JP4683710B2 - 液晶表示装置、ｅｌ表示装置及び電子機器 - Google Patents

液晶表示装置、ｅｌ表示装置及び電子機器 Download PDF

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Publication number
JP4683710B2
JP4683710B2 JP2000350612A JP2000350612A JP4683710B2 JP 4683710 B2 JP4683710 B2 JP 4683710B2 JP 2000350612 A JP2000350612 A JP 2000350612A JP 2000350612 A JP2000350612 A JP 2000350612A JP 4683710 B2 JP4683710 B2 JP 4683710B2
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Japan
Prior art keywords
impurity region
film
gate wiring
tft
gate
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Expired - Fee Related
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JP2000350612A
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Japanese (ja)
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JP2001210833A (ja
JP2001210833A5 (enExample
Inventor
慎志 前川
美佐子 仲沢
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000350612A priority Critical patent/JP4683710B2/ja
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Publication of JP2001210833A5 publication Critical patent/JP2001210833A5/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2000350612A 1999-11-18 2000-11-17 液晶表示装置、ｅｌ表示装置及び電子機器 Expired - Fee Related JP4683710B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000350612A JP4683710B2 (ja) 1999-11-18 2000-11-17 液晶表示装置、ｅｌ表示装置及び電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP32878599 1999-11-18
JP11-328785 1999-11-18
JP2000350612A JP4683710B2 (ja) 1999-11-18 2000-11-17 液晶表示装置、ｅｌ表示装置及び電子機器

Publications (3)

Publication Number Publication Date
JP2001210833A JP2001210833A (ja) 2001-08-03
JP2001210833A5 JP2001210833A5 (enExample) 2007-12-27
JP4683710B2 true JP4683710B2 (ja) 2011-05-18

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JP2000350612A Expired - Fee Related JP4683710B2 (ja) 1999-11-18 2000-11-17 液晶表示装置、ｅｌ表示装置及び電子機器

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JP (1) JP4683710B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1593159B1 (en) 2003-02-14 2013-05-29 Canon Kabushiki Kaisha Radiation image pickup device
JP2004265933A (ja) * 2003-02-14 2004-09-24 Canon Inc 放射線検出装置
JP5288234B2 (ja) * 2007-09-07 2013-09-11 セイコーエプソン株式会社 半導体装置、電気光学装置、電子機器、半導体装置の製造方法及び電気光学装置の製造方法
JP6435860B2 (ja) * 2012-11-05 2018-12-19 大日本印刷株式会社 配線構造体
JP2014236177A (ja) * 2013-06-05 2014-12-15 日本電信電話株式会社 配線構造とその形成方法
WO2020188643A1 (ja) * 2019-03-15 2020-09-24 シャープ株式会社 表示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01205569A (ja) * 1988-02-12 1989-08-17 Seiko Epson Corp Ｍｏｓ型半導体装置の製造方法
JPH0955508A (ja) * 1995-08-10 1997-02-25 Sanyo Electric Co Ltd 薄膜トランジスタ及びその製造方法
JPH1187716A (ja) * 1997-09-02 1999-03-30 Toshiba Corp 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法並びに液晶表示装置用アレイ基板
KR100384672B1 (ko) * 1998-01-30 2003-05-22 가부시키가이샤 히타치세이사쿠쇼 액정 표시 장치
JPH10321869A (ja) * 1998-03-30 1998-12-04 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000349297A (ja) * 1999-03-10 2000-12-15 Matsushita Electric Ind Co Ltd 薄膜トランジスタ、パネル及びそれらの製造方法

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JP2001210833A (ja) 2001-08-03

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