JP2002507327A5 - - Google Patents
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- JP2002507327A5 JP2002507327A5 JP1999505764A JP50576499A JP2002507327A5 JP 2002507327 A5 JP2002507327 A5 JP 2002507327A5 JP 1999505764 A JP1999505764 A JP 1999505764A JP 50576499 A JP50576499 A JP 50576499A JP 2002507327 A5 JP2002507327 A5 JP 2002507327A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/884,811 US6309713B1 (en) | 1997-06-30 | 1997-06-30 | Deposition of tungsten nitride by plasma enhanced chemical vapor deposition |
| US08/884,811 | 1997-06-30 | ||
| US09/067,429 | 1998-04-27 | ||
| US09/067,429 US6872429B1 (en) | 1997-06-30 | 1998-04-27 | Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber |
| PCT/US1998/013305 WO1999000830A1 (en) | 1997-06-30 | 1998-06-26 | Improved deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002507327A JP2002507327A (ja) | 2002-03-05 |
| JP2002507327A5 true JP2002507327A5 (enExample) | 2005-12-22 |
| JP4675439B2 JP4675439B2 (ja) | 2011-04-20 |
Family
ID=26747858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50576499A Expired - Lifetime JP4675439B2 (ja) | 1997-06-30 | 1998-06-26 | 化学気相堆積チャンバ内でプラズマ前処理を用いた窒化タングステンの堆積 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6872429B1 (enExample) |
| EP (1) | EP0996973A1 (enExample) |
| JP (1) | JP4675439B2 (enExample) |
| KR (1) | KR20010014314A (enExample) |
| TW (1) | TW432529B (enExample) |
| WO (1) | WO1999000830A1 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150257A (en) * | 1998-08-28 | 2000-11-21 | Micron Technology, Inc. | Plasma treatment of an interconnect surface during formation of an interlayer dielectric |
| US6355571B1 (en) * | 1998-11-17 | 2002-03-12 | Applied Materials, Inc. | Method and apparatus for reducing copper oxidation and contamination in a semiconductor device |
| US6391785B1 (en) * | 1999-08-24 | 2002-05-21 | Interuniversitair Microelektronica Centrum (Imec) | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
| KR101035221B1 (ko) * | 2002-12-27 | 2011-05-18 | 가부시키가이샤 알박 | 질화 텅스텐막의 형성 방법 |
| US7311946B2 (en) | 2003-05-02 | 2007-12-25 | Air Products And Chemicals, Inc. | Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes |
| JP2006156716A (ja) * | 2004-11-30 | 2006-06-15 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| JP4738178B2 (ja) * | 2005-06-17 | 2011-08-03 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP4608530B2 (ja) * | 2007-09-07 | 2011-01-12 | 株式会社アルバック | バリア膜製造方法 |
| JP2010010624A (ja) * | 2008-06-30 | 2010-01-14 | Ulvac Japan Ltd | 半導体装置の製造装置及び半導体装置の製造方法 |
| JP5925476B2 (ja) * | 2011-12-09 | 2016-05-25 | 株式会社アルバック | タングステン化合物膜の形成方法 |
| US9275865B2 (en) | 2012-10-31 | 2016-03-01 | Applied Materials, Inc. | Plasma treatment of film for impurity removal |
| US10622214B2 (en) * | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| CN110785866B (zh) | 2017-07-25 | 2022-07-19 | 应用材料公司 | 改良的薄膜包封 |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| US10633740B2 (en) | 2018-03-19 | 2020-04-28 | Applied Materials, Inc. | Methods for depositing coatings on aerospace components |
| EP3784815A4 (en) | 2018-04-27 | 2021-11-03 | Applied Materials, Inc. | PROTECTION OF COMPONENTS AGAINST CORROSION |
| US11009339B2 (en) | 2018-08-23 | 2021-05-18 | Applied Materials, Inc. | Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries |
| US10636705B1 (en) | 2018-11-29 | 2020-04-28 | Applied Materials, Inc. | High pressure annealing of metal gate structures |
| WO2020219332A1 (en) | 2019-04-26 | 2020-10-29 | Applied Materials, Inc. | Methods of protecting aerospace components against corrosion and oxidation |
| US11794382B2 (en) | 2019-05-16 | 2023-10-24 | Applied Materials, Inc. | Methods for depositing anti-coking protective coatings on aerospace components |
| US11697879B2 (en) | 2019-06-14 | 2023-07-11 | Applied Materials, Inc. | Methods for depositing sacrificial coatings on aerospace components |
| US11466364B2 (en) | 2019-09-06 | 2022-10-11 | Applied Materials, Inc. | Methods for forming protective coatings containing crystallized aluminum oxide |
| US11519066B2 (en) | 2020-05-21 | 2022-12-06 | Applied Materials, Inc. | Nitride protective coatings on aerospace components and methods for making the same |
| CN115734826A (zh) | 2020-07-03 | 2023-03-03 | 应用材料公司 | 用于翻新航空部件的方法 |
| US11976002B2 (en) | 2021-01-05 | 2024-05-07 | Applied Materials, Inc. | Methods for encapsulating silver mirrors on optical structures |
| CN112938910B (zh) * | 2021-04-16 | 2022-09-20 | 中国检验检疫科学研究院 | 一种薄片状氮化钨纳米材料的合成方法及应用 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2571542B1 (fr) * | 1984-10-09 | 1987-01-23 | Labo Electronique Physique | Procede de realisation d'un dispositif semiconducteur incluant l'action de plasma |
| DE3782904T2 (de) * | 1986-09-17 | 1993-04-08 | Fujitsu Ltd | Verfahren zur ausbildung einer kupfer enthaltenden metallisierungsschicht auf der oberflaeche eines halbleiterbauelementes. |
| US4913929A (en) * | 1987-04-21 | 1990-04-03 | The Board Of Trustees Of The Leland Stanford Junior University | Thermal/microwave remote plasma multiprocessing reactor and method of use |
| US4751101A (en) * | 1987-04-30 | 1988-06-14 | International Business Machines Corporation | Low stress tungsten films by silicon reduction of WF6 |
| JPS63317676A (ja) | 1987-06-19 | 1988-12-26 | Sharp Corp | 無粒構造金属化合物薄膜の製造方法 |
| JPS645015A (en) | 1987-06-26 | 1989-01-10 | Sharp Kk | Manufacture of integrated circuit element |
| US4847111A (en) * | 1988-06-30 | 1989-07-11 | Hughes Aircraft Company | Plasma-nitridated self-aligned tungsten system for VLSI interconnections |
| EP0370775B1 (en) * | 1988-11-21 | 1996-06-12 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| US5232872A (en) | 1989-05-09 | 1993-08-03 | Fujitsu Limited | Method for manufacturing semiconductor device |
| IT1241922B (it) | 1990-03-09 | 1994-02-01 | Eniricerche Spa | Procedimento per realizzare rivestimenti di carburo di silicio |
| KR100228259B1 (ko) | 1990-10-24 | 1999-11-01 | 고지마 마따오 | 박막의 형성방법 및 반도체장치 |
| US5250467A (en) | 1991-03-29 | 1993-10-05 | Applied Materials, Inc. | Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer |
| KR930011538B1 (ko) * | 1991-07-16 | 1993-12-10 | 한국과학기술연구원 | 실리콘 반도체소자의 금속배선 형성용 텅스텐 질화박막 증착방법 |
| DE69310493T2 (de) * | 1992-08-14 | 1997-12-18 | Hughes Aircraft Co | Oberflächepräparation und beschichtungs-methode für titannitrid auf gusseisen |
| JPH07142416A (ja) | 1993-06-21 | 1995-06-02 | Applied Materials Inc | 改良された界面を有する層のプラズマ化学蒸着法 |
| AU1745695A (en) | 1994-06-03 | 1996-01-04 | Materials Research Corporation | A method of nitridization of titanium thin films |
| JPH0869994A (ja) * | 1994-08-30 | 1996-03-12 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5576071A (en) * | 1994-11-08 | 1996-11-19 | Micron Technology, Inc. | Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds |
| EP0711846A1 (en) | 1994-11-14 | 1996-05-15 | Applied Materials, Inc. | Titanium nitride deposited by chemical vapor deposition |
| JP2978748B2 (ja) * | 1995-11-22 | 1999-11-15 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6009827A (en) | 1995-12-06 | 2000-01-04 | Applied Materials, Inc. | Apparatus for creating strong interface between in-situ SACVD and PECVD silicon oxide films |
| US5648175A (en) * | 1996-02-14 | 1997-07-15 | Applied Materials, Inc. | Chemical vapor deposition reactor system and integrated circuit |
| US5633200A (en) * | 1996-05-24 | 1997-05-27 | Micron Technology, Inc. | Process for manufacturing a large grain tungsten nitride film and process for manufacturing a lightly nitrided titanium salicide diffusion barrier with a large grain tungsten nitride cover layer |
| TW365685B (en) * | 1996-10-31 | 1999-08-01 | Texas Instruments Inc | Low-temperature processes for depositing barrier films containing tungsten and nitrogen |
| EP0841690B1 (en) * | 1996-11-12 | 2006-03-01 | Samsung Electronics Co., Ltd. | Tungsten nitride (WNx) layer manufacturing method and metal wiring manufacturing method |
| US6162715A (en) * | 1997-06-30 | 2000-12-19 | Applied Materials, Inc. | Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride |
| US5913145A (en) | 1997-08-28 | 1999-06-15 | Texas Instruments Incorporated | Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures |
| US6095085A (en) * | 1998-08-20 | 2000-08-01 | Micron Technology, Inc. | Photo-assisted remote plasma apparatus and method |
-
1998
- 1998-04-27 US US09/067,429 patent/US6872429B1/en not_active Expired - Lifetime
- 1998-06-26 WO PCT/US1998/013305 patent/WO1999000830A1/en not_active Ceased
- 1998-06-26 TW TW087110410A patent/TW432529B/zh not_active IP Right Cessation
- 1998-06-26 EP EP98934178A patent/EP0996973A1/en not_active Withdrawn
- 1998-06-26 JP JP50576499A patent/JP4675439B2/ja not_active Expired - Lifetime
- 1998-06-26 KR KR1019997012452A patent/KR20010014314A/ko not_active Withdrawn