KR100788537B1 - 포지티브형 감광성 수지 전구체 조성물 및 그것을 이용한표시 장치 - Google Patents

포지티브형 감광성 수지 전구체 조성물 및 그것을 이용한표시 장치 Download PDF

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KR100788537B1
KR100788537B1 KR1020010073741A KR20010073741A KR100788537B1 KR 100788537 B1 KR100788537 B1 KR 100788537B1 KR 1020010073741 A KR1020010073741 A KR 1020010073741A KR 20010073741 A KR20010073741 A KR 20010073741A KR 100788537 B1 KR100788537 B1 KR 100788537B1
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South Korea
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group
formula
precursor composition
compound
photosensitive resin
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KR1020010073741A
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Korean (ko)
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KR20020041302A (ko
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미쯔히또 수와
가즈또 미요시
마사오 도미까와
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도레이 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020010073741A 2000-11-27 2001-11-26 포지티브형 감광성 수지 전구체 조성물 및 그것을 이용한표시 장치 Expired - Lifetime KR100788537B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00359401 2000-11-27
JP2000359401 2000-11-27
JPJP-P-2001-00122334 2001-04-20
JP2001122334A JP4665333B2 (ja) 2000-11-27 2001-04-20 ポジ型感光性樹脂前駆体組成物

Publications (2)

Publication Number Publication Date
KR20020041302A KR20020041302A (ko) 2002-06-01
KR100788537B1 true KR100788537B1 (ko) 2007-12-24

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Family Applications (1)

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KR1020010073741A Expired - Lifetime KR100788537B1 (ko) 2000-11-27 2001-11-26 포지티브형 감광성 수지 전구체 조성물 및 그것을 이용한표시 장치

Country Status (6)

Country Link
US (1) US6593043B2 (enExample)
EP (1) EP1209523B1 (enExample)
JP (1) JP4665333B2 (enExample)
KR (1) KR100788537B1 (enExample)
CN (1) CN1246389C (enExample)
TW (1) TW573216B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150003476A (ko) * 2013-07-01 2015-01-09 주식회사 엘지화학 광활성 물질의 분리방법

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4799740B2 (ja) * 2001-01-17 2011-10-26 日東電工株式会社 配線回路基板用樹脂組成物、配線回路基板用基材および配線回路基板
TW574620B (en) * 2001-02-26 2004-02-01 Toray Industries Precursor composition of positive photosensitive resin and display device using it
US7015256B2 (en) * 2002-01-28 2006-03-21 Jsr Corporation Composition for forming photosensitive dielectric material, and transfer film, dielectric material and electronic parts using the same
KR100943375B1 (ko) * 2002-05-29 2010-02-18 도레이 카부시키가이샤 감광성 수지 조성물 및 내열성 수지막의 제조 방법
US6887643B2 (en) 2002-08-05 2005-05-03 Toray Industries, Inc. Photosensitive resin precursor composition
JP4360168B2 (ja) * 2002-10-01 2009-11-11 東レ株式会社 ポジ型感光性樹脂組成物
US20040238846A1 (en) * 2003-05-30 2004-12-02 Georg Wittmann Organic electronic device
US7476476B2 (en) * 2003-06-02 2009-01-13 Toray Industries, Inc. Photosensitive resin composition, electronic component using the same, and display unit using the same
TWI360565B (en) * 2003-07-09 2012-03-21 Toray Industries Photosensitive resin precursor composition
JP4591351B2 (ja) * 2003-07-28 2010-12-01 日産化学工業株式会社 ポジ型感光性樹脂組成物
TWI363249B (en) * 2003-10-15 2012-05-01 Fujifilm Electronic Materials Novel photosensitive resin compositions
JP2005309032A (ja) * 2004-04-21 2005-11-04 Toray Ind Inc ポジ型感光性樹脂組成物
EP1662319A3 (en) * 2004-11-24 2009-05-27 Toray Industries, Inc. Photosensitive resin composition
KR100787352B1 (ko) * 2005-02-23 2007-12-18 주식회사 하이닉스반도체 하드마스크용 조성물 및 이를 이용한 반도체 소자의 패턴형성 방법
US8092861B2 (en) * 2007-09-05 2012-01-10 United Microelectronics Corp. Method of fabricating an ultra dielectric constant (K) dielectric layer
KR100914063B1 (ko) * 2007-11-30 2009-08-28 제일모직주식회사 포지티브형 감광성 수지 조성물
KR100914064B1 (ko) * 2008-03-19 2009-08-28 제일모직주식회사 포지티브형 감광성 수지 조성물
CN102016718B (zh) * 2008-05-07 2013-10-16 住友电木株式会社 正型感光性树脂组合物、固化膜、保护膜和绝缘膜以及使用它们的半导体装置和显示装置
KR101023089B1 (ko) * 2008-09-29 2011-03-24 제일모직주식회사 포지티브형 감광성 수지 조성물
WO2010041795A1 (en) * 2008-10-07 2010-04-15 Cheil Industries Inc. Positive photosensitive resin composition
KR101632965B1 (ko) * 2008-12-29 2016-06-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 박막 트랜지스터 기판의 제조 방법
KR101333698B1 (ko) * 2009-11-10 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101333704B1 (ko) * 2009-12-29 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
JP6048143B2 (ja) * 2010-03-15 2016-12-21 日産化学工業株式会社 ポリアミック酸エステルとポリアミック酸とを含有する液晶配向剤及び液晶配向膜
WO2011115077A1 (ja) * 2010-03-15 2011-09-22 日産化学工業株式会社 末端を修飾したポリアミック酸エステル含有液晶配向剤、及び液晶配向膜
WO2011139073A2 (ko) 2010-05-04 2011-11-10 주식회사 엘지화학 네가티브 포토레지스트 조성물 및 소자의 패터닝 방법
KR20120066923A (ko) 2010-12-15 2012-06-25 제일모직주식회사 신규 페놀 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물
KR101423539B1 (ko) 2010-12-20 2014-07-25 삼성전자 주식회사 포지티브형 감광성 수지 조성물
KR101400192B1 (ko) 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
KR101400186B1 (ko) 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
KR101600653B1 (ko) * 2012-12-26 2016-03-07 제일모직주식회사 봉지용 조성물, 이를 포함하는 장벽층 및 이를 포함하는 봉지화된 장치
KR102058651B1 (ko) 2013-02-27 2019-12-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 그를 이용한 표시 장치의 제조 방법
CN105659156B (zh) * 2013-10-23 2019-02-01 日产化学工业株式会社 液晶取向剂、液晶取向膜和液晶表示元件
US9477148B1 (en) 2015-05-26 2016-10-25 Industrial Technology Research Institute Polymer, method for preparing the same, and a photosensitive resin composition thereof
KR102313182B1 (ko) * 2018-01-29 2021-10-15 후지필름 가부시키가이샤 감광성 수지 조성물, 수지, 경화막, 적층체, 경화막의 제조 방법, 반도체 디바이스
CN115685681B (zh) 2021-07-27 2025-05-20 吉林奥来德光电材料股份有限公司 树脂组合物、树脂膜及显示器件
CN117897453A (zh) * 2021-08-18 2024-04-16 日东电工株式会社 聚酰亚胺前体组合物、聚酰亚胺树脂、以及电路基板
CN114316263B (zh) * 2022-01-17 2023-02-03 深圳职业技术学院 交联型聚酰胺酸酯、其制备方法、包含其的聚酰亚胺组合物及聚酰亚胺树脂膜的制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997031508A1 (en) * 1996-02-26 1997-08-28 Idemitsu Kosan Co., Ltd. Organic electroluminescent element and method for manufacturing the same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0478321B1 (en) * 1990-09-28 1997-11-12 Kabushiki Kaisha Toshiba Photosenstive resin composition for forming polyimide film pattern and method of forming polyimide film pattern
JP3064579B2 (ja) * 1991-01-17 2000-07-12 株式会社東芝 パターン形成方法
EP0512339B1 (de) * 1991-05-07 1997-10-15 Siemens Aktiengesellschaft Hochwärmebeständige Positivresists und Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen
KR0134753B1 (ko) * 1993-02-26 1998-04-18 사토 후미오 폴리아미드산 조성물
JP3460212B2 (ja) * 1994-08-12 2003-10-27 Ｊｓｒ株式会社 感放射線性樹脂組成物
JPH09319082A (ja) * 1996-05-27 1997-12-12 Hitachi Ltd ポジ型感光性樹脂組成物及びそれを用いた電子装置
JP4186250B2 (ja) * 1997-12-01 2008-11-26 東レ株式会社 感光性耐熱性樹脂前駆体組成物
US6376151B1 (en) * 1998-04-15 2002-04-23 Asahi Kasei Kabushiki Kaisha Positive resist composition
DE69922155T2 (de) * 1998-09-09 2005-12-08 Toray Industries, Inc. Vorläufer einer photoempfindlichen harzzusammensetzung und verfahren zu dessen herstellung
US6177225B1 (en) * 1998-10-01 2001-01-23 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
JP3426531B2 (ja) * 1998-10-30 2003-07-14 日立化成デュポンマイクロシステムズ株式会社 感光性重合体組成物、レリーフパターンの製造法及び電子部品
US6524764B1 (en) * 1999-06-01 2003-02-25 Toray Industries, Inc. Positive-type photosensitive polyimide precursor composition
JP4250841B2 (ja) * 1999-12-20 2009-04-08 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パタ−ンの製造法および電子部品
TW574620B (en) * 2001-02-26 2004-02-01 Toray Industries Precursor composition of positive photosensitive resin and display device using it

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997031508A1 (en) * 1996-02-26 1997-08-28 Idemitsu Kosan Co., Ltd. Organic electroluminescent element and method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150003476A (ko) * 2013-07-01 2015-01-09 주식회사 엘지화학 광활성 물질의 분리방법
KR101700994B1 (ko) * 2013-07-01 2017-01-31 주식회사 엘지화학 광활성 물질의 분리방법

Also Published As

Publication number Publication date
JP2002221794A (ja) 2002-08-09
JP4665333B2 (ja) 2011-04-06
CN1356356A (zh) 2002-07-03
CN1246389C (zh) 2006-03-22
US20020090564A1 (en) 2002-07-11
EP1209523A3 (en) 2003-09-24
TW573216B (en) 2004-01-21
EP1209523B1 (en) 2015-08-26
KR20020041302A (ko) 2002-06-01
US6593043B2 (en) 2003-07-15
EP1209523A2 (en) 2002-05-29

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