JP4665333B2 - ポジ型感光性樹脂前駆体組成物 - Google Patents

ポジ型感光性樹脂前駆体組成物 Download PDF

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Publication number
JP4665333B2
JP4665333B2 JP2001122334A JP2001122334A JP4665333B2 JP 4665333 B2 JP4665333 B2 JP 4665333B2 JP 2001122334 A JP2001122334 A JP 2001122334A JP 2001122334 A JP2001122334 A JP 2001122334A JP 4665333 B2 JP4665333 B2 JP 4665333B2
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JP
Japan
Prior art keywords
group
compound
general formula
carbon atoms
varnish
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Expired - Lifetime
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JP2001122334A
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English (en)
Japanese (ja)
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JP2002221794A (ja
JP2002221794A5 (enExample
Inventor
充史 諏訪
一登 三好
真佐夫 富川
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Toray Industries Inc
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Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP2001122334A priority Critical patent/JP4665333B2/ja
Priority to US09/985,059 priority patent/US6593043B2/en
Priority to EP01127075.8A priority patent/EP1209523B1/en
Priority to TW90129112A priority patent/TW573216B/zh
Priority to KR1020010073741A priority patent/KR100788537B1/ko
Priority to CNB011394781A priority patent/CN1246389C/zh
Publication of JP2002221794A publication Critical patent/JP2002221794A/ja
Publication of JP2002221794A5 publication Critical patent/JP2002221794A5/ja
Application granted granted Critical
Publication of JP4665333B2 publication Critical patent/JP4665333B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2001122334A 2000-11-27 2001-04-20 ポジ型感光性樹脂前駆体組成物 Expired - Lifetime JP4665333B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001122334A JP4665333B2 (ja) 2000-11-27 2001-04-20 ポジ型感光性樹脂前駆体組成物
US09/985,059 US6593043B2 (en) 2000-11-27 2001-11-01 Composition of positive photosensitive resin precursor, and display device thereof
EP01127075.8A EP1209523B1 (en) 2000-11-27 2001-11-14 Composition of positive photosensitive resin precursor, and display device made thereof
TW90129112A TW573216B (en) 2000-11-27 2001-11-23 Composition of positive photosensitive resin precursor, and display device thereof
KR1020010073741A KR100788537B1 (ko) 2000-11-27 2001-11-26 포지티브형 감광성 수지 전구체 조성물 및 그것을 이용한표시 장치
CNB011394781A CN1246389C (zh) 2000-11-27 2001-11-27 正型感光性树脂前驱体组合物及使用其的显示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-359401 2000-11-27
JP2000359401 2000-11-27
JP2001122334A JP4665333B2 (ja) 2000-11-27 2001-04-20 ポジ型感光性樹脂前駆体組成物

Publications (3)

Publication Number Publication Date
JP2002221794A JP2002221794A (ja) 2002-08-09
JP2002221794A5 JP2002221794A5 (enExample) 2008-05-29
JP4665333B2 true JP4665333B2 (ja) 2011-04-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001122334A Expired - Lifetime JP4665333B2 (ja) 2000-11-27 2001-04-20 ポジ型感光性樹脂前駆体組成物

Country Status (6)

Country Link
US (1) US6593043B2 (enExample)
EP (1) EP1209523B1 (enExample)
JP (1) JP4665333B2 (enExample)
KR (1) KR100788537B1 (enExample)
CN (1) CN1246389C (enExample)
TW (1) TW573216B (enExample)

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JP4799740B2 (ja) * 2001-01-17 2011-10-26 日東電工株式会社 配線回路基板用樹脂組成物、配線回路基板用基材および配線回路基板
TW574620B (en) * 2001-02-26 2004-02-01 Toray Industries Precursor composition of positive photosensitive resin and display device using it
US7015256B2 (en) * 2002-01-28 2006-03-21 Jsr Corporation Composition for forming photosensitive dielectric material, and transfer film, dielectric material and electronic parts using the same
KR100943375B1 (ko) * 2002-05-29 2010-02-18 도레이 카부시키가이샤 감광성 수지 조성물 및 내열성 수지막의 제조 방법
US6887643B2 (en) 2002-08-05 2005-05-03 Toray Industries, Inc. Photosensitive resin precursor composition
JP4360168B2 (ja) * 2002-10-01 2009-11-11 東レ株式会社 ポジ型感光性樹脂組成物
US20040238846A1 (en) * 2003-05-30 2004-12-02 Georg Wittmann Organic electronic device
US7476476B2 (en) * 2003-06-02 2009-01-13 Toray Industries, Inc. Photosensitive resin composition, electronic component using the same, and display unit using the same
TWI360565B (en) * 2003-07-09 2012-03-21 Toray Industries Photosensitive resin precursor composition
JP4591351B2 (ja) * 2003-07-28 2010-12-01 日産化学工業株式会社 ポジ型感光性樹脂組成物
TWI363249B (en) * 2003-10-15 2012-05-01 Fujifilm Electronic Materials Novel photosensitive resin compositions
JP2005309032A (ja) * 2004-04-21 2005-11-04 Toray Ind Inc ポジ型感光性樹脂組成物
EP1662319A3 (en) * 2004-11-24 2009-05-27 Toray Industries, Inc. Photosensitive resin composition
KR100787352B1 (ko) * 2005-02-23 2007-12-18 주식회사 하이닉스반도체 하드마스크용 조성물 및 이를 이용한 반도체 소자의 패턴형성 방법
US8092861B2 (en) * 2007-09-05 2012-01-10 United Microelectronics Corp. Method of fabricating an ultra dielectric constant (K) dielectric layer
KR100914063B1 (ko) * 2007-11-30 2009-08-28 제일모직주식회사 포지티브형 감광성 수지 조성물
KR100914064B1 (ko) * 2008-03-19 2009-08-28 제일모직주식회사 포지티브형 감광성 수지 조성물
CN102016718B (zh) * 2008-05-07 2013-10-16 住友电木株式会社 正型感光性树脂组合物、固化膜、保护膜和绝缘膜以及使用它们的半导体装置和显示装置
KR101023089B1 (ko) * 2008-09-29 2011-03-24 제일모직주식회사 포지티브형 감광성 수지 조성물
WO2010041795A1 (en) * 2008-10-07 2010-04-15 Cheil Industries Inc. Positive photosensitive resin composition
KR101632965B1 (ko) * 2008-12-29 2016-06-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 박막 트랜지스터 기판의 제조 방법
KR101333698B1 (ko) * 2009-11-10 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101333704B1 (ko) * 2009-12-29 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
JP6048143B2 (ja) * 2010-03-15 2016-12-21 日産化学工業株式会社 ポリアミック酸エステルとポリアミック酸とを含有する液晶配向剤及び液晶配向膜
WO2011115077A1 (ja) * 2010-03-15 2011-09-22 日産化学工業株式会社 末端を修飾したポリアミック酸エステル含有液晶配向剤、及び液晶配向膜
WO2011139073A2 (ko) 2010-05-04 2011-11-10 주식회사 엘지화학 네가티브 포토레지스트 조성물 및 소자의 패터닝 방법
KR20120066923A (ko) 2010-12-15 2012-06-25 제일모직주식회사 신규 페놀 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물
KR101423539B1 (ko) 2010-12-20 2014-07-25 삼성전자 주식회사 포지티브형 감광성 수지 조성물
KR101400192B1 (ko) 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
KR101400186B1 (ko) 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
KR101600653B1 (ko) * 2012-12-26 2016-03-07 제일모직주식회사 봉지용 조성물, 이를 포함하는 장벽층 및 이를 포함하는 봉지화된 장치
KR102058651B1 (ko) 2013-02-27 2019-12-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 그를 이용한 표시 장치의 제조 방법
KR101700994B1 (ko) * 2013-07-01 2017-01-31 주식회사 엘지화학 광활성 물질의 분리방법
CN105659156B (zh) * 2013-10-23 2019-02-01 日产化学工业株式会社 液晶取向剂、液晶取向膜和液晶表示元件
US9477148B1 (en) 2015-05-26 2016-10-25 Industrial Technology Research Institute Polymer, method for preparing the same, and a photosensitive resin composition thereof
KR102313182B1 (ko) * 2018-01-29 2021-10-15 후지필름 가부시키가이샤 감광성 수지 조성물, 수지, 경화막, 적층체, 경화막의 제조 방법, 반도체 디바이스
CN115685681B (zh) 2021-07-27 2025-05-20 吉林奥来德光电材料股份有限公司 树脂组合物、树脂膜及显示器件
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Also Published As

Publication number Publication date
JP2002221794A (ja) 2002-08-09
CN1356356A (zh) 2002-07-03
CN1246389C (zh) 2006-03-22
US20020090564A1 (en) 2002-07-11
EP1209523A3 (en) 2003-09-24
TW573216B (en) 2004-01-21
EP1209523B1 (en) 2015-08-26
KR20020041302A (ko) 2002-06-01
US6593043B2 (en) 2003-07-15
EP1209523A2 (en) 2002-05-29
KR100788537B1 (ko) 2007-12-24

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