JP4670121B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4670121B2
JP4670121B2 JP23320099A JP23320099A JP4670121B2 JP 4670121 B2 JP4670121 B2 JP 4670121B2 JP 23320099 A JP23320099 A JP 23320099A JP 23320099 A JP23320099 A JP 23320099A JP 4670121 B2 JP4670121 B2 JP 4670121B2
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JP
Japan
Prior art keywords
gate
region
layer
gate electrode
drain
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Expired - Fee Related
Application number
JP23320099A
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English (en)
Japanese (ja)
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JP2001060684A (ja
JP2001060684A5 (enExample
Inventor
直紀 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
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Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23320099A priority Critical patent/JP4670121B2/ja
Priority to US09/639,096 priority patent/US6507051B1/en
Publication of JP2001060684A publication Critical patent/JP2001060684A/ja
Publication of JP2001060684A5 publication Critical patent/JP2001060684A5/ja
Application granted granted Critical
Publication of JP4670121B2 publication Critical patent/JP4670121B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
JP23320099A 1999-08-19 1999-08-19 半導体装置 Expired - Fee Related JP4670121B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP23320099A JP4670121B2 (ja) 1999-08-19 1999-08-19 半導体装置
US09/639,096 US6507051B1 (en) 1999-08-19 2000-08-16 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23320099A JP4670121B2 (ja) 1999-08-19 1999-08-19 半導体装置

Publications (3)

Publication Number Publication Date
JP2001060684A JP2001060684A (ja) 2001-03-06
JP2001060684A5 JP2001060684A5 (enExample) 2006-09-21
JP4670121B2 true JP4670121B2 (ja) 2011-04-13

Family

ID=16951326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23320099A Expired - Fee Related JP4670121B2 (ja) 1999-08-19 1999-08-19 半導体装置

Country Status (2)

Country Link
US (1) US6507051B1 (enExample)
JP (1) JP4670121B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8174048B2 (en) * 2004-01-23 2012-05-08 International Rectifier Corporation III-nitride current control device and method of manufacture
US7015519B2 (en) * 2004-02-20 2006-03-21 Anadigics, Inc. Structures and methods for fabricating vertically integrated HBT/FET device
JP5214094B2 (ja) * 2005-03-07 2013-06-19 富士通株式会社 電界効果型トランジスタとその製造方法
JP2007194588A (ja) * 2005-12-20 2007-08-02 Sony Corp 電界効果トランジスタ及びこの電界効果トランジスタを備えた半導体装置並びに半導体装置の製造方法
JP5200323B2 (ja) * 2005-12-22 2013-06-05 三菱電機株式会社 高周波半導体装置
JP5512287B2 (ja) * 2007-02-22 2014-06-04 フォルシュングスフェアブント ベルリン エー ファウ 半導体素子およびその製造方法
US9024327B2 (en) 2007-12-14 2015-05-05 Cree, Inc. Metallization structure for high power microelectronic devices
JP5170885B2 (ja) * 2008-03-31 2013-03-27 古河電気工業株式会社 電界効果トランジスタ及びその製造方法
KR100985470B1 (ko) 2008-04-18 2010-10-06 고려대학교 산학협력단 고 전자 이동도 트랜지스터 및 그 제조방법
JP5629977B2 (ja) * 2009-04-10 2014-11-26 日本電気株式会社 半導体装置及びその製造方法
US9136364B2 (en) * 2009-09-16 2015-09-15 Power Integrations, Inc. Field effect transistor with access region recharge
JP5638225B2 (ja) * 2009-11-11 2014-12-10 三菱電機株式会社 へテロ接合電界効果トランジスタ及びその製造方法
US9368622B1 (en) * 2010-06-04 2016-06-14 Hrl Laboratories, Llc Stitched gate GaN HEMTs
JP5790461B2 (ja) 2011-12-07 2015-10-07 富士通株式会社 化合物半導体装置及びその製造方法
US9245879B2 (en) 2012-06-29 2016-01-26 Power Integrations, Inc. Static discharge system
US10192981B2 (en) 2012-06-29 2019-01-29 Power Integrations, Inc. Switching device with charge distribution structure
US10388746B2 (en) * 2017-07-06 2019-08-20 Teledyne Scientific & Imaging, Llc FET with buried gate structure
US11476359B2 (en) * 2019-03-18 2022-10-18 Wolfspeed, Inc. Structures for reducing electron concentration and process for reducing electron concentration
CN115668506A (zh) * 2020-05-25 2023-01-31 索尼半导体解决方案公司 半导体装置、半导体模块和电子设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0196966A (ja) * 1987-10-09 1989-04-14 Mitsubishi Electric Corp 電界効果トランジスタ
JP2659065B2 (ja) * 1988-03-25 1997-09-30 株式会社日立製作所 半導体装置
JPH022179A (ja) * 1988-06-13 1990-01-08 Fujitsu Ltd メタル・セミコンダクタ・ｆｅｔ
JP2626219B2 (ja) * 1990-09-17 1997-07-02 日本電気株式会社 半導体装置
US5304825A (en) * 1992-08-20 1994-04-19 Motorola, Inc. Linear heterojunction field effect transistor
JPH07176761A (ja) * 1993-12-20 1995-07-14 Nec Corp 電界効果トランジスタ
JPH1092845A (ja) * 1996-09-13 1998-04-10 Toshiba Corp 電界効果トランジスタ
JPH10178024A (ja) * 1996-12-18 1998-06-30 Matsushita Electric Ind Co Ltd 電界効果型トランジスタ及びその製造方法
JP3214453B2 (ja) * 1998-08-04 2001-10-02 日本電気株式会社 電界効果トランジスタおよびその製造方法

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Publication number Publication date
JP2001060684A (ja) 2001-03-06
US6507051B1 (en) 2003-01-14

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