JP2006128260A - 半導体装置および冷却器付半導体装置 - Google Patents
半導体装置および冷却器付半導体装置 Download PDFInfo
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- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/732—Location after the connecting process
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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Abstract
【解決手段】 半導体装置1は、シリコンチップ22と、シリコンチップ22の両主面にそれぞれはんだ層30、32によって電気的に接続された電極24,26と、ゲート電極にワイヤ42によって接続されている電極28とを含む。半導体装置1は、さらに、電極24,26の各放熱面と樹脂部36の外表面とを被覆する電気絶縁性および水分遮断性を有する無機硬質膜40とを含む。無機硬質膜40によって金属製のマイクロチャネル冷却器と電極24,26の間の絶縁性が確保され、コンパクトでかつ放熱の効率がよい半導体装置を実現できる。半導体装置1を直接冷却水に浸漬して冷やすことも可能となる。
【選択図】 図2
Description
図1は、本発明の実施の形態1の冷却器付半導体装置の形状を示した図である。
図3は、実施の形態2の冷却器付半導体装置150の構成を示した図である。
実施の形態1では、半導体装置側に電気絶縁性および水分遮断性のある無機硬質膜を形成していたが、実施の形態3では、冷却器側に無機硬質膜を形成する。
Claims (8)
- 半導体チップと、
放熱面を有し、前記半導体チップの第1の主面に接続される第1の伝熱部材と、
前記第1の伝熱部材を少なくとも前記放熱面を露出させた状態で被覆し、前記半導体チップを収容する樹脂部と、
前記第1の伝熱部材の前記放熱面と前記樹脂部の外表面とを被覆する電気絶縁性および水分遮断性を有する無機硬質膜とを備える、半導体装置。 - 放熱面を有し、前記半導体チップの第2の主面に接続される第2の伝熱部材をさらに備え、
前記樹脂部は、前記第2の伝熱部材を少なくとも前記放熱面を露出させた状態で被覆し、
前記無機硬質膜は、前記第2の伝熱部材の前記放熱面をさらに被覆する、請求項1に記載の半導体装置。 - 前記第1、第2の伝熱部材の各放熱面および前記樹脂部の外表面と前記無機硬質膜との間に設けられる緩衝層をさらに備える、請求項3に記載の半導体装置。
- 半導体チップと、
放熱面を有し、前記半導体チップの第1の主面に接続される第1の伝熱部材と、
前記第1の伝熱部材を少なくとも前記放熱面を露出させた状態で被覆し、前記半導体チップを収容する樹脂部と、
前記第1の伝熱部材の前記放熱面と前記樹脂部の外表面とを被覆する電気絶縁性および水分遮断性を有する無機硬質膜と、
前記第1の伝熱部材の前記放熱面に対し、前記無機硬質膜を介して接触する冷却器とを備える、冷却器付半導体装置。 - 放熱面を有し、前記半導体チップの第2の主面に接続される第2の伝熱部材をさらに備え、
前記樹脂部は、前記第2の伝熱部材を少なくとも前記放熱面を露出させた状態で被覆し、
前記無機硬質膜は、前記第2の伝熱部材の前記放熱面を被覆し、
前記冷却器は、前記第2の伝熱部材の前記放熱面に対し、前記無機硬質膜を介して接触する、請求項4に記載の冷却器付半導体装置。 - 半導体チップと、
放熱面を有し、前記半導体チップの第1の主面に接続される第1の伝熱部材と、
前記第1の伝熱部材を少なくとも前記放熱面を露出させた状態で被覆し、前記半導体チップを収容する樹脂部と、
前記第1の伝熱部材の前記放熱面と前記樹脂部の外表面とを被覆する電気絶縁性および水分遮断性を有する無機硬質膜と、
前記第1の伝熱部材の前記放熱面に対し、前記無機硬質膜を介して流体を接触させて前記半導体チップを冷却する冷却器とを備える、冷却器付半導体装置。 - 放熱面を有し、前記半導体チップの第2の主面に接続される第2の伝熱部材をさらに備え、
前記樹脂部は、前記第2の伝熱部材を少なくとも前記放熱面を露出させた状態で被覆し、
前記無機硬質膜は、前記第2の伝熱部材の前記放熱面をさらに被覆し、
前記流体は、前記第2の伝熱部材の前記放熱面に対し接触する、請求項6に記載の冷却器付半導体装置。 - 放熱部を有する半導体装置と、
前記放熱部に接触する冷却器とを備え、
前記冷却器は、
伝熱部材と、
前記伝熱部材の表面の少なくとも前記放熱部に接触する部分に設けられた電気絶縁性を有する無機硬質膜とを含む、冷却器付半導体装置。
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010287651A (ja) * | 2009-06-10 | 2010-12-24 | Nissan Motor Co Ltd | 半導体装置 |
JP2013105884A (ja) * | 2011-11-14 | 2013-05-30 | Denso Corp | 半導体モジュール |
JP2015050267A (ja) * | 2013-08-30 | 2015-03-16 | 富士電機株式会社 | 半導体装置 |
JP2015208054A (ja) * | 2014-04-17 | 2015-11-19 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
WO2015186470A1 (ja) * | 2014-06-03 | 2015-12-10 | 日立オートモティブシステムズ株式会社 | 半導体モジュールおよび半導体モジュールの製造方法ならびに電子制御装置 |
JPWO2016067930A1 (ja) * | 2014-10-29 | 2017-07-27 | 日立オートモティブシステムズ株式会社 | 電子機器及び電子機器の製造方法 |
CN115841996A (zh) * | 2022-09-30 | 2023-03-24 | 浙江大学杭州国际科创中心 | 一种基于金属骨架相变材料的热缓冲功率模块及其制作方法 |
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JPH0260150A (ja) * | 1988-08-26 | 1990-02-28 | Semiconductor Energy Lab Co Ltd | 電子装置およびその作製方法 |
JP2001308245A (ja) * | 2000-04-25 | 2001-11-02 | Denso Corp | 冷媒冷却型両面冷却半導体装置 |
JP2001308237A (ja) * | 2000-04-19 | 2001-11-02 | Denso Corp | 両面冷却型半導体カ−ドモジュ−ル及びそれを用いた冷媒間接冷却型半導体装置 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0260150A (ja) * | 1988-08-26 | 1990-02-28 | Semiconductor Energy Lab Co Ltd | 電子装置およびその作製方法 |
JP2001308237A (ja) * | 2000-04-19 | 2001-11-02 | Denso Corp | 両面冷却型半導体カ−ドモジュ−ル及びそれを用いた冷媒間接冷却型半導体装置 |
JP2001308245A (ja) * | 2000-04-25 | 2001-11-02 | Denso Corp | 冷媒冷却型両面冷却半導体装置 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010287651A (ja) * | 2009-06-10 | 2010-12-24 | Nissan Motor Co Ltd | 半導体装置 |
JP2013105884A (ja) * | 2011-11-14 | 2013-05-30 | Denso Corp | 半導体モジュール |
JP2015050267A (ja) * | 2013-08-30 | 2015-03-16 | 富士電機株式会社 | 半導体装置 |
JP2015208054A (ja) * | 2014-04-17 | 2015-11-19 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
WO2015186470A1 (ja) * | 2014-06-03 | 2015-12-10 | 日立オートモティブシステムズ株式会社 | 半導体モジュールおよび半導体モジュールの製造方法ならびに電子制御装置 |
JP2015230913A (ja) * | 2014-06-03 | 2015-12-21 | 日立オートモティブシステムズ株式会社 | 半導体モジュールおよび半導体モジュールの製造方法ならびに電子制御装置 |
JPWO2016067930A1 (ja) * | 2014-10-29 | 2017-07-27 | 日立オートモティブシステムズ株式会社 | 電子機器及び電子機器の製造方法 |
US10128164B2 (en) | 2014-10-29 | 2018-11-13 | Hitachi Automotive Systems, Ltd. | Electronic device and method of manufacturing the electronic device |
CN115841996A (zh) * | 2022-09-30 | 2023-03-24 | 浙江大学杭州国际科创中心 | 一种基于金属骨架相变材料的热缓冲功率模块及其制作方法 |
CN115841996B (zh) * | 2022-09-30 | 2023-09-15 | 浙江大学杭州国际科创中心 | 一种基于金属骨架相变材料的热缓冲功率模块及其制作方法 |
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