JP4666859B2 - 水処理可能なフォトレジスト組成物 - Google Patents

水処理可能なフォトレジスト組成物 Download PDF

Info

Publication number
JP4666859B2
JP4666859B2 JP2001517217A JP2001517217A JP4666859B2 JP 4666859 B2 JP4666859 B2 JP 4666859B2 JP 2001517217 A JP2001517217 A JP 2001517217A JP 2001517217 A JP2001517217 A JP 2001517217A JP 4666859 B2 JP4666859 B2 JP 4666859B2
Authority
JP
Japan
Prior art keywords
water
polymer
acid
composition
carboxylic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001517217A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003507759A5 (enExample
JP2003507759A (ja
Inventor
シンタロウ ヤマダ
ティモ レイジャー
シー グラント ウィルソン
Original Assignee
インテレクチュアル ヴェンチャーズ ホールディング ４０ リミテッド ライアビリティ カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by インテレクチュアル ヴェンチャーズ ホールディング ４０ リミテッド ライアビリティ カンパニー filed Critical インテレクチュアル ヴェンチャーズ ホールディング ４０ リミテッド ライアビリティ カンパニー
Publication of JP2003507759A publication Critical patent/JP2003507759A/ja
Publication of JP2003507759A5 publication Critical patent/JP2003507759A5/ja
Application granted granted Critical
Publication of JP4666859B2 publication Critical patent/JP4666859B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C08F212/24—Phenols or alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/12—Hydrolysis
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2800/00—Copolymer characterised by the proportions of the comonomers expressed
    • C08F2800/10—Copolymer characterised by the proportions of the comonomers expressed as molar percentages
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2800/00—Copolymer characterised by the proportions of the comonomers expressed
    • C08F2800/20—Copolymer characterised by the proportions of the comonomers expressed as weight or mass percentages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)
JP2001517217A 1999-08-13 2000-08-14 水処理可能なフォトレジスト組成物 Expired - Fee Related JP4666859B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14883699P 1999-08-13 1999-08-13
US60/148,836 1999-08-13
US14962299P 1999-08-16 1999-08-16
US60/149,622 1999-08-16
PCT/US2000/022314 WO2001013179A1 (en) 1999-08-13 2000-08-14 Water-processable photoresist compositions

Publications (3)

Publication Number Publication Date
JP2003507759A JP2003507759A (ja) 2003-02-25
JP2003507759A5 JP2003507759A5 (enExample) 2007-09-20
JP4666859B2 true JP4666859B2 (ja) 2011-04-06

Family

ID=26846216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001517217A Expired - Fee Related JP4666859B2 (ja) 1999-08-13 2000-08-14 水処理可能なフォトレジスト組成物

Country Status (4)

Country Link
US (1) US6399273B1 (enExample)
EP (1) EP1240552B1 (enExample)
JP (1) JP4666859B2 (enExample)
WO (1) WO2001013179A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002069039A2 (en) * 2001-02-25 2002-09-06 Shipley Company, L.L.C. Photoacid generator systems for short wavelength imaging
TWI317365B (en) * 2002-07-31 2009-11-21 Jsr Corp Acenaphthylene derivative, polymer, and antireflection film-forming composition
US7090963B2 (en) * 2003-06-25 2006-08-15 International Business Machines Corporation Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging
KR100680425B1 (ko) 2004-06-18 2007-02-08 주식회사 하이닉스반도체 수용성 네가티브 포토레지스트 중합체 및 이를 포함하는조성물
US7399570B2 (en) * 2004-06-18 2008-07-15 Hynix Semiconductor Inc. Water-soluble negative photoresist polymer and composition containing the same
KR100682165B1 (ko) 2004-06-18 2007-02-12 주식회사 하이닉스반도체 수용성 네가티브 포토레지스트 중합체 및 이를 포함하는조성물
TW200715067A (en) 2005-09-06 2007-04-16 Koninkl Philips Electronics Nv Lithographic method
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US7300741B2 (en) * 2006-04-25 2007-11-27 International Business Machines Corporation Advanced chemically amplified resist for sub 30 nm dense feature resolution
US20070287766A1 (en) * 2006-06-08 2007-12-13 International Business Machines Corporation Easily removable uv degradable paint and process for applying the same
EP1906249A3 (en) * 2006-09-26 2008-12-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective coating compositions for photolithography
US7785983B2 (en) * 2007-03-07 2010-08-31 Freescale Semiconductor, Inc. Semiconductor device having tiles for dual-trench integration and method therefor
WO2009073702A1 (en) * 2007-12-04 2009-06-11 E. I. Du Pont De Nemours And Company Decarboxylating block copolymers
TWI450052B (zh) * 2008-06-24 2014-08-21 Dynaloy Llc 用於後段製程操作有效之剝離溶液
US7951525B2 (en) * 2008-09-08 2011-05-31 International Business Machines Corporation Low outgassing photoresist compositions
US8987181B2 (en) 2011-11-08 2015-03-24 Dynaloy, Llc Photoresist and post etch residue cleaning solution
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
US9029268B2 (en) 2012-11-21 2015-05-12 Dynaloy, Llc Process for etching metals
EP3304197A4 (en) 2015-06-04 2019-01-23 Kateeva, Inc. METHOD FOR PRODUCING AN ESTETRESIST PATTERN ON A METALLIC SURFACE
US10806035B2 (en) 2015-08-13 2020-10-13 Kateeva, Inc. Methods for producing an etch resist pattern on a metallic surface
US10398034B2 (en) 2016-12-12 2019-08-27 Kateeva, Inc. Methods of etching conductive features, and related devices and systems

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5071731A (en) * 1990-04-10 1991-12-10 E. I. Du Pont De Nemours And Company Aqueous processable photosensitive element with an elastomeric layer
US5496678A (en) 1993-04-16 1996-03-05 Kansai Paint Co., Ltd. Photosensitive compositions containing a polymer with carboxyl and hydroxyphenyl groups, a compound with multiple ethylenic unsaturation and a photo-acid generator
JPH08240907A (ja) * 1995-03-06 1996-09-17 Hitachi Ltd レジスト組成物およびそれを用いたパタン形成方法
US5648196A (en) * 1995-07-14 1997-07-15 Cornell Research Foundation, Inc. Water-soluble photoinitiators
KR0164981B1 (ko) 1995-11-28 1999-03-20 김흥기 아세탈기를 함유하는 알콕시-스틸렌 중합체와 그의 제조방법 및 알콕시-스틸렌 중합체를 주요 구성성분으로 하는 화학증폭형 포토레지스트 재료
JP3383564B2 (ja) * 1997-12-26 2003-03-04 株式会社東芝 パターン形成方法および感光性組成物
KR19990081722A (ko) * 1998-04-30 1999-11-15 김영환 카르복실기 함유 지환족 유도체 및 그의 제조방법
US5998092A (en) 1998-05-27 1999-12-07 Clariant International, Ltd. Water soluble negative-working photoresist composition
US6060212A (en) 1998-06-11 2000-05-09 Clariant Finance (Bvi) Limited 193 nm positive-working photoresist composition
DE69904223T2 (de) * 1998-07-23 2003-08-28 Clariant Finance (Bvi) Ltd., Road Town Wasserlösliche positiv arbeitende photoresistzusammensetzung
US6242155B1 (en) * 1998-08-14 2001-06-05 Fuji Photo Film Co., Ltd. Method of making lithographic printing plate and photopolymer composition

Also Published As

Publication number Publication date
US6399273B1 (en) 2002-06-04
WO2001013179A1 (en) 2001-02-22
JP2003507759A (ja) 2003-02-25
EP1240552B1 (en) 2012-09-19
EP1240552A4 (en) 2007-10-17
EP1240552A1 (en) 2002-09-18

Similar Documents

Publication Publication Date Title
JP4666859B2 (ja) 水処理可能なフォトレジスト組成物
KR100301354B1 (ko) 레지스트조성물및레지스트패턴형성방법
KR100588369B1 (ko) 에너지감응성내식막재료및이를사용하는디바이스의제조방법
JP4270708B2 (ja) ケイ素含有ポリマ、その製造方法、それを用いたレジスト組成物、パターン形成方法および電子デバイスの製造方法
JP5243390B2 (ja) レジスト用重合体、レジスト組成物、および、パターン形成方法
US6329125B2 (en) Chemically amplified resist compositions and process for the formation of resist patterns
JP3297272B2 (ja) レジスト組成物及びレジストパターンの形成方法
KR100668470B1 (ko) 오늄염계 산발생제를 포함하는 화학 증폭형 방사선 민감성 조성물
KR100206664B1 (ko) 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법
TWI245161B (en) Novel onium salts, photoacid generators, resist compositions, and patterning process
KR100242224B1 (ko) 레지스트 조성물, 레지스트 패턴의 형성 방법 및 반도체 장치의 제조 방법
KR100526736B1 (ko) 락톤 구조를 갖는 (메트)아크릴레이트 화합물, 그의중합체, 레지스트 재료 및 패턴 형성 방법
US5648196A (en) Water-soluble photoinitiators
KR100292406B1 (ko) 감광성중합체,용해억제제및이들을포함하는화학증폭형포토레지스트조성물
US6235447B1 (en) Photoresist monomers, polymers thereof, and photoresist compositions containing the same
JP2907144B2 (ja) 酸誘導体化合物、高分子化合物、それを用いた感光性樹脂組成物およびパターン形成方法
JPH1184663A (ja) 感光性組成物、およびこれを用いたパターン形成方法ならびに電子部品の製造方法
EP0778495A1 (en) Resist composition with radiation sensitive acid generator
KR100202762B1 (ko) 알카리 현상을 위한 레지스트
TWI493290B (zh) 低釋氣性光阻組合物
JPH07312331A (ja) フォトレジストイメージ形成プロセスおよび集積回路
JPH05262874A (ja) 酸に対して不安定な保護基を有するオリゴマー化合物、およびこの化合物を用いて製造したポジ型放射線感応性混合物
JP2008111120A (ja) スルホニル基を含むフォトレジストモノマー、ポリマー及びこれを含むフォトレジスト組成物
JP4080916B2 (ja) 化学増幅レジスト用コポリマー
WO2022196258A1 (ja) オニウム塩、光酸発生剤、組成物及びそれを用いたデバイスの製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070730

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070730

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20080716

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20080716

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091221

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100323

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100419

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20100420

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100716

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100726

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100816

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100823

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100921

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100929

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101018

TRDD Decision of grant or rejection written
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101102

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101215

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140121

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees