JP4651072B2 - 堆積膜形成方法、および堆積膜形成装置 - Google Patents

堆積膜形成方法、および堆積膜形成装置 Download PDF

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Publication number
JP4651072B2
JP4651072B2 JP2001164786A JP2001164786A JP4651072B2 JP 4651072 B2 JP4651072 B2 JP 4651072B2 JP 2001164786 A JP2001164786 A JP 2001164786A JP 2001164786 A JP2001164786 A JP 2001164786A JP 4651072 B2 JP4651072 B2 JP 4651072B2
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Japan
Prior art keywords
film forming
deposited film
belt
shaped member
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001164786A
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English (en)
Japanese (ja)
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JP2002356778A5 (enExample
JP2002356778A (ja
Inventor
篤司 保野
雅敏 田中
博司 伊澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2001164786A priority Critical patent/JP4651072B2/ja
Priority to US10/153,721 priority patent/US6727456B2/en
Publication of JP2002356778A publication Critical patent/JP2002356778A/ja
Publication of JP2002356778A5 publication Critical patent/JP2002356778A5/ja
Application granted granted Critical
Publication of JP4651072B2 publication Critical patent/JP4651072B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
    • B65H20/00—Advancing webs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
    • B65H2301/00—Handling processes for sheets or webs
    • B65H2301/50—Auxiliary process performed during handling process
    • B65H2301/51—Modifying a characteristic of handled material
    • B65H2301/512—Changing form of handled material
    • B65H2301/5121—Bending, buckling, curling, bringing a curvature
    • B65H2301/51214—Bending, buckling, curling, bringing a curvature parallel to direction of displacement of handled material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
    • B65H2404/00—Parts for transporting or guiding the handled material
    • B65H2404/20—Belts
    • B65H2404/28—Other properties of belts
    • B65H2404/283—Other properties of belts magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2001164786A 2001-05-31 2001-05-31 堆積膜形成方法、および堆積膜形成装置 Expired - Fee Related JP4651072B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001164786A JP4651072B2 (ja) 2001-05-31 2001-05-31 堆積膜形成方法、および堆積膜形成装置
US10/153,721 US6727456B2 (en) 2001-05-31 2002-05-24 Deposited film forming method and deposited film forming apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001164786A JP4651072B2 (ja) 2001-05-31 2001-05-31 堆積膜形成方法、および堆積膜形成装置

Publications (3)

Publication Number Publication Date
JP2002356778A JP2002356778A (ja) 2002-12-13
JP2002356778A5 JP2002356778A5 (enExample) 2008-07-17
JP4651072B2 true JP4651072B2 (ja) 2011-03-16

Family

ID=19007557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001164786A Expired - Fee Related JP4651072B2 (ja) 2001-05-31 2001-05-31 堆積膜形成方法、および堆積膜形成装置

Country Status (2)

Country Link
US (1) US6727456B2 (enExample)
JP (1) JP4651072B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4560245B2 (ja) * 2001-06-29 2010-10-13 キヤノン株式会社 光起電力素子
US7105460B2 (en) * 2002-07-11 2006-09-12 Applied Materials Nitrogen-free dielectric anti-reflective coating and hardmask
US9252318B2 (en) * 2008-03-05 2016-02-02 Hanergy Hi-Tech Power (Hk) Limited Solution containment during buffer layer deposition
WO2010065955A1 (en) * 2008-12-05 2010-06-10 Solopower, Inc. Method and apparatus for forming contact layers for continuous workpieces
JP5440936B2 (ja) * 2010-01-21 2014-03-12 富士電機株式会社 薄膜製造装置
US9818906B2 (en) 2013-12-20 2017-11-14 NuvoSun, Inc. Web based chemical bath deposition apparatus
TW201534755A (zh) * 2013-12-20 2015-09-16 Nuvosun Inc 基於薄板的化學浴沉積設備
CN112134529A (zh) * 2020-09-25 2020-12-25 广州美旭信息科技有限公司 一种太阳能移动充电设备
CN112636685B (zh) * 2020-12-03 2022-03-01 常州工程职业技术学院 一种光伏组件自清洁系统
CN112247327B (zh) * 2020-12-21 2021-05-14 衡阳市新德力交通材料有限公司 一种等离子切割机

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400409A (en) 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
US4462333A (en) 1982-10-27 1984-07-31 Energy Conversion Devices, Inc. Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus
US4759993A (en) * 1985-04-25 1988-07-26 Ovonic Synthetic Materials Co., Inc. Plasma chemical vapor deposition SiO2-x coated articles and plasma assisted chemical vapor deposition method of applying the coating
EP0609104B1 (en) * 1993-01-29 1998-05-20 Canon Kabushiki Kaisha Process for the formation of functional deposited films
US6273955B1 (en) 1995-08-28 2001-08-14 Canon Kabushiki Kaisha Film forming apparatus
JP3578293B2 (ja) * 1995-12-11 2004-10-20 キヤノン株式会社 機能性堆積膜の連続的形成方法およびその装置
JP3332700B2 (ja) 1995-12-22 2002-10-07 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
JP3902878B2 (ja) * 1998-11-30 2007-04-11 キヤノン株式会社 機能性堆積膜の形成装置

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Publication number Publication date
US6727456B2 (en) 2004-04-27
US20030006218A1 (en) 2003-01-09
JP2002356778A (ja) 2002-12-13

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