JP4663224B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4663224B2
JP4663224B2 JP2003326611A JP2003326611A JP4663224B2 JP 4663224 B2 JP4663224 B2 JP 4663224B2 JP 2003326611 A JP2003326611 A JP 2003326611A JP 2003326611 A JP2003326611 A JP 2003326611A JP 4663224 B2 JP4663224 B2 JP 4663224B2
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Prior art keywords
conductive film
film
wiring
insulating film
semiconductor device
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JP2003326611A
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Japanese (ja)
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JP2004134788A5 (enExample
JP2004134788A (ja
Inventor
舜平 山崎
光明 納
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003326611A priority Critical patent/JP4663224B2/ja
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Publication of JP2004134788A5 publication Critical patent/JP2004134788A5/ja
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2003326611A 2002-09-20 2003-09-18 半導体装置の作製方法 Expired - Fee Related JP4663224B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003326611A JP4663224B2 (ja) 2002-09-20 2003-09-18 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002276379 2002-09-20
JP2003326611A JP4663224B2 (ja) 2002-09-20 2003-09-18 半導体装置の作製方法

Publications (3)

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JP2004134788A JP2004134788A (ja) 2004-04-30
JP2004134788A5 JP2004134788A5 (enExample) 2006-10-19
JP4663224B2 true JP4663224B2 (ja) 2011-04-06

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JP2003326611A Expired - Fee Related JP4663224B2 (ja) 2002-09-20 2003-09-18 半導体装置の作製方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7491590B2 (en) 2004-05-28 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor in display device
JP2006114493A (ja) * 2004-09-17 2006-04-27 Semiconductor Energy Lab Co Ltd 発光装置
US7791270B2 (en) * 2004-09-17 2010-09-07 Semiconductor Energy Laboratory Co., Ltd Light-emitting device with reduced deterioration of periphery
JP2006113568A (ja) * 2004-09-17 2006-04-27 Semiconductor Energy Lab Co Ltd 表示装置、及び表示装置の作製方法
US8350466B2 (en) 2004-09-17 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP5182600B2 (ja) * 2005-09-30 2013-04-17 セイコーエプソン株式会社 アレイ基板の製造方法
JP4351695B2 (ja) * 2006-11-27 2009-10-28 エルジー ディスプレイ カンパニー リミテッド 有機ｅｌ表示装置
TWI529942B (zh) 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
JP2012255840A (ja) 2011-06-07 2012-12-27 Japan Display West Co Ltd 表示装置および電子機器
WO2018123955A1 (ja) * 2016-12-28 2018-07-05 三井金属鉱業株式会社 配線構造及びその製造方法、スパッタリングターゲット材、並びに酸化防止方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03195087A (ja) * 1989-12-25 1991-08-26 Matsushita Electric Works Ltd 金属層積層無機質基板への回路パターンの形成方法
JPH04348035A (ja) * 1991-05-24 1992-12-03 Nippon Steel Corp 配線形成方法
JPH0566421A (ja) * 1991-09-09 1993-03-19 Sanyo Electric Co Ltd 多層配線の形成方法
JPH08274093A (ja) * 1995-03-29 1996-10-18 Oki Electric Ind Co Ltd 半導体素子の金属配線形成方法
JP2001049423A (ja) * 1999-08-02 2001-02-20 Nippon Telegr & Teleph Corp <Ntt> 金属膜の形成方法
TW538246B (en) * 2000-06-05 2003-06-21 Semiconductor Energy Lab Display panel, display panel inspection method, and display panel manufacturing method
JP2002261007A (ja) * 2001-02-28 2002-09-13 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003328126A (ja) * 2002-05-09 2003-11-19 Konica Minolta Holdings Inc パターニング方法及び製膜装置

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JP2004134788A (ja) 2004-04-30

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