JP4677546B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4677546B2
JP4677546B2 JP2000308486A JP2000308486A JP4677546B2 JP 4677546 B2 JP4677546 B2 JP 4677546B2 JP 2000308486 A JP2000308486 A JP 2000308486A JP 2000308486 A JP2000308486 A JP 2000308486A JP 4677546 B2 JP4677546 B2 JP 4677546B2
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Japan
Prior art keywords
film
region
impurity
semiconductor
substrate
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Expired - Fee Related
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JP2000308486A
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Japanese (ja)
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JP2002118265A5 (enExample
JP2002118265A (ja
Inventor
理 中村
誠之 梶原
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Transforming Electric Information Into Light Information (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000308486A 2000-10-06 2000-10-06 半導体装置の作製方法 Expired - Fee Related JP4677546B2 (ja)

Priority Applications (1)

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JP2000308486A JP4677546B2 (ja) 2000-10-06 2000-10-06 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000308486A JP4677546B2 (ja) 2000-10-06 2000-10-06 半導体装置の作製方法

Publications (3)

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JP2002118265A JP2002118265A (ja) 2002-04-19
JP2002118265A5 JP2002118265A5 (enExample) 2007-11-22
JP4677546B2 true JP4677546B2 (ja) 2011-04-27

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JP2000308486A Expired - Fee Related JP4677546B2 (ja) 2000-10-06 2000-10-06 半導体装置の作製方法

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Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2592966B2 (ja) * 1988-10-31 1997-03-19 シャープ株式会社 イオン注入方法及びその装置
JP2718757B2 (ja) * 1989-05-16 1998-02-25 株式会社東芝 Ｍｏｓ型半導体装置及びその製造方法
JP2993080B2 (ja) * 1990-09-11 1999-12-20 セイコーエプソン株式会社 相補型薄膜トランジスタの製造方法
JP3539821B2 (ja) * 1995-03-27 2004-07-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000133594A (ja) * 1998-08-18 2000-05-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

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JP2002118265A (ja) 2002-04-19

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