JP4731135B2 - 微細パターン形成材料を用いた電子デバイス装置の製造方法 - Google Patents

微細パターン形成材料を用いた電子デバイス装置の製造方法 Download PDF

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Publication number
JP4731135B2
JP4731135B2 JP2004196880A JP2004196880A JP4731135B2 JP 4731135 B2 JP4731135 B2 JP 4731135B2 JP 2004196880 A JP2004196880 A JP 2004196880A JP 2004196880 A JP2004196880 A JP 2004196880A JP 4731135 B2 JP4731135 B2 JP 4731135B2
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resist
resist pattern
pattern
water
seconds
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Japanese (ja)
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JP2006018095A5 (enExample
JP2006018095A (ja
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護 寺井
輝彦 熊田
健夫 石橋
哲郎 塙
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Renesas Electronics Corp
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Renesas Electronics Corp
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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2004196880A 2004-07-02 2004-07-02 微細パターン形成材料を用いた電子デバイス装置の製造方法 Expired - Lifetime JP4731135B2 (ja)

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JP2004196880A JP4731135B2 (ja) 2004-07-02 2004-07-02 微細パターン形成材料を用いた電子デバイス装置の製造方法

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JP2004196880A JP4731135B2 (ja) 2004-07-02 2004-07-02 微細パターン形成材料を用いた電子デバイス装置の製造方法

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JP2011061215A Division JP2011170360A (ja) 2011-03-18 2011-03-18 パターン形成材料およびそれを用いて製造した電子デバイス装置

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JP2006018095A JP2006018095A (ja) 2006-01-19
JP2006018095A5 JP2006018095A5 (enExample) 2007-11-08
JP4731135B2 true JP4731135B2 (ja) 2011-07-20

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5194521B2 (ja) * 2007-03-30 2013-05-08 富士通セミコンダクター株式会社 半導体装置の製造方法、パターン形成方法及びパターン補正装置
EP3304197A4 (en) 2015-06-04 2019-01-23 Kateeva, Inc. METHOD FOR PRODUCING AN ESTETRESIST PATTERN ON A METALLIC SURFACE
KR102626521B1 (ko) 2015-08-13 2024-01-17 카티바, 인크. 금속 표면 상에 에치 레지스트 패턴을 형성하는 방법
US10398034B2 (en) * 2016-12-12 2019-08-27 Kateeva, Inc. Methods of etching conductive features, and related devices and systems
KR20220127272A (ko) * 2020-01-13 2022-09-19 카티바, 인크. 잉크젯 인쇄 회로 기판

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000347414A (ja) * 1999-06-01 2000-12-15 Tokyo Ohka Kogyo Co Ltd レジストパターン微細化用塗膜形成剤及びそれを用いた微細パターン形成方法
JP4104117B2 (ja) * 2002-08-21 2008-06-18 東京応化工業株式会社 微細パターンの形成方法
JP2004093832A (ja) * 2002-08-30 2004-03-25 Renesas Technology Corp 微細パターン形成材料、微細パターン形成方法および半導体装置の製造方法
KR100585138B1 (ko) * 2004-04-08 2006-05-30 삼성전자주식회사 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법

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