JP5201085B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5201085B2 JP5201085B2 JP2009138990A JP2009138990A JP5201085B2 JP 5201085 B2 JP5201085 B2 JP 5201085B2 JP 2009138990 A JP2009138990 A JP 2009138990A JP 2009138990 A JP2009138990 A JP 2009138990A JP 5201085 B2 JP5201085 B2 JP 5201085B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- opening
- insulator
- main surface
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
12,13…主面電極
14…信号系電極
21,22…バスバー
23…信号端子
24,26,481〜484…導体パターン
24a,24b…露出部
25…貫通ビア
31〜34…接合体
41…配線部材
42…絶縁体
42a,421a…絶縁体部
43〜45,432,471〜474…開口部
47…高熱伝導性樹脂
51…樹脂
461〜464…絶縁機材
Claims (7)
- 絶縁体を介して対向配置された第一の通電部材と第二の通電部材との間に半導体素子が配置された半導体装置において、
前記絶縁体は、前記半導体素子の第一の主面に形成された第一の主面電極よりも大きく、かつ前記半導体素子よりも小さい第一の開口部が形成され、前記第一の開口部の内側で前記第一の主面電極と前記第一の通電部材とが第一の導電性接合体により電気的に接続され、前記第一の開口部の深さと前記第一の導電性接合体の厚さとは同一である
ことを特徴とする半導体装置。 - 前記第一の通電部材と前記第二の通電部材との間の間隔と前記絶縁体の厚さとは同一であり、
前記絶縁体は、開口寸法が前記半導体素子の外形寸法と同一の第二の開口部と、開口寸法が第二の導電性接合体の外形寸法と同一な第三の開口部とが形成され、前記第二の開口部の内側に前記半導体素子が配置され、前記第三の開口部の内側で前記半導体素子の第二の主面に形成された第二の主面電極と前記第二の通電部材とが前記第二の導電性接合体により電気的に接続されている
ことを特徴とする請求項1に記載の半導体装置。 - 前記第二の導電性接合体の外形寸法は前記半導体素子の外形寸法よりも大きく、前記第二の開口部と前記第三の開口部との中心は一致している
ことを特徴とする請求項2に記載の半導体装置。 - 前記半導体素子の外周の前記絶縁体の内部に熱伝導体を設けた
ことを特徴とする請求項1〜3のいずれか1項に記載の半導体装置。 - 前記半導体素子の第一の主面と接する高熱伝導性樹脂を前記絶縁体の内部に設けた
ことを特徴とする請求項1〜4のいずれか1項に記載の半導体装置。 - 前記絶縁体は、前記半導体素子と前記半導体装置の外部とを電気的に接続する配線を含む多層配線基板で構成されている
ことを特徴とする請求項1〜5のいずれか1項に記載の半導体装置。 - 前記絶縁体は、樹脂成型品で構成されている
ことを特徴とする請求項1〜6のいずれか1項に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009138990A JP5201085B2 (ja) | 2009-06-10 | 2009-06-10 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009138990A JP5201085B2 (ja) | 2009-06-10 | 2009-06-10 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010287651A JP2010287651A (ja) | 2010-12-24 |
JP5201085B2 true JP5201085B2 (ja) | 2013-06-05 |
Family
ID=43543157
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009138990A Expired - Fee Related JP5201085B2 (ja) | 2009-06-10 | 2009-06-10 | 半導体装置 |
Country Status (1)
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JP (1) | JP5201085B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6500562B2 (ja) * | 2015-03-31 | 2019-04-17 | アイシン・エィ・ダブリュ株式会社 | 半導体モジュール |
JP6834673B2 (ja) * | 2017-03-27 | 2021-02-24 | 株式会社デンソー | 半導体モジュール |
WO2020189508A1 (ja) * | 2019-03-19 | 2020-09-24 | 株式会社デンソー | 半導体モジュールおよびこれに用いられる半導体装置 |
JP7088224B2 (ja) * | 2019-03-19 | 2022-06-21 | 株式会社デンソー | 半導体モジュールおよびこれに用いられる半導体装置 |
CN115699296A (zh) * | 2020-06-05 | 2023-02-03 | 株式会社电装 | 半导体装置、半导体模组及半导体装置的制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3525832B2 (ja) * | 1999-11-24 | 2004-05-10 | 株式会社デンソー | 半導体装置 |
JP4228830B2 (ja) * | 2003-08-06 | 2009-02-25 | 株式会社デンソー | 半導体冷却ユニット |
JP4649950B2 (ja) * | 2004-10-27 | 2011-03-16 | トヨタ自動車株式会社 | 冷却器付半導体装置 |
JP4555187B2 (ja) * | 2005-08-01 | 2010-09-29 | ニチコン株式会社 | パワーモジュールおよびその製造方法 |
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2009
- 2009-06-10 JP JP2009138990A patent/JP5201085B2/ja not_active Expired - Fee Related
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JP2010287651A (ja) | 2010-12-24 |
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