JP4648995B2 - 型およびその製造方法 - Google Patents
型およびその製造方法 Download PDFInfo
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- JP4648995B2 JP4648995B2 JP2010542475A JP2010542475A JP4648995B2 JP 4648995 B2 JP4648995 B2 JP 4648995B2 JP 2010542475 A JP2010542475 A JP 2010542475A JP 2010542475 A JP2010542475 A JP 2010542475A JP 4648995 B2 JP4648995 B2 JP 4648995B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 121
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 121
- 239000000758 substrate Substances 0.000 claims description 64
- 239000011521 glass Substances 0.000 claims description 45
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 37
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 36
- 239000001301 oxygen Substances 0.000 claims description 36
- 229910052760 oxygen Inorganic materials 0.000 claims description 36
- 150000007529 inorganic bases Chemical class 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 20
- 238000007743 anodising Methods 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000004033 plastic Substances 0.000 claims description 14
- 229920003023 plastic Polymers 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 247
- 239000002585 base Substances 0.000 description 59
- 239000011148 porous material Substances 0.000 description 33
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 31
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 28
- 230000000052 comparative effect Effects 0.000 description 21
- 239000002985 plastic film Substances 0.000 description 21
- 229920006255 plastic film Polymers 0.000 description 21
- 229910004298 SiO 2 Inorganic materials 0.000 description 17
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 14
- 238000001878 scanning electron micrograph Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000007654 immersion Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000005361 soda-lime glass Substances 0.000 description 6
- 229910052783 alkali metal Inorganic materials 0.000 description 5
- 238000002048 anodisation reaction Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 150000001340 alkali metals Chemical class 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 229910052809 inorganic oxide Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- DJLCOAPFZCDZQW-UHFFFAOYSA-N chromium phosphoric acid Chemical compound [Cr].OP(O)(O)=O DJLCOAPFZCDZQW-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
- B29C33/3814—Porous moulds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
- B29C33/424—Moulding surfaces provided with means for marking or patterning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/12—Anodising more than once, e.g. in different baths
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/24—Chemical after-treatment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Laminated Bodies (AREA)
- Surface Treatment Of Optical Elements (AREA)
Description
図2(a)に示した型基材10の構成を有する実施例1の型基材を以下のようにして作製した。
基板12 :ソーダライムガラス :8.7×10-6/℃、
無機下地層14 :SiO2 :1.0×10-6/℃、
緩衝層16 :Al2O3 :6.9×10-6/℃
アルミニウム層18 :Al :23×10-6/℃
上記の実施例1の型基材では、ガラス基板12を用いたのに対し、本実施例2ではプラスチックフィルム12を用いる。
12 ガラス基板(ガラス基材)またはプラスチックフィルム(プラスチック基材)
14、34 無機下地層
16、36 緩衝層
18、18a アルミニウム層
20 ポーラスアルミナ層
22 細孔
100 モスアイ用型
Claims (7)
- ガラスまたはプラスチックで形成された基材と、
前記基材の表面に形成された無機下地層と、
前記無機下地層の上に形成されたアルミニウムを含有する緩衝層と、
前記緩衝層の表面に形成されたアルミニウム層と、
前記アルミニウム層の表面に形成されたポーラスアルミナ層であって、表面の法線方向から見たときの2次元的な大きさが10nm以上500nm未満の複数の凹部を有する、反転されたモスアイ構造を表面に有するポーラスアルミナ層とを有する、型。 - 前記無機下地層は、酸化シリコン層または酸化チタン層である、請求項1に記載の型。
- 前記緩衝層は、アルミニウムと、酸素または窒素とを含み、前記アルミニウムの含有率が前記無機下地層側よりも前記ポーラスアルミナ層側において高いプロファイルを有する、請求項1または2に記載の型。
- 表面の法線方向から見たときの2次元的な大きさが10nm以上500nm未満の複数の凹部を有する、反転されたモスアイ構造を表面に有する型の製造方法であって、
(a)ガラスまたはプラスチックで形成された基材と、前記基材の表面に形成された無機下地層と、前記無機下地層の上に形成されたアルミニウムを含有する緩衝層と、前記緩衝層の表面に形成されたアルミニウム層とを有する、型基材を用意する工程と、
(b)前記アルミニウム層を部分的に陽極酸化することによって、複数の微細な凹部を有するポーラスアルミナ層を形成する工程と、
(c)前記工程(b)の後に、前記ポーラスアルミナ層を、エッチング液に接触させることによって、前記ポーラスアルミナ層の前記複数の微細な凹部を拡大させる工程と、
(d)前記工程(c)の後に、さらに陽極酸化することによって、前記複数の微細な凹部を成長させる工程と
を包含する、型の製造方法。 - 前記無機下地層は、酸化シリコン層または酸化チタン層である、請求項4に記載の型の製造方法。
- 前記緩衝層は、アルミニウムと、酸素または窒素とを含み、前記アルミニウムの含有率が前記無機下地層側よりも前記アルミニウム層側において高いプロファイルを有する、請求項4または5に記載の型の製造方法。
- 前記工程(d)の後に、前記工程(b)および前記工程(c)をさらに行う、請求項4から6のいずれかに記載の型の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009095267 | 2009-04-09 | ||
JP2009095267 | 2009-04-09 | ||
PCT/JP2010/002518 WO2010116728A1 (ja) | 2009-04-09 | 2010-04-06 | 型およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4648995B2 true JP4648995B2 (ja) | 2011-03-09 |
JPWO2010116728A1 JPWO2010116728A1 (ja) | 2012-10-18 |
Family
ID=42936023
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JP2010542475A Active JP4648995B2 (ja) | 2009-04-09 | 2010-04-06 | 型およびその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8580135B2 (ja) |
EP (1) | EP2418305B1 (ja) |
JP (1) | JP4648995B2 (ja) |
CN (1) | CN102227519B (ja) |
BR (1) | BRPI1010314A2 (ja) |
RU (1) | RU2482221C1 (ja) |
WO (1) | WO2010116728A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5511313B2 (ja) * | 2008-11-07 | 2014-06-04 | キヤノン株式会社 | 光学素子成形用金型、光学素子成形用金型の製造方法、光学素子、および光学素子の製造方法 |
BRPI1011897A2 (pt) * | 2009-04-30 | 2016-04-12 | Sharp Kk | "molde e método de fabricação do mesmo" |
CN102791909B (zh) | 2010-03-09 | 2015-05-20 | 夏普株式会社 | 阳极氧化层的形成方法、模具的制造方法以及防反射膜的制造方法 |
US9556532B2 (en) | 2010-03-31 | 2017-01-31 | Sharp Kabushiki Kaisha | Die, process for producing die, and process for producing antireflection film |
JP5027347B2 (ja) * | 2010-04-28 | 2012-09-19 | シャープ株式会社 | 型および型の製造方法 |
CN103154329B (zh) * | 2010-10-08 | 2015-09-16 | 夏普株式会社 | 阳极氧化膜的制造方法 |
WO2012057073A1 (ja) * | 2010-10-25 | 2012-05-03 | シャープ株式会社 | 太陽熱集熱部材およびその作製方法 |
KR20120088920A (ko) * | 2011-02-01 | 2012-08-09 | 삼성전기주식회사 | 터치패널 |
JP5615971B2 (ja) * | 2011-04-01 | 2014-10-29 | シャープ株式会社 | 型の製造方法 |
CN103688193B (zh) * | 2011-05-17 | 2016-05-04 | 佳能电子株式会社 | 光学滤波器、光学设备、电子设备和防反射复合体 |
CN102517620B (zh) * | 2011-12-06 | 2014-12-17 | 中国科学院宁波材料技术与工程研究所 | 一种渐变折射率减反射膜的制备方法 |
WO2013183576A1 (ja) | 2012-06-06 | 2013-12-12 | シャープ株式会社 | 型基材、型基材の製造方法、型の製造方法および型 |
CN103898447A (zh) * | 2012-12-29 | 2014-07-02 | 深圳富泰宏精密工业有限公司 | 不锈钢表面处理方法及由该方法制得的外壳 |
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2010
- 2010-04-06 CN CN201080003284.XA patent/CN102227519B/zh active Active
- 2010-04-06 EP EP10761432.3A patent/EP2418305B1/en not_active Not-in-force
- 2010-04-06 RU RU2011145304/02A patent/RU2482221C1/ru active
- 2010-04-06 US US13/263,459 patent/US8580135B2/en active Active
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- 2010-04-06 JP JP2010542475A patent/JP4648995B2/ja active Active
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Also Published As
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EP2418305A4 (en) | 2013-01-02 |
CN102227519B (zh) | 2014-07-02 |
WO2010116728A1 (ja) | 2010-10-14 |
EP2418305A1 (en) | 2012-02-15 |
US20120018613A1 (en) | 2012-01-26 |
CN102227519A (zh) | 2011-10-26 |
JPWO2010116728A1 (ja) | 2012-10-18 |
BRPI1010314A2 (pt) | 2016-03-15 |
EP2418305B1 (en) | 2016-09-28 |
US8580135B2 (en) | 2013-11-12 |
RU2482221C1 (ru) | 2013-05-20 |
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