JP4673222B2 - ドライフィルムレジスト - Google Patents

ドライフィルムレジスト Download PDF

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Publication number
JP4673222B2
JP4673222B2 JP2005514594A JP2005514594A JP4673222B2 JP 4673222 B2 JP4673222 B2 JP 4673222B2 JP 2005514594 A JP2005514594 A JP 2005514594A JP 2005514594 A JP2005514594 A JP 2005514594A JP 4673222 B2 JP4673222 B2 JP 4673222B2
Authority
JP
Japan
Prior art keywords
acid
group
alkali
resist
mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005514594A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2005036268A1 (ja
Inventor
将毅 保坂
正敏 本間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adeka Corp
Original Assignee
Adeka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adeka Corp filed Critical Adeka Corp
Publication of JPWO2005036268A1 publication Critical patent/JPWO2005036268A1/ja
Application granted granted Critical
Publication of JP4673222B2 publication Critical patent/JP4673222B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
JP2005514594A 2003-10-14 2004-10-07 ドライフィルムレジスト Expired - Fee Related JP4673222B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003353720 2003-10-14
JP2003353720 2003-10-14
PCT/JP2004/014832 WO2005036268A1 (ja) 2003-10-14 2004-10-07 フォトレジスト組成物

Publications (2)

Publication Number Publication Date
JPWO2005036268A1 JPWO2005036268A1 (ja) 2007-11-22
JP4673222B2 true JP4673222B2 (ja) 2011-04-20

Family

ID=34431168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005514594A Expired - Fee Related JP4673222B2 (ja) 2003-10-14 2004-10-07 ドライフィルムレジスト

Country Status (5)

Country Link
JP (1) JP4673222B2 (zh)
KR (1) KR101073417B1 (zh)
CN (1) CN1853138B (zh)
TW (1) TWI346836B (zh)
WO (1) WO2005036268A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7601482B2 (en) * 2006-03-28 2009-10-13 Az Electronic Materials Usa Corp. Negative photoresist compositions
SG176274A1 (en) * 2009-06-04 2012-01-30 Merck Patent Gmbh Two component etching
US20180148859A1 (en) * 2015-04-22 2018-05-31 Nissan Chemical Industries, Ltd. Photosensitive fibers and method for forming fiber pattern
JP6702251B2 (ja) 2017-04-17 2020-05-27 信越化学工業株式会社 ポジ型レジストフィルム積層体及びパターン形成方法
KR102146095B1 (ko) 2017-09-15 2020-08-19 주식회사 엘지화학 화학증폭형 포토레지스트 조성물, 포토레지스트 패턴, 및 포토레지스트 패턴 제조방법
SG11202011800YA (en) * 2018-06-22 2021-01-28 Merck Patent Gmbh A photoresist composition, a method for manufacturing a photoresist coating, etched photoresist coating, and etched si containing layer(s), and manufacturing a device using thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0743501B2 (ja) * 1986-04-24 1995-05-15 富士写真フイルム株式会社 ポジ型感光性平版印刷版
JP2539664B2 (ja) * 1988-05-31 1996-10-02 コニカ株式会社 感光性平版印刷版
JP2739382B2 (ja) * 1990-12-06 1998-04-15 富士写真フイルム株式会社 平版印刷版の製造方法
GB9722862D0 (en) * 1997-10-29 1997-12-24 Horsell Graphic Ind Ltd Pattern formation
JP2000275830A (ja) * 1999-03-25 2000-10-06 Mitsubishi Chemicals Corp 光重合性組成物、画像形成材料及び感光性平版印刷版
JP3802732B2 (ja) * 2000-05-12 2006-07-26 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP3458096B2 (ja) * 2000-08-11 2003-10-20 株式会社半導体先端テクノロジーズ レジスト組成物、及び半導体装置の製造方法
WO2003034152A1 (fr) * 2001-10-10 2003-04-24 Nissan Chemical Industries, Ltd. Composition de formation d'un film antireflet pour lithographie
JP3933459B2 (ja) * 2001-12-14 2007-06-20 旭化成エレクトロニクス株式会社 感光性樹脂組成物及び積層体

Also Published As

Publication number Publication date
CN1853138A (zh) 2006-10-25
KR101073417B1 (ko) 2011-10-17
JPWO2005036268A1 (ja) 2007-11-22
WO2005036268A1 (ja) 2005-04-21
KR20070017962A (ko) 2007-02-13
TW200517779A (en) 2005-06-01
TWI346836B (en) 2011-08-11
CN1853138B (zh) 2011-06-15

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