TW200517779A - Photoresist composition - Google Patents

Photoresist composition

Info

Publication number
TW200517779A
TW200517779A TW093130888A TW93130888A TW200517779A TW 200517779 A TW200517779 A TW 200517779A TW 093130888 A TW093130888 A TW 093130888A TW 93130888 A TW93130888 A TW 93130888A TW 200517779 A TW200517779 A TW 200517779A
Authority
TW
Taiwan
Prior art keywords
photoresist composition
larger
hydroxy groups
polyetherester
polyol
Prior art date
Application number
TW093130888A
Other languages
Chinese (zh)
Other versions
TWI346836B (en
Inventor
Masaki Hosaka
Masatoshi Homma
Original Assignee
Asahi Denka Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Denka Co Ltd filed Critical Asahi Denka Co Ltd
Publication of TW200517779A publication Critical patent/TW200517779A/en
Application granted granted Critical
Publication of TWI346836B publication Critical patent/TWI346836B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Polyethers (AREA)

Abstract

This invention relates to a photoresist composition. It possesses the characteristic that comprises a polyetherester, and a photoresist composition. The polyetherester (A) represented by the general formula (1):[RCOO(AO)a]mX[O(AO')bH]n. Wherein, RCO represents the residue formed by removing the hydroxy group from a C6-C22 fatty acid. X represents the residue formed by removing the hydroxy groups from a polyol with at least three hydroxy groups. AO and AO' are represent C2-C4 oxyalkylene. In addition, a is 0, or a number of 1 or larger, b is a number of 1 or larger. And, m and n are a number of 1 or larger. However, the sum of m and n is the same as the number of hydroxy groups contained in the polyol. The photoresist composition (B) possesses an alkali-soluble resin with anionic groups or a modification of the resin as an ingredient.
TW093130888A 2003-10-14 2004-10-12 Photoresist composition TWI346836B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003353720 2003-10-14

Publications (2)

Publication Number Publication Date
TW200517779A true TW200517779A (en) 2005-06-01
TWI346836B TWI346836B (en) 2011-08-11

Family

ID=34431168

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093130888A TWI346836B (en) 2003-10-14 2004-10-12 Photoresist composition

Country Status (5)

Country Link
JP (1) JP4673222B2 (en)
KR (1) KR101073417B1 (en)
CN (1) CN1853138B (en)
TW (1) TWI346836B (en)
WO (1) WO2005036268A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7601482B2 (en) * 2006-03-28 2009-10-13 Az Electronic Materials Usa Corp. Negative photoresist compositions
JP5801798B2 (en) * 2009-06-04 2015-10-28 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ Two component etching
CN107532337A (en) * 2015-04-22 2018-01-02 日产化学工业株式会社 The forming method of photonasty fiber and fiber pattern
JP6702251B2 (en) 2017-04-17 2020-05-27 信越化学工業株式会社 Positive resist film laminate and pattern forming method
KR102146095B1 (en) 2017-09-15 2020-08-19 주식회사 엘지화학 Photoacid generator and photoresist composition for thick layer comprising the same
CN112292637A (en) * 2018-06-22 2021-01-29 默克专利有限公司 Photoresist composition, methods for producing photoresist coating, etched photoresist coating, and etched silicon-containing layer, and method for producing device using the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0743501B2 (en) * 1986-04-24 1995-05-15 富士写真フイルム株式会社 Positive photosensitive lithographic printing plate
JP2539664B2 (en) * 1988-05-31 1996-10-02 コニカ株式会社 Photosensitive lithographic printing plate
JP2739382B2 (en) * 1990-12-06 1998-04-15 富士写真フイルム株式会社 Lithographic printing plate manufacturing method
GB9722862D0 (en) * 1997-10-29 1997-12-24 Horsell Graphic Ind Ltd Pattern formation
JP2000275830A (en) * 1999-03-25 2000-10-06 Mitsubishi Chemicals Corp Photopolymerizable composition, image forming material and photosensitive planographic printing plate
JP3802732B2 (en) * 2000-05-12 2006-07-26 信越化学工業株式会社 Resist material and pattern forming method
JP3458096B2 (en) * 2000-08-11 2003-10-20 株式会社半導体先端テクノロジーズ Resist composition and method for manufacturing semiconductor device
US7425347B2 (en) * 2001-10-10 2008-09-16 Nissan Chemical Industries, Ltd Composition for forming anti-reflective coating for use in lithography
JP3933459B2 (en) * 2001-12-14 2007-06-20 旭化成エレクトロニクス株式会社 Photosensitive resin composition and laminate

Also Published As

Publication number Publication date
JPWO2005036268A1 (en) 2007-11-22
JP4673222B2 (en) 2011-04-20
KR20070017962A (en) 2007-02-13
TWI346836B (en) 2011-08-11
KR101073417B1 (en) 2011-10-17
WO2005036268A1 (en) 2005-04-21
CN1853138B (en) 2011-06-15
CN1853138A (en) 2006-10-25

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees