JP4664622B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
JP4664622B2
JP4664622B2 JP2004150614A JP2004150614A JP4664622B2 JP 4664622 B2 JP4664622 B2 JP 4664622B2 JP 2004150614 A JP2004150614 A JP 2004150614A JP 2004150614 A JP2004150614 A JP 2004150614A JP 4664622 B2 JP4664622 B2 JP 4664622B2
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Japan
Prior art keywords
refresh
cell
counter
data
write
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Japanese (ja)
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JP2005332497A5 (enExample
JP2005332497A (ja
Inventor
春希 戸田
基 市橋
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Toshiba Corp
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Toshiba Corp
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Priority to JP2004150614A priority Critical patent/JP4664622B2/ja
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Publication of JP2005332497A5 publication Critical patent/JP2005332497A5/ja
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JP2004150614A 2004-05-20 2004-05-20 半導体集積回路装置 Expired - Fee Related JP4664622B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004150614A JP4664622B2 (ja) 2004-05-20 2004-05-20 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004150614A JP4664622B2 (ja) 2004-05-20 2004-05-20 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JP2005332497A JP2005332497A (ja) 2005-12-02
JP2005332497A5 JP2005332497A5 (enExample) 2007-04-19
JP4664622B2 true JP4664622B2 (ja) 2011-04-06

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JP2004150614A Expired - Fee Related JP4664622B2 (ja) 2004-05-20 2004-05-20 半導体集積回路装置

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JP (1) JP4664622B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8310893B2 (en) 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US9257169B2 (en) 2012-05-14 2016-02-09 Samsung Electronics Co., Ltd. Memory device, memory system, and operating methods thereof
US9245604B2 (en) 2013-05-08 2016-01-26 International Business Machines Corporation Prioritizing refreshes in a memory device
US9224450B2 (en) 2013-05-08 2015-12-29 International Business Machines Corporation Reference voltage modification in a memory device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950014089B1 (ko) * 1993-11-08 1995-11-21 현대전자산업주식회사 동기식 디램의 히든 셀프 리프레쉬 방법 및 장치
JP4704691B2 (ja) * 2004-02-16 2011-06-15 シャープ株式会社 半導体記憶装置

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JP2005332497A (ja) 2005-12-02

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