JP4713990B2 - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
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- JP4713990B2 JP4713990B2 JP2005265341A JP2005265341A JP4713990B2 JP 4713990 B2 JP4713990 B2 JP 4713990B2 JP 2005265341 A JP2005265341 A JP 2005265341A JP 2005265341 A JP2005265341 A JP 2005265341A JP 4713990 B2 JP4713990 B2 JP 4713990B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 239000000945 filler Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 58
- 239000000463 material Substances 0.000 description 32
- 239000011229 interlayer Substances 0.000 description 26
- 239000003990 capacitor Substances 0.000 description 10
- 238000001039 wet etching Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/0005—Anti-stiction coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
- B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
- B81C1/00944—Maintaining a critical distance between the structures to be released
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0109—Bridges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H57/00—Electrostrictive relays; Piezoelectric relays
- H01H2057/006—Micromechanical piezoelectric relay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
- H01L27/0808—Varactor diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Micromachines (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Description
図1、図2は、第1の実施形態に係る半導体装置、例えば可変容量を示すものであり、図1は平面図、図2は図1のII−II線に沿った断面図である。
この後、図18に示すように、開口部19を介して例えば充填材21がウェットエッチングにより除去され、層間絶縁膜14内に開口部14aが形成される。充填材21の除去方法は、ウェットエッチングに限定されるものではない。充填材21が例えばポリシリコンの場合、ケミカルドライエッチング(CDE)を用いて除去することも可能である。
図20に示すように、このレジストパターン23及び上部電極18をマスクとして、例えばRIEにより、層間絶縁膜17及び支持部16−1が除去され、ダミーパターン15に対応した開口部20が形成される。これと共に、層間絶縁膜17、アクチュエータ層16のうち、開口部14aの長手方向に沿った両端部が、開口部14aの短手方向の幅より若干内側で平行に除去される。このため、図1に示すように、アクチュエータ層16が開口部14aを跨ぐように形成される。
次に、図22乃至図29を参照して、第2の実施形態について説明する。
次に、図23に示すように、層間絶縁膜上に上部電極18の電極材料18aが形成される。この後、図24に示すように、電極材料18aがCMPにより平坦化され、上部電極18が形成される。
この後、図28に示すように、開口部19を介して例えば充填材21がウェットエッチングにより除去され、層間絶縁膜14内に開口部14aが形成される。充填材21の除去方法は、ウェットエッチングに限定されるものではない。充填材21が例えばポリシリコンの場合、ケミカルドライエッチング(CDE)を用いて除去することも可能である。
図30は、変形例を示している。上記第1、第2の実施形態は、本発明を可変容量に適用した場合を示した。これに対して、図30は、第1の実施形態を例えばリレーに適用した例を示している。
Claims (5)
- 半導体基板上に形成された第1の電極と、
前記第1の電極と所定間隔離間して形成され、少なくとも1つの開口部を有する第2の電極と、
前記第2の電極に接続され、前記第2の電極を駆動するアクチュエータ層と、
前記第2の電極の下方で、前記少なくとも1つの開口部に対応して形成された少なくとも1つのダミーパターンと
を具備し、
前記ダミーパターンは、前記アクチュエータ層により前記第2の電極が駆動されたとき、前記開口部内に挿入されることを特徴とする半導体装置。 - 前記第1の電極と第2の電極の間に形成された少なくとも1つのダミーパターンをさらに具備することを特徴とする請求項1記載の半導体装置。
- 前記アクチュエータ層は、前記第2の電極が形成された支持部と、前記支持部に接続されたアクチュエータ部とを具備することを特徴とする請求項1記載の半導体装置。
- 前記アクチュエータ部は、圧電体膜と、前記圧電体膜に電圧を印加する第3、第4の電極を具備することを特徴とする請求項2記載の半導体装置。
- 半導体基板上に少なくとも1つのダミーパターンを形成し、
前記ダミーパターンを充填材により覆い、
前記充填材の表面を前記ダミーパターンと同等の高さに平坦化し、
前記充填材上にアクチュエータ層を形成し、
前記アクチュエータ層の前記充填材と対応する位置に第1の開口部を形成し、
前記第1の開口部から前記充填材を除去し、
前記ダミーパターンに対応する位置に前記ダミーパターンが挿入可能な少なくとも1つの第2の開口部を形成する
ことを特徴とする半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005265341A JP4713990B2 (ja) | 2005-09-13 | 2005-09-13 | 半導体装置とその製造方法 |
US11/300,585 US7723822B2 (en) | 2005-09-13 | 2005-12-15 | MEMS element having a dummy pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005265341A JP4713990B2 (ja) | 2005-09-13 | 2005-09-13 | 半導体装置とその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007075931A JP2007075931A (ja) | 2007-03-29 |
JP4713990B2 true JP4713990B2 (ja) | 2011-06-29 |
Family
ID=37892838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005265341A Expired - Fee Related JP4713990B2 (ja) | 2005-09-13 | 2005-09-13 | 半導体装置とその製造方法 |
Country Status (2)
Country | Link |
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US (1) | US7723822B2 (ja) |
JP (1) | JP4713990B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4737140B2 (ja) * | 2006-10-20 | 2011-07-27 | セイコーエプソン株式会社 | Memsデバイスおよびその製造方法 |
JP2009055683A (ja) * | 2007-08-24 | 2009-03-12 | Toshiba Corp | 圧電駆動型mems装置および携帯端末 |
FR2925888A1 (fr) * | 2007-12-27 | 2009-07-03 | Commissariat Energie Atomique | Dispositif a structure pre-liberee |
JPWO2009101757A1 (ja) * | 2008-02-14 | 2011-06-09 | パナソニック株式会社 | コンデンサマイクロホン及びmemsデバイス |
US8368136B2 (en) * | 2008-07-03 | 2013-02-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrating a capacitor in a metal gate last process |
CN102859734B (zh) * | 2010-04-23 | 2014-12-10 | 株式会社村田制作所 | 压电致动器以及压电致动器的制造方法 |
JP5660216B2 (ja) * | 2011-07-15 | 2015-01-28 | 株式会社村田製作所 | 薄膜デバイスおよび薄膜デバイスの製造方法 |
JP6091317B2 (ja) * | 2013-04-26 | 2017-03-08 | 三菱電機株式会社 | マイクロデバイスの製造方法 |
US9917243B2 (en) * | 2014-10-16 | 2018-03-13 | Analog Devices, Inc. | Method of fabricating piezoelectric MEMS devices |
Citations (10)
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JPH08162006A (ja) * | 1994-11-30 | 1996-06-21 | Canon Inc | 電子放出素子、電子源、及びそれを用いた画像形成装置 |
JPH0917300A (ja) * | 1995-06-22 | 1997-01-17 | Rockwell Internatl Corp | 微細電気機械スイッチ |
JPH10335333A (ja) * | 1997-03-31 | 1998-12-18 | Hitachi Ltd | 半導体集積回路装置およびその製造方法ならびに設計方法 |
JP2000058547A (ja) * | 1998-08-06 | 2000-02-25 | Oki Electric Ind Co Ltd | 半導体装置 |
WO2000060652A1 (fr) * | 1999-03-30 | 2000-10-12 | Citizen Watch Co., Ltd. | Procede de fabrication d'un substrat a couches minces et substrat a couches minces fabrique selon ce procede |
WO2003054938A1 (en) * | 2001-11-07 | 2003-07-03 | International Business Machines Corporation | Method of fabricating micro-electromechanical switches on cmos compatible substrates |
JP2004001140A (ja) * | 2002-05-31 | 2004-01-08 | Sony Corp | 中空構造体の製造方法、及びmems素子の製造方法 |
WO2004019362A1 (en) * | 2002-08-26 | 2004-03-04 | International Business Machines Corporation | Diaphragm activated micro-electromechanical switch |
JP2006088281A (ja) * | 2004-09-24 | 2006-04-06 | Fuji Xerox Co Ltd | 微小構造体の製造方法、および基板 |
JP2006294866A (ja) * | 2005-04-11 | 2006-10-26 | Toshiba Corp | 半導体装置 |
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US6359374B1 (en) * | 1999-11-23 | 2002-03-19 | Mcnc | Miniature electrical relays using a piezoelectric thin film as an actuating element |
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US6355498B1 (en) * | 2000-08-11 | 2002-03-12 | Agere Systems Guartian Corp. | Thin film resonators fabricated on membranes created by front side releasing |
US6377438B1 (en) * | 2000-10-23 | 2002-04-23 | Mcnc | Hybrid microelectromechanical system tunable capacitor and associated fabrication methods |
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WO2005117042A1 (ja) * | 2004-05-31 | 2005-12-08 | Fujitsu Limited | 可変キャパシタ及びその製造方法 |
-
2005
- 2005-09-13 JP JP2005265341A patent/JP4713990B2/ja not_active Expired - Fee Related
- 2005-12-15 US US11/300,585 patent/US7723822B2/en not_active Expired - Fee Related
Patent Citations (10)
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JPH08162006A (ja) * | 1994-11-30 | 1996-06-21 | Canon Inc | 電子放出素子、電子源、及びそれを用いた画像形成装置 |
JPH0917300A (ja) * | 1995-06-22 | 1997-01-17 | Rockwell Internatl Corp | 微細電気機械スイッチ |
JPH10335333A (ja) * | 1997-03-31 | 1998-12-18 | Hitachi Ltd | 半導体集積回路装置およびその製造方法ならびに設計方法 |
JP2000058547A (ja) * | 1998-08-06 | 2000-02-25 | Oki Electric Ind Co Ltd | 半導体装置 |
WO2000060652A1 (fr) * | 1999-03-30 | 2000-10-12 | Citizen Watch Co., Ltd. | Procede de fabrication d'un substrat a couches minces et substrat a couches minces fabrique selon ce procede |
WO2003054938A1 (en) * | 2001-11-07 | 2003-07-03 | International Business Machines Corporation | Method of fabricating micro-electromechanical switches on cmos compatible substrates |
JP2004001140A (ja) * | 2002-05-31 | 2004-01-08 | Sony Corp | 中空構造体の製造方法、及びmems素子の製造方法 |
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JP2006294866A (ja) * | 2005-04-11 | 2006-10-26 | Toshiba Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
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US7723822B2 (en) | 2010-05-25 |
US20070069342A1 (en) | 2007-03-29 |
JP2007075931A (ja) | 2007-03-29 |
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