JP4670177B2 - 強誘電体型不揮発性半導体メモリ及びその駆動方法 - Google Patents

強誘電体型不揮発性半導体メモリ及びその駆動方法 Download PDF

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Publication number
JP4670177B2
JP4670177B2 JP2001147475A JP2001147475A JP4670177B2 JP 4670177 B2 JP4670177 B2 JP 4670177B2 JP 2001147475 A JP2001147475 A JP 2001147475A JP 2001147475 A JP2001147475 A JP 2001147475A JP 4670177 B2 JP4670177 B2 JP 4670177B2
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Japan
Prior art keywords
memory
electrode
memory cell
bit line
memory unit
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JP2001147475A
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Japanese (ja)
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JP2002197857A (ja
JP2002197857A5 (enExample
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利幸 西原
浩司 渡部
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Sony Corp
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Sony Corp
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JP2001147475A 2000-05-26 2001-05-17 強誘電体型不揮発性半導体メモリ及びその駆動方法 Expired - Fee Related JP4670177B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001147475A JP4670177B2 (ja) 2000-05-26 2001-05-17 強誘電体型不揮発性半導体メモリ及びその駆動方法

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP2000-156089 2000-05-26
JP2000156089 2000-05-26
JP2000247143 2000-08-17
JP2000-247143 2000-08-17
JP2000252080 2000-08-23
JP2000-252080 2000-08-23
JP2000262755 2000-08-31
JP2000-262755 2000-08-31
JP2000-317880 2000-10-18
JP2000317880 2000-10-18
JP2001147475A JP4670177B2 (ja) 2000-05-26 2001-05-17 強誘電体型不揮発性半導体メモリ及びその駆動方法

Publications (3)

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JP2002197857A JP2002197857A (ja) 2002-07-12
JP2002197857A5 JP2002197857A5 (enExample) 2008-03-06
JP4670177B2 true JP4670177B2 (ja) 2011-04-13

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JP2001147475A Expired - Fee Related JP4670177B2 (ja) 2000-05-26 2001-05-17 強誘電体型不揮発性半導体メモリ及びその駆動方法

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JP (1) JP4670177B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4172278B2 (ja) * 2003-01-27 2008-10-29 ソニー株式会社 半導体記憶装置
JP3988696B2 (ja) 2003-03-27 2007-10-10 ソニー株式会社 データ読出方法及び半導体記憶装置
US7291878B2 (en) * 2003-06-03 2007-11-06 Hitachi Global Storage Technologies Netherlands B.V. Ultra low-cost solid-state memory
JP2005136071A (ja) 2003-10-29 2005-05-26 Seiko Epson Corp クロスポイント型強誘電体メモリ
JP2007058940A (ja) 2005-08-22 2007-03-08 Sony Corp 記憶装置、ファイル記憶装置、およびコンピュータシステム
GB2436893A (en) * 2006-03-31 2007-10-10 Seiko Epson Corp Inkjet printing of cross point passive matrix devices
JP5010192B2 (ja) 2006-06-22 2012-08-29 株式会社東芝 不揮発性半導体記憶装置
WO2010103609A1 (ja) 2009-03-09 2010-09-16 株式会社 東芝 情報記録再生装置
TWI691960B (zh) * 2010-10-05 2020-04-21 日商半導體能源研究所股份有限公司 半導體記憶體裝置及其驅動方法
KR101530782B1 (ko) 2013-12-03 2015-06-22 연세대학교 산학협력단 영상 부호화 및 복호화 방법, 장치 및 시스템
US20240013829A1 (en) * 2020-11-20 2024-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3169599B2 (ja) * 1990-08-03 2001-05-28 株式会社日立製作所 半導体装置、その駆動方法、その読み出し方法
JPH07235648A (ja) * 1994-02-24 1995-09-05 Hitachi Ltd 半導体記憶装置
JP3327071B2 (ja) * 1995-10-16 2002-09-24 ソニー株式会社 強誘電体記憶装置

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JP2002197857A (ja) 2002-07-12

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