JP4666999B2 - 配線及び薄膜トランジスタの作製方法 - Google Patents

配線及び薄膜トランジスタの作製方法 Download PDF

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Publication number
JP4666999B2
JP4666999B2 JP2004311157A JP2004311157A JP4666999B2 JP 4666999 B2 JP4666999 B2 JP 4666999B2 JP 2004311157 A JP2004311157 A JP 2004311157A JP 2004311157 A JP2004311157 A JP 2004311157A JP 4666999 B2 JP4666999 B2 JP 4666999B2
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electrode
film
treatment
lyophilic
substrate
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Expired - Fee Related
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JP2004311157A
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Japanese (ja)
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JP2005159327A (ja
JP2005159327A5 (enrdf_load_stackoverflow
Inventor
慎志 前川
舜平 山崎
孝司 村中
祐子 舘村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2004311157A 2003-10-28 2004-10-26 配線及び薄膜トランジスタの作製方法 Expired - Fee Related JP4666999B2 (ja)

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JP2004311157A JP4666999B2 (ja) 2003-10-28 2004-10-26 配線及び薄膜トランジスタの作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003368038 2003-10-28
JP2004311157A JP4666999B2 (ja) 2003-10-28 2004-10-26 配線及び薄膜トランジスタの作製方法

Publications (3)

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JP2005159327A JP2005159327A (ja) 2005-06-16
JP2005159327A5 JP2005159327A5 (enrdf_load_stackoverflow) 2006-08-17
JP4666999B2 true JP4666999B2 (ja) 2011-04-06

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JP (1) JP4666999B2 (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4708998B2 (ja) * 2005-12-22 2011-06-22 キヤノン株式会社 パターニング方法、電気光学装置の製造方法、カラーフィルターの製造方法、発光体の製造方法、並びに薄膜トランジスタの製造方法
JP4802761B2 (ja) * 2006-02-27 2011-10-26 凸版印刷株式会社 印刷物の製造方法
JP2007237413A (ja) * 2006-03-06 2007-09-20 Toppan Printing Co Ltd 印刷物の製造方法
JP4929793B2 (ja) * 2006-03-31 2012-05-09 凸版印刷株式会社 印刷物の製造方法
JP4565573B2 (ja) * 2006-09-07 2010-10-20 株式会社フューチャービジョン 液晶表示パネルの製造方法
US7646015B2 (en) 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP5210594B2 (ja) * 2006-10-31 2013-06-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2009272511A (ja) * 2008-05-09 2009-11-19 Mimaki Engineering Co Ltd 配線形成装置及び配線形成方法
JP5444725B2 (ja) * 2009-01-21 2014-03-19 株式会社リコー 積層構造体及び積層構造体の製造方法
JP5448639B2 (ja) * 2009-08-19 2014-03-19 ローランドディー．ジー．株式会社 電子回路基板の製造装置
JP5566800B2 (ja) * 2010-07-08 2014-08-06 シャープ株式会社 塗布膜形成方法
JP5685467B2 (ja) 2010-09-16 2015-03-18 富士フイルム株式会社 パターン形成方法及びパターン形成装置
JP6939445B2 (ja) * 2017-11-10 2021-09-22 コニカミノルタ株式会社 有機エレクトロルミネッセンスデバイス、その製造方法及び画像表示装置
CN111211237A (zh) * 2018-11-21 2020-05-29 陕西坤同半导体科技有限公司 薄膜封装结构及薄膜封装方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3093224B2 (ja) * 1989-11-24 2000-10-03 日本電気株式会社 半導体装置
GB9930217D0 (en) * 1999-12-21 2000-02-09 Univ Cambridge Tech Solutiion processed transistors
JP3951044B2 (ja) * 2002-03-13 2007-08-01 セイコーエプソン株式会社 成膜方法、並びにその方法を用いて製造したデバイス

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JP2005159327A (ja) 2005-06-16

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