JP4652707B2 - 結晶化装置、結晶化方法、位相変調素子、およびデバイス - Google Patents

結晶化装置、結晶化方法、位相変調素子、およびデバイス Download PDF

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JP4652707B2
JP4652707B2 JP2004083799A JP2004083799A JP4652707B2 JP 4652707 B2 JP4652707 B2 JP 4652707B2 JP 2004083799 A JP2004083799 A JP 2004083799A JP 2004083799 A JP2004083799 A JP 2004083799A JP 4652707 B2 JP4652707 B2 JP 4652707B2
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phase
region
phase modulation
light intensity
modulation element
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JP2004343073A5 (enExample
JP2004343073A (ja
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正清 松村
幸夫 谷口
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株式会社 液晶先端技術開発センター
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JP2004083799A 2003-04-22 2004-03-23 結晶化装置、結晶化方法、位相変調素子、およびデバイス Expired - Fee Related JP4652707B2 (ja)

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JP4657774B2 (ja) * 2004-09-02 2011-03-23 株式会社 液晶先端技術開発センター 光照射装置、結晶化装置、結晶化方法、半導体デバイス、及び光変調素子
KR20070094470A (ko) 2006-03-17 2007-09-20 가부시키가이샤 에키쇼센탄 기쥬쓰 가이하쓰센타 광조사장치, 광조사방법, 결정화장치, 결정화방법, 및반도체디바이스
JP2008270726A (ja) * 2007-03-23 2008-11-06 Advanced Lcd Technologies Development Center Co Ltd 結晶化装置、結晶化方法、デバイス、および光変調素子
JP5424113B2 (ja) * 2009-12-17 2014-02-26 大日本印刷株式会社 加工装置、および加工装置で用いられる変調マスク
CN114911036A (zh) * 2022-05-18 2022-08-16 Oppo广东移动通信有限公司 镜头及电子设备

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JP3180481B2 (ja) * 1992-11-24 2001-06-25 日新電機株式会社 薄膜トランジスタ用単結晶シリコン層の形成方法
JP4403599B2 (ja) * 1999-04-19 2010-01-27 ソニー株式会社 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法
JP3448685B2 (ja) * 2000-07-24 2003-09-22 松下電器産業株式会社 半導体装置、液晶表示装置およびｅｌ表示装置
JP3344418B2 (ja) * 2000-11-10 2002-11-11 松下電器産業株式会社 露光装置、半導体薄膜、薄膜トランジスタ、液晶表示装置、ｅｌ表示装置およびその製造方法

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