2 JP4731714 B2 JP 4731714B2
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JP
Japan
Prior art keywords
type impurity
film
gate electrode
pair
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001118527A
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English (en)
Japanese (ja)
Other versions
JP2002057162A (ja
JP2002057162A5 (enExample
Inventor
舜平 山崎
健司 福永
潤 小山
和隆 犬飼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001118527A priority Critical patent/JP4731714B2/ja
Publication of JP2002057162A publication Critical patent/JP2002057162A/ja
Publication of JP2002057162A5 publication Critical patent/JP2002057162A5/ja
Application granted granted Critical
Publication of JP4731714B2 publication Critical patent/JP4731714B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2001118527A 2000-04-17 2001-04-17 発光装置 Expired - Fee Related JP4731714B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001118527A JP4731714B2 (ja) 2000-04-17 2001-04-17 発光装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000115699 2000-04-17
JP2000-115699 2000-04-17
JP2000115699 2000-04-17
JP2001118527A JP4731714B2 (ja) 2000-04-17 2001-04-17 発光装置

Publications (3)

Publication Number Publication Date
JP2002057162A JP2002057162A (ja) 2002-02-22
JP2002057162A5 JP2002057162A5 (enExample) 2008-04-10
JP4731714B2 true JP4731714B2 (ja) 2011-07-27

Family

ID=26590262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001118527A Expired - Fee Related JP4731714B2 (ja) 2000-04-17 2001-04-17 発光装置

Country Status (1)

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JP (1) JP4731714B2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4731715B2 (ja) * 2000-04-19 2011-07-27 株式会社半導体エネルギー研究所 発光装置の作製方法
JP4718677B2 (ja) 2000-12-06 2011-07-06 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
CN101673508B (zh) * 2002-01-18 2013-01-09 株式会社半导体能源研究所 发光器件
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP4493933B2 (ja) * 2002-05-17 2010-06-30 株式会社半導体エネルギー研究所 表示装置
US7592980B2 (en) 2002-06-05 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4408012B2 (ja) * 2002-07-01 2010-02-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004220907A (ja) * 2003-01-15 2004-08-05 Dainippon Printing Co Ltd 有機ｅｌディスプレイおよびディスプレイ用透明電極基板
JP4574130B2 (ja) 2003-06-18 2010-11-04 株式会社半導体エネルギー研究所 半導体装置、電子機器
JP4522904B2 (ja) * 2004-04-19 2010-08-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7692378B2 (en) * 2004-04-28 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Display device including an insulating layer with an opening
US7268498B2 (en) 2004-04-28 2007-09-11 Semiconductor Energy Laboratory Co., Ltd. Display device
JP4741286B2 (ja) * 2004-06-11 2011-08-03 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US7550769B2 (en) 2004-06-11 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and semiconductor device
US8148895B2 (en) 2004-10-01 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
JP4947910B2 (ja) * 2005-02-28 2012-06-06 三菱電機株式会社 半導体装置およびその製造方法
US7888702B2 (en) 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
US8999836B2 (en) 2005-05-13 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
JP4924293B2 (ja) * 2007-08-29 2012-04-25 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5459142B2 (ja) * 2010-08-11 2014-04-02 セイコーエプソン株式会社 有機ｅｌ装置、有機ｅｌ装置の製造方法、及び電子機器
WO2018229876A1 (ja) * 2017-06-13 2018-12-20 堺ディスプレイプロダクト株式会社 有機ｅｌデバイスおよびその製造方法
JP6567121B2 (ja) * 2018-03-28 2019-08-28 堺ディスプレイプロダクト株式会社 薄膜封止構造形成装置
JP6872586B2 (ja) * 2019-07-30 2021-05-19 堺ディスプレイプロダクト株式会社 有機ｅｌデバイスの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3086579B2 (ja) * 1993-12-28 2000-09-11 シャープ株式会社 薄膜トランジスタの製造方法
JPH08274336A (ja) * 1995-03-30 1996-10-18 Toshiba Corp 多結晶半導体薄膜トランジスタ及びその製造方法
JPH1074951A (ja) * 1996-08-29 1998-03-17 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH11345978A (ja) * 1998-04-03 1999-12-14 Toshiba Corp 薄膜トランジスタおよびその製造方法、液晶表示装置

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Publication number Publication date
JP2002057162A (ja) 2002-02-22

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