JP4689973B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4689973B2
JP4689973B2 JP2004171132A JP2004171132A JP4689973B2 JP 4689973 B2 JP4689973 B2 JP 4689973B2 JP 2004171132 A JP2004171132 A JP 2004171132A JP 2004171132 A JP2004171132 A JP 2004171132A JP 4689973 B2 JP4689973 B2 JP 4689973B2
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JP
Japan
Prior art keywords
current
cell
memory cells
cells
data
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Expired - Fee Related
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JP2004171132A
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English (en)
Japanese (ja)
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JP2005353145A (ja
JP2005353145A5 (enExample
Inventor
高晴 辻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
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Priority to JP2004171132A priority Critical patent/JP4689973B2/ja
Publication of JP2005353145A publication Critical patent/JP2005353145A/ja
Publication of JP2005353145A5 publication Critical patent/JP2005353145A5/ja
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Publication of JP4689973B2 publication Critical patent/JP4689973B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Tests Of Electronic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP2004171132A 2004-06-09 2004-06-09 半導体記憶装置 Expired - Fee Related JP4689973B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004171132A JP4689973B2 (ja) 2004-06-09 2004-06-09 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004171132A JP4689973B2 (ja) 2004-06-09 2004-06-09 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2005353145A JP2005353145A (ja) 2005-12-22
JP2005353145A5 JP2005353145A5 (enExample) 2007-07-05
JP4689973B2 true JP4689973B2 (ja) 2011-06-01

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ID=35587505

Family Applications (1)

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JP2004171132A Expired - Fee Related JP4689973B2 (ja) 2004-06-09 2004-06-09 半導体記憶装置

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JP (1) JP4689973B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4768770B2 (ja) * 2008-03-06 2011-09-07 株式会社東芝 半導体記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3237610B2 (ja) * 1998-05-19 2001-12-10 日本電気株式会社 不揮発性半導体記憶装置
JP4066638B2 (ja) * 2000-11-27 2008-03-26 株式会社日立製作所 半導体装置
JP2003059299A (ja) * 2001-08-21 2003-02-28 Nec Microsystems Ltd 半導体記憶装置とそのテスト方法
JP3968274B2 (ja) * 2002-07-08 2007-08-29 富士通株式会社 半導体記憶装置
JP2004062922A (ja) * 2002-07-25 2004-02-26 Renesas Technology Corp 不揮発性半導体記憶装置
JP2004079138A (ja) * 2002-08-22 2004-03-11 Renesas Technology Corp 不揮発性半導体記憶装置

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Publication number Publication date
JP2005353145A (ja) 2005-12-22

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