JP4649950B2 - 冷却器付半導体装置 - Google Patents
冷却器付半導体装置 Download PDFInfo
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- JP4649950B2 JP4649950B2 JP2004312150A JP2004312150A JP4649950B2 JP 4649950 B2 JP4649950 B2 JP 4649950B2 JP 2004312150 A JP2004312150 A JP 2004312150A JP 2004312150 A JP2004312150 A JP 2004312150A JP 4649950 B2 JP4649950 B2 JP 4649950B2
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- Prior art keywords
- semiconductor device
- cooler
- transfer member
- heat transfer
- heat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
図1は、本発明の参考例1の冷却器付半導体装置の形状を示した図である。
図3は、実施の形態1の冷却器付半導体装置150の構成を示した図である。
参考例1では、半導体装置側に電気絶縁性および水分遮断性のある無機硬質膜を形成していたが、参考例2では、冷却器側に無機硬質膜を形成する。
Claims (2)
- 半導体チップと、
放熱面を有し、前記半導体チップの第1の主面に接続される第1の伝熱部材と、
前記第1の伝熱部材を少なくとも前記放熱面を露出させた状態で被覆し、前記半導体チップを収容する樹脂部と、
前記第1の伝熱部材の前記放熱面と前記樹脂部の外表面とを被覆する電気絶縁性および水分遮断性を有する無機硬質膜と、
前記第1の伝熱部材の前記放熱面に対し、前記無機硬質膜を介して流体を接触させて前記半導体チップを冷却する冷却器とを備える、冷却器付半導体装置。 - 放熱面を有し、前記半導体チップの第2の主面に接続される第2の伝熱部材をさらに備え、
前記樹脂部は、前記第2の伝熱部材を少なくとも前記放熱面を露出させた状態で被覆し、
前記無機硬質膜は、前記第2の伝熱部材の前記放熱面をさらに被覆し、
前記流体は、前記第2の伝熱部材の前記放熱面に対し接触する、請求項1に記載の冷却器付半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004312150A JP4649950B2 (ja) | 2004-10-27 | 2004-10-27 | 冷却器付半導体装置 |
Applications Claiming Priority (1)
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JP2004312150A JP4649950B2 (ja) | 2004-10-27 | 2004-10-27 | 冷却器付半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2006128260A JP2006128260A (ja) | 2006-05-18 |
JP4649950B2 true JP4649950B2 (ja) | 2011-03-16 |
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JP2004312150A Expired - Fee Related JP4649950B2 (ja) | 2004-10-27 | 2004-10-27 | 冷却器付半導体装置 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5201085B2 (ja) * | 2009-06-10 | 2013-06-05 | 日産自動車株式会社 | 半導体装置 |
JP5845835B2 (ja) * | 2011-11-14 | 2016-01-20 | 株式会社デンソー | 半導体モジュール |
JP6201532B2 (ja) * | 2013-08-30 | 2017-09-27 | 富士電機株式会社 | 半導体装置 |
JP6193173B2 (ja) * | 2014-04-17 | 2017-09-06 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP6344981B2 (ja) * | 2014-06-03 | 2018-06-20 | 日立オートモティブシステムズ株式会社 | 半導体モジュールの製造方法 |
DE112015004424B4 (de) | 2014-10-29 | 2021-05-20 | Hitachi Automotive Systems, Ltd. | Verfahren zur Herstellung einer elektronischen Vorrichtung |
CN115841996B (zh) * | 2022-09-30 | 2023-09-15 | 浙江大学杭州国际科创中心 | 一种基于金属骨架相变材料的热缓冲功率模块及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0260150A (ja) * | 1988-08-26 | 1990-02-28 | Semiconductor Energy Lab Co Ltd | 電子装置およびその作製方法 |
JP2001308245A (ja) * | 2000-04-25 | 2001-11-02 | Denso Corp | 冷媒冷却型両面冷却半導体装置 |
JP2001308237A (ja) * | 2000-04-19 | 2001-11-02 | Denso Corp | 両面冷却型半導体カ−ドモジュ−ル及びそれを用いた冷媒間接冷却型半導体装置 |
-
2004
- 2004-10-27 JP JP2004312150A patent/JP4649950B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0260150A (ja) * | 1988-08-26 | 1990-02-28 | Semiconductor Energy Lab Co Ltd | 電子装置およびその作製方法 |
JP2001308237A (ja) * | 2000-04-19 | 2001-11-02 | Denso Corp | 両面冷却型半導体カ−ドモジュ−ル及びそれを用いた冷媒間接冷却型半導体装置 |
JP2001308245A (ja) * | 2000-04-25 | 2001-11-02 | Denso Corp | 冷媒冷却型両面冷却半導体装置 |
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JP2006128260A (ja) | 2006-05-18 |
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