JP4661990B2 - 成膜装置、成膜方法、基板処理装置及び記憶媒体 - Google Patents

成膜装置、成膜方法、基板処理装置及び記憶媒体 Download PDF

Info

Publication number
JP4661990B2
JP4661990B2 JP2010180537A JP2010180537A JP4661990B2 JP 4661990 B2 JP4661990 B2 JP 4661990B2 JP 2010180537 A JP2010180537 A JP 2010180537A JP 2010180537 A JP2010180537 A JP 2010180537A JP 4661990 B2 JP4661990 B2 JP 4661990B2
Authority
JP
Japan
Prior art keywords
gas
reaction gas
gas supply
separation
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010180537A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010263245A (ja
Inventor
寿 加藤
学 本間
アントニー ディップ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/147,707 external-priority patent/US20090324826A1/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2010180537A priority Critical patent/JP4661990B2/ja
Publication of JP2010263245A publication Critical patent/JP2010263245A/ja
Application granted granted Critical
Publication of JP4661990B2 publication Critical patent/JP4661990B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2010180537A 2008-06-27 2010-08-11 成膜装置、成膜方法、基板処理装置及び記憶媒体 Active JP4661990B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010180537A JP4661990B2 (ja) 2008-06-27 2010-08-11 成膜装置、成膜方法、基板処理装置及び記憶媒体

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/147,707 US20090324826A1 (en) 2008-06-27 2008-06-27 Film Deposition Apparatus, Film Deposition Method, and Computer Readable Storage Medium
JP2008215984 2008-08-25
JP2009056685 2009-03-10
JP2010180537A JP4661990B2 (ja) 2008-06-27 2010-08-11 成膜装置、成膜方法、基板処理装置及び記憶媒体

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2009139575A Division JP5310283B2 (ja) 2008-06-27 2009-06-10 成膜方法、成膜装置、基板処理装置及び記憶媒体

Publications (2)

Publication Number Publication Date
JP2010263245A JP2010263245A (ja) 2010-11-18
JP4661990B2 true JP4661990B2 (ja) 2011-03-30

Family

ID=43361019

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2010180537A Active JP4661990B2 (ja) 2008-06-27 2010-08-11 成膜装置、成膜方法、基板処理装置及び記憶媒体
JP2011029193A Active JP5375853B2 (ja) 2008-06-27 2011-02-14 成膜装置、成膜方法及び記憶媒体
JP2011029190A Active JP5375852B2 (ja) 2008-06-27 2011-02-14 成膜装置、成膜方法及び記憶媒体

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2011029193A Active JP5375853B2 (ja) 2008-06-27 2011-02-14 成膜装置、成膜方法及び記憶媒体
JP2011029190A Active JP5375852B2 (ja) 2008-06-27 2011-02-14 成膜装置、成膜方法及び記憶媒体

Country Status (1)

Country Link
JP (3) JP4661990B2 (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130140576A (ko) 2012-06-14 2013-12-24 도쿄엘렉트론가부시키가이샤 성막 방법
US8642487B2 (en) 2011-05-18 2014-02-04 Tokyo Electron Limited Film deposition method and film deposition apparatus
US8853097B2 (en) 2012-01-20 2014-10-07 Tokyo Electron Limited Particle reducing method
US8895456B2 (en) 2012-12-21 2014-11-25 Tokyo Electron Limited Method of depositing a film
US8921237B2 (en) 2012-12-26 2014-12-30 Tokyo Electron Limited Method of depositing a film
JP2015010271A (ja) * 2013-07-02 2015-01-19 東京エレクトロン株式会社 成膜方法
US8987147B2 (en) 2012-12-21 2015-03-24 Tokyo Electron Limited Method of depositing a film using a turntable apparatus
US9040434B2 (en) 2012-07-13 2015-05-26 Tokyo Electron Limited Film deposition method and film deposition apparatus
US9153429B2 (en) 2012-12-21 2015-10-06 Tokyo Electron Limited Film deposition apparatus having a turntable and film deposition method
KR101786167B1 (ko) 2013-09-18 2017-10-17 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5423205B2 (ja) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 成膜装置
JP5445044B2 (ja) * 2008-11-14 2014-03-19 東京エレクトロン株式会社 成膜装置
JP5257328B2 (ja) * 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5310512B2 (ja) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 基板処理装置
JP5553588B2 (ja) * 2009-12-10 2014-07-16 東京エレクトロン株式会社 成膜装置
WO2011125395A1 (ja) * 2010-04-09 2011-10-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP2013077805A (ja) * 2011-09-16 2013-04-25 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP6042656B2 (ja) * 2011-09-30 2016-12-14 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP5886730B2 (ja) * 2012-11-26 2016-03-16 東京エレクトロン株式会社 成膜方法、その成膜方法のプログラム、そのプログラムを記録した記録媒体、及び、成膜装置
JP6294151B2 (ja) * 2014-05-12 2018-03-14 東京エレクトロン株式会社 成膜方法
JP6294194B2 (ja) * 2014-09-02 2018-03-14 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102264257B1 (ko) * 2014-12-30 2021-06-14 삼성전자주식회사 막 형성 방법 및 이를 이용한 반도체 장치 제조 방법
JP6456185B2 (ja) 2015-02-26 2019-01-23 東京エレクトロン株式会社 シリコン含有膜の成膜方法
JP6494495B2 (ja) * 2015-06-30 2019-04-03 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102010633B1 (ko) 2015-06-30 2019-08-13 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
JP6685216B2 (ja) * 2016-01-26 2020-04-22 東京エレクトロン株式会社 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
JP6608332B2 (ja) * 2016-05-23 2019-11-20 東京エレクトロン株式会社 成膜装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63112A (ja) * 1986-06-19 1988-01-05 Rohm Co Ltd 半導体製造装置
JPS63140619U (enrdf_load_stackoverflow) * 1987-03-06 1988-09-16
JPH08181076A (ja) * 1994-10-26 1996-07-12 Fuji Xerox Co Ltd 薄膜形成方法および薄膜形成装置
JPH08264618A (ja) * 1995-03-27 1996-10-11 Toshiba Corp 半導体製造装置及び半導体装置の製造方法
JPH08340036A (ja) * 1995-06-09 1996-12-24 Tokyo Electron Ltd 処理装置
JP2978974B2 (ja) * 1996-02-01 1999-11-15 キヤノン販売株式会社 プラズマ処理装置
JP2003502878A (ja) * 1999-06-24 2003-01-21 ナーハ ガジル、プラサード 原子層化学気相成長装置
KR100319494B1 (ko) * 1999-07-15 2002-01-09 김용일 원자층 에피택시 공정을 위한 반도체 박막 증착장치
DE102004056170A1 (de) * 2004-08-06 2006-03-16 Aixtron Ag Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung mit hohem Durchsatz
US20060073276A1 (en) * 2004-10-04 2006-04-06 Eric Antonissen Multi-zone atomic layer deposition apparatus and method
KR100558922B1 (ko) * 2004-12-16 2006-03-10 (주)퓨전에이드 박막 증착장치 및 방법
DE102005055468A1 (de) * 2005-11-22 2007-05-24 Aixtron Ag Verfahren zum Abscheiden von Schichten in einem CVD-Reaktor sowie Gaseinlassorgan für einen CVD-Reaktor
US20070218702A1 (en) * 2006-03-15 2007-09-20 Asm Japan K.K. Semiconductor-processing apparatus with rotating susceptor
JP2008172083A (ja) * 2007-01-12 2008-07-24 Sharp Corp 気相成長装置および気相成長方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8642487B2 (en) 2011-05-18 2014-02-04 Tokyo Electron Limited Film deposition method and film deposition apparatus
US8853097B2 (en) 2012-01-20 2014-10-07 Tokyo Electron Limited Particle reducing method
US8932963B2 (en) 2012-01-20 2015-01-13 Tokyo Electron Limited Film deposition method
US8962495B2 (en) 2012-06-14 2015-02-24 Tokyo Electron Limited Film deposition method
JP2013258383A (ja) * 2012-06-14 2013-12-26 Tokyo Electron Ltd 成膜方法
KR20130140576A (ko) 2012-06-14 2013-12-24 도쿄엘렉트론가부시키가이샤 성막 방법
KR101588083B1 (ko) * 2012-06-14 2016-01-25 도쿄엘렉트론가부시키가이샤 성막 방법
US9040434B2 (en) 2012-07-13 2015-05-26 Tokyo Electron Limited Film deposition method and film deposition apparatus
US8895456B2 (en) 2012-12-21 2014-11-25 Tokyo Electron Limited Method of depositing a film
US8987147B2 (en) 2012-12-21 2015-03-24 Tokyo Electron Limited Method of depositing a film using a turntable apparatus
US9153429B2 (en) 2012-12-21 2015-10-06 Tokyo Electron Limited Film deposition apparatus having a turntable and film deposition method
US8921237B2 (en) 2012-12-26 2014-12-30 Tokyo Electron Limited Method of depositing a film
JP2015010271A (ja) * 2013-07-02 2015-01-19 東京エレクトロン株式会社 成膜方法
US9136133B2 (en) 2013-07-02 2015-09-15 Tokyo Electron Limited Method of depositing film
KR101786167B1 (ko) 2013-09-18 2017-10-17 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
US10837110B2 (en) 2013-09-18 2020-11-17 Tokyo Electron Limited Substrate processing apparatus and method for processing a substrate

Also Published As

Publication number Publication date
JP2010263245A (ja) 2010-11-18
JP5375852B2 (ja) 2013-12-25
JP2011103495A (ja) 2011-05-26
JP5375853B2 (ja) 2013-12-25
JP2011103496A (ja) 2011-05-26

Similar Documents

Publication Publication Date Title
JP4661990B2 (ja) 成膜装置、成膜方法、基板処理装置及び記憶媒体
JP5310283B2 (ja) 成膜方法、成膜装置、基板処理装置及び記憶媒体
JP5287592B2 (ja) 成膜装置
KR101522739B1 (ko) 성막 장치, 성막 방법 및 기억 매체
JP5423529B2 (ja) 成膜装置、成膜方法及び記憶媒体
JP5131240B2 (ja) 成膜装置、成膜方法及び記憶媒体
JP5253932B2 (ja) 成膜装置、基板処理装置、成膜方法及び記憶媒体
JP5253933B2 (ja) 成膜装置、基板処理装置、成膜方法及び記憶媒体
KR101502205B1 (ko) 성막 장치 및 성막 방법
JP5181100B2 (ja) 基板処理装置、基板処理方法及び記憶媒体
JP5141607B2 (ja) 成膜装置
JP5195174B2 (ja) 成膜装置及び成膜方法
JP5262452B2 (ja) 成膜装置及び基板処理装置
JP5093162B2 (ja) 成膜装置、成膜方法及び記憶媒体
JP2011134996A (ja) 成膜装置
JP2010126797A (ja) 成膜装置、半導体製造装置、これらに用いられるサセプタ、プログラム、およびコンピュータ可読記憶媒体
JP5447632B2 (ja) 基板処理装置
JP2010135510A (ja) 成膜装置
KR101734779B1 (ko) 성막 방법
JP5692337B2 (ja) 成膜装置、成膜方法及び記憶媒体

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100812

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100812

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20100812

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20100906

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100914

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101109

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101207

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101220

R150 Certificate of patent or registration of utility model

Ref document number: 4661990

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140114

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250