JP4675439B2 - 化学気相堆積チャンバ内でプラズマ前処理を用いた窒化タングステンの堆積 - Google Patents

化学気相堆積チャンバ内でプラズマ前処理を用いた窒化タングステンの堆積 Download PDF

Info

Publication number
JP4675439B2
JP4675439B2 JP50576499A JP50576499A JP4675439B2 JP 4675439 B2 JP4675439 B2 JP 4675439B2 JP 50576499 A JP50576499 A JP 50576499A JP 50576499 A JP50576499 A JP 50576499A JP 4675439 B2 JP4675439 B2 JP 4675439B2
Authority
JP
Japan
Prior art keywords
tungsten nitride
wafer
deposition
plasma
tungsten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP50576499A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002507327A (ja
JP2002507327A5 (enExample
Inventor
チャン，リン
ガングリ，セシャドリ
マック，アルフレッド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/884,811 external-priority patent/US6309713B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2002507327A publication Critical patent/JP2002507327A/ja
Publication of JP2002507327A5 publication Critical patent/JP2002507327A5/ja
Application granted granted Critical
Publication of JP4675439B2 publication Critical patent/JP4675439B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0225—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/664—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a barrier layer between the layer of silicon and an upper metal or metal silicide layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP50576499A 1997-06-30 1998-06-26 化学気相堆積チャンバ内でプラズマ前処理を用いた窒化タングステンの堆積 Expired - Lifetime JP4675439B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US08/884,811 US6309713B1 (en) 1997-06-30 1997-06-30 Deposition of tungsten nitride by plasma enhanced chemical vapor deposition
US08/884,811 1997-06-30
US09/067,429 US6872429B1 (en) 1997-06-30 1998-04-27 Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber
US09/067,429 1998-04-27
PCT/US1998/013305 WO1999000830A1 (en) 1997-06-30 1998-06-26 Improved deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber

Publications (3)

Publication Number Publication Date
JP2002507327A JP2002507327A (ja) 2002-03-05
JP2002507327A5 JP2002507327A5 (enExample) 2005-12-22
JP4675439B2 true JP4675439B2 (ja) 2011-04-20

Family

ID=26747858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50576499A Expired - Lifetime JP4675439B2 (ja) 1997-06-30 1998-06-26 化学気相堆積チャンバ内でプラズマ前処理を用いた窒化タングステンの堆積

Country Status (6)

Country Link
US (1) US6872429B1 (enExample)
EP (1) EP0996973A1 (enExample)
JP (1) JP4675439B2 (enExample)
KR (1) KR20010014314A (enExample)
TW (1) TW432529B (enExample)
WO (1) WO1999000830A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150257A (en) * 1998-08-28 2000-11-21 Micron Technology, Inc. Plasma treatment of an interconnect surface during formation of an interlayer dielectric
US6355571B1 (en) * 1998-11-17 2002-03-12 Applied Materials, Inc. Method and apparatus for reducing copper oxidation and contamination in a semiconductor device
US6391785B1 (en) * 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
WO2004061154A1 (ja) * 2002-12-27 2004-07-22 Ulvac Inc. 窒化タングステン膜の成膜方法
US7311946B2 (en) 2003-05-02 2007-12-25 Air Products And Chemicals, Inc. Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes
JP2006156716A (ja) * 2004-11-30 2006-06-15 Renesas Technology Corp 半導体装置およびその製造方法
JP4738178B2 (ja) * 2005-06-17 2011-08-03 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4608530B2 (ja) * 2007-09-07 2011-01-12 株式会社アルバック バリア膜製造方法
JP2010010624A (ja) * 2008-06-30 2010-01-14 Ulvac Japan Ltd 半導体装置の製造装置及び半導体装置の製造方法
JP5925476B2 (ja) * 2011-12-09 2016-05-25 株式会社アルバック タングステン化合物膜の形成方法
US9275865B2 (en) 2012-10-31 2016-03-01 Applied Materials, Inc. Plasma treatment of film for impurity removal
US10622214B2 (en) * 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
KR102569956B1 (ko) 2017-07-25 2023-08-22 어플라이드 머티어리얼스, 인코포레이티드 개선된 박막 캡슐화
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
EP3768874A4 (en) 2018-03-19 2022-03-30 Applied Materials, Inc. METHODS FOR DEPOSITING COATINGS ON AEROSPACE ELEMENTS
EP3784815A4 (en) 2018-04-27 2021-11-03 Applied Materials, Inc. PROTECTION OF COMPONENTS AGAINST CORROSION
US11009339B2 (en) 2018-08-23 2021-05-18 Applied Materials, Inc. Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries
US10636705B1 (en) 2018-11-29 2020-04-28 Applied Materials, Inc. High pressure annealing of metal gate structures
US11732353B2 (en) 2019-04-26 2023-08-22 Applied Materials, Inc. Methods of protecting aerospace components against corrosion and oxidation
US11794382B2 (en) 2019-05-16 2023-10-24 Applied Materials, Inc. Methods for depositing anti-coking protective coatings on aerospace components
US11697879B2 (en) 2019-06-14 2023-07-11 Applied Materials, Inc. Methods for depositing sacrificial coatings on aerospace components
US11466364B2 (en) 2019-09-06 2022-10-11 Applied Materials, Inc. Methods for forming protective coatings containing crystallized aluminum oxide
US11519066B2 (en) 2020-05-21 2022-12-06 Applied Materials, Inc. Nitride protective coatings on aerospace components and methods for making the same
US11739429B2 (en) 2020-07-03 2023-08-29 Applied Materials, Inc. Methods for refurbishing aerospace components
US11976002B2 (en) 2021-01-05 2024-05-07 Applied Materials, Inc. Methods for encapsulating silver mirrors on optical structures
CN112938910B (zh) * 2021-04-16 2022-09-20 中国检验检疫科学研究院 一种薄片状氮化钨纳米材料的合成方法及应用

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2571542B1 (fr) * 1984-10-09 1987-01-23 Labo Electronique Physique Procede de realisation d'un dispositif semiconducteur incluant l'action de plasma
DE3782904T2 (de) * 1986-09-17 1993-04-08 Fujitsu Ltd Verfahren zur ausbildung einer kupfer enthaltenden metallisierungsschicht auf der oberflaeche eines halbleiterbauelementes.
US4913929A (en) * 1987-04-21 1990-04-03 The Board Of Trustees Of The Leland Stanford Junior University Thermal/microwave remote plasma multiprocessing reactor and method of use
US4751101A (en) * 1987-04-30 1988-06-14 International Business Machines Corporation Low stress tungsten films by silicon reduction of WF6
JPS63317676A (ja) 1987-06-19 1988-12-26 Sharp Corp 無粒構造金属化合物薄膜の製造方法
JPS645015A (en) 1987-06-26 1989-01-10 Sharp Kk Manufacture of integrated circuit element
US4847111A (en) * 1988-06-30 1989-07-11 Hughes Aircraft Company Plasma-nitridated self-aligned tungsten system for VLSI interconnections
EP0370775B1 (en) * 1988-11-21 1996-06-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US5232872A (en) 1989-05-09 1993-08-03 Fujitsu Limited Method for manufacturing semiconductor device
IT1241922B (it) 1990-03-09 1994-02-01 Eniricerche Spa Procedimento per realizzare rivestimenti di carburo di silicio
KR100228259B1 (ko) 1990-10-24 1999-11-01 고지마 마따오 박막의 형성방법 및 반도체장치
US5250467A (en) 1991-03-29 1993-10-05 Applied Materials, Inc. Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer
KR930011538B1 (ko) * 1991-07-16 1993-12-10 한국과학기술연구원 실리콘 반도체소자의 금속배선 형성용 텅스텐 질화박막 증착방법
WO1994004716A1 (en) * 1992-08-14 1994-03-03 Hughes Aircraft Company Surface preparation and deposition method for titanium nitride onto carbonaceous materials
KR100326488B1 (ko) 1993-06-21 2002-06-20 조셉 제이. 스위니 플라즈마화학기상증착법
WO1995034092A1 (en) 1994-06-03 1995-12-14 Materials Research Corporation A method of nitridization of titanium thin films
JPH0869994A (ja) * 1994-08-30 1996-03-12 Fujitsu Ltd 半導体装置の製造方法
US5576071A (en) * 1994-11-08 1996-11-19 Micron Technology, Inc. Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds
EP0711846A1 (en) 1994-11-14 1996-05-15 Applied Materials, Inc. Titanium nitride deposited by chemical vapor deposition
JP2978748B2 (ja) * 1995-11-22 1999-11-15 日本電気株式会社 半導体装置の製造方法
US6009827A (en) 1995-12-06 2000-01-04 Applied Materials, Inc. Apparatus for creating strong interface between in-situ SACVD and PECVD silicon oxide films
US5648175A (en) * 1996-02-14 1997-07-15 Applied Materials, Inc. Chemical vapor deposition reactor system and integrated circuit
US5633200A (en) * 1996-05-24 1997-05-27 Micron Technology, Inc. Process for manufacturing a large grain tungsten nitride film and process for manufacturing a lightly nitrided titanium salicide diffusion barrier with a large grain tungsten nitride cover layer
TW365685B (en) * 1996-10-31 1999-08-01 Texas Instruments Inc Low-temperature processes for depositing barrier films containing tungsten and nitrogen
EP0841690B1 (en) * 1996-11-12 2006-03-01 Samsung Electronics Co., Ltd. Tungsten nitride (WNx) layer manufacturing method and metal wiring manufacturing method
US6162715A (en) * 1997-06-30 2000-12-19 Applied Materials, Inc. Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
US5913145A (en) 1997-08-28 1999-06-15 Texas Instruments Incorporated Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures
US6095085A (en) * 1998-08-20 2000-08-01 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method

Also Published As

Publication number Publication date
WO1999000830A1 (en) 1999-01-07
TW432529B (en) 2001-05-01
JP2002507327A (ja) 2002-03-05
KR20010014314A (ko) 2001-02-26
US6872429B1 (en) 2005-03-29
EP0996973A1 (en) 2000-05-03

Similar Documents

Publication Publication Date Title
JP4675439B2 (ja) 化学気相堆積チャンバ内でプラズマ前処理を用いた窒化タングステンの堆積
US6309713B1 (en) Deposition of tungsten nitride by plasma enhanced chemical vapor deposition
KR102386744B1 (ko) 작은 임계 치수의 피쳐에서 텅스텐 컨택 저항을 개선하는 방법
US6656831B1 (en) Plasma-enhanced chemical vapor deposition of a metal nitride layer
US10014212B2 (en) Selective deposition of metallic films
CN102007573B (zh) 在铜表面上选择性钴沉积
US7262125B2 (en) Method of forming low-resistivity tungsten interconnects
US5207836A (en) Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus
US7211506B2 (en) Methods of forming cobalt layers for semiconductor devices
US6355106B1 (en) Deposition of copper with increased adhesion
US6491978B1 (en) Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors
US7977243B2 (en) Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
KR102234260B1 (ko) 금속계 막의 선택적 증착
US20070054487A1 (en) Atomic layer deposition processes for ruthenium materials
CN111357082B (zh) 针对pecvd金属掺杂的碳硬掩模的均质界面的沉积系统和方法
US6933021B2 (en) Method of TiSiN deposition using a chemical vapor deposition (CVD) process
US20160141203A1 (en) Cobalt selectivity improvement in selective cobalt process sequence
EP0418592B1 (en) Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus
JP2837087B2 (ja) 薄膜形成方法
CN109868459B (zh) 一种半导体设备
JPH07201738A (ja) 薄膜形成前処理方法および薄膜形成方法
CN101330044B (zh) 薄膜制造方法
TW202412080A (zh) 積體pvd鎢襯墊及無縫cvd鎢填充
JP2803556B2 (ja) バリアメタル層の形成方法
KR20000010182A (ko) 반도체장치의 확산 장벽층 형성방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050624

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050624

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090526

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090818

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100914

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101112

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20101213

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20101224

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110106

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110126

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140204

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20110317

A072 Dismissal of procedure [no reply to invitation to correct request for examination]

Free format text: JAPANESE INTERMEDIATE CODE: A072

Effective date: 20110719

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term