JP5027346B2 - 型および型の製造方法ならびに反射防止膜の製造方法 - Google Patents
型および型の製造方法ならびに反射防止膜の製造方法 Download PDFInfo
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
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- 239000011733 molybdenum Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
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- 229910018464 Al—Mg—Si Inorganic materials 0.000 description 1
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- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- DJLCOAPFZCDZQW-UHFFFAOYSA-N chromium phosphoric acid Chemical compound [Cr].OP(O)(O)=O DJLCOAPFZCDZQW-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
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- 238000007790 scraping Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/045—Anodisation of aluminium or alloys based thereon for forming AAO templates
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/12—Anodising more than once, e.g. in different baths
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/24—Chemical after-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0827—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/04—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing using rollers or endless belts
- B29C59/046—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing using rollers or endless belts for layered or coated substantially flat surfaces
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Surface Treatment Of Optical Elements (AREA)
- ing And Chemical Polishing (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Description
実施例1〜5では、図1を参照して上述したモスアイ用型の製造方法により、モスアイ用型を作製した。また、モスアイ用型を用いて、反射防止膜を作製し、得られた反射防止膜の反射率を調べた。
実施例6では、図11を参照して上述した方法により、モスアイ用型を作製した。
実施例7では、アルミニウム基材に代えて金属製の基材を有する型基材を用いて、図11を参照して上述した方法により、モスアイ用型を作製した。
比較例1では、アルミニウム基材の表面を直接陽極酸化およびエッチングすることによりモスアイ用型を作製した。比較例1では、アルミニウム基材として、実施例1〜3と同じアルミニウム板を用いた。陽極酸化条件(液温、陽極酸化時間)も実施例1〜3と同じとし、エッチング条件は、実施例2と同じとした。陽極酸化およびエッチングを交互に5回(陽極酸化を5回、エッチングを4回)繰り返し、モスアイ用型を作製した。
12 アルミニウム基材
14 ポーラスアルミナ層
14p 細孔(微細な凹部)
16 無機材料層
18 アルミニウム膜
18s アルミニウム膜の表面
100、100b 型
Claims (12)
- 表面にポーラスアルミナ層を有する型の製造方法であって、
(a)バイト研削が施されている表面を有するアルミニウム基材と、前記アルミニウム基材の前記表面に堆積された純度が99.99質量%以上であるアルミニウム膜とを有する型基材を用意する工程と、
(b)前記工程(a)の後に、前記アルミニウム膜の表面を陽極酸化することによって、複数の微細な凹部を有するポーラスアルミナ層を形成する工程と、
(c)前記工程(b)の後に、前記ポーラスアルミナ層をエッチング液に接触させることによって、前記ポーラスアルミナ層の前記複数の微細な凹部を拡大させる工程とを包含する、型の製造方法。 - 前記工程(b)は、前記アルミニウム膜に、結晶粒間の空隙が存在する場合に、前記アルミニウム基材の前記表面のうち、前記結晶粒間の空隙の下に存在する部分を陽極酸化することにより、前記部分に陽極酸化膜を形成する工程を含む、請求項1に記載の型の製造方法。
- 前記アルミニウム基材は、円筒状のアルミニウム管である、請求項1または2に記載の型の製造方法。
- 表面にポーラスアルミナ層を有する型の製造方法であって、
(a)金属製の基材と、前記金属製の基材の表面に設けられた無機材料層と、前記無機材料層の上に堆積された純度が99.99質量%以上であるアルミニウム膜とを有する型基材を用意する工程と、
(b)前記工程(a)の後に、前記アルミニウム膜の表面を陽極酸化することによって、複数の微細な凹部を有するポーラスアルミナ層を形成する工程と、
(c)前記工程(b)の後に、前記ポーラスアルミナ層をエッチング液に接触させることによって、前記ポーラスアルミナ層の前記複数の微細な凹部を拡大させる工程とを包含する、型の製造方法。 - 前記金属製の基材はアルミニウム基材である、請求項4に記載の型の製造方法。
- 前記工程(b)は、前記アルミニウム膜に結晶粒間の空隙が存在し、前記無機材料層にピンホールが存在し、前記結晶粒間の空隙と前記ピンホールとが厚さ方向に重なっている場合に、前記金属製の基材の前記表面のうち、前記結晶粒間の空隙および前記ピンホールの下に存在する部分を陽極酸化することにより、前記部分に陽極酸化膜を形成する工程を含む、請求項4または5に記載の型の製造方法。
- 前記無機材料層の厚さは、500nm以上である、請求項4から6のいずれかに記載の型の製造方法。
- 前記金属製の基材の表面は、バイト研削が施されている、請求項4から7のいずれかに記載の型の製造方法。
- 前記金属製の基材は円筒状である、請求項4から8のいずれかに記載の型の製造方法。
- 前記ポーラスアルミナ層は、表面の法線方向から見たときの2次元的な大きさが50nm以上500nm未満の複数の凹部を有し、
(d)前記工程(c)の後に、さらに陽極酸化することによって、前記複数の微細な凹部を成長させる工程をさらに包含し、
前記工程(d)の後に、前記工程(c)および(d)をさらに行う、請求項1から9のいずれかに記載の型の製造方法。 - 請求項1から10のいずれかに記載の製造方法により作製された型であって、
表面の法線方向から見たときの2次元的な大きさが50nm以上500nm未満である複数の微細な凹部を有する、反転されたモスアイ構造を表面に有するポーラスアルミナ層を有する、型。 - 請求項11に記載の型と、被加工物とを用意する工程と、
前記型と前記被加工物の表面との間に紫外線硬化樹脂を付与した状態で、前記紫外線硬化樹脂に紫外線を照射することによって前記紫外線硬化樹脂を硬化する工程と
を包含する、反射防止膜の製造方法。
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Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5083438B1 (ja) * | 2011-08-18 | 2012-11-28 | 大日本印刷株式会社 | 反射防止フィルム製造用金型の製造方法 |
JP2013112892A (ja) * | 2011-12-01 | 2013-06-10 | Dnp Fine Chemicals Co Ltd | ナノ構造体作製用型体の製造方法、製造装置、ナノ構造体作製用型体及びナノ構造体 |
CN103308960B (zh) * | 2012-03-14 | 2016-09-14 | 鸿富锦精密工业(深圳)有限公司 | 光学膜及其制备方法 |
KR101879827B1 (ko) * | 2013-08-14 | 2018-07-18 | 미쯔비시 케미컬 주식회사 | 나노임프린트용 몰드의 제조방법 및 반사방지물품 |
CN106062257B (zh) * | 2014-02-28 | 2018-01-23 | 夏普株式会社 | 模具的再利用方法 |
JP6309081B2 (ja) * | 2014-04-14 | 2018-04-11 | シャープ株式会社 | 型の製造方法および反射防止膜の製造方法 |
CN105209238B (zh) | 2014-04-22 | 2018-08-10 | 夏普株式会社 | 合成高分子膜、具有合成高分子膜的层叠体、杀菌方法及合成高分子膜的表面的再活化方法 |
US10071175B2 (en) | 2014-04-28 | 2018-09-11 | Sharp Kabushiki Kaisha | Filter and container having microbicidal activity |
US10107574B2 (en) | 2014-08-07 | 2018-10-23 | Sharp Kabushiki Kaisha | Heat exchanger including fins with surface having bactericidal activity, metallic member with surface having bactericidal activity, method for inhibiting mold growth and sterilization method both using surface of fins of heat exchanger or surface of metallic member, and electrical water boiler, beverage supplier, and lunch box lid all including metallic member |
WO2016072362A1 (ja) * | 2014-11-06 | 2016-05-12 | シャープ株式会社 | 型の製造方法および反射防止膜の製造方法 |
WO2016076239A1 (ja) * | 2014-11-12 | 2016-05-19 | シャープ株式会社 | 型の製造方法 |
CN106133033B (zh) | 2014-11-20 | 2019-10-25 | 夏普株式会社 | 具有具备杀菌作用的表面的合成高分子膜 |
CN107002272B (zh) * | 2014-11-21 | 2021-10-26 | 夏普株式会社 | 模具、模具的制造方法、防反射膜及防反射膜的制造方法 |
US10980255B2 (en) | 2014-12-25 | 2021-04-20 | Sharp Kabushiki Kaisha | Food preservation method, food film, food container, and food handling method |
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GB2543514B (en) * | 2015-10-20 | 2020-04-01 | Ecorenew Dmcc | A Method for Preserving a Mark on a Metallic Workpiece |
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WO2018180421A1 (ja) | 2017-03-29 | 2018-10-04 | シャープ株式会社 | 光学装置用ケースおよび光学装置 |
US20210127952A1 (en) * | 2017-08-01 | 2021-05-06 | Seed Co., Ltd. | Endoscope hood |
EP3459353B1 (en) | 2017-09-26 | 2022-04-20 | Sharp Kabushiki Kaisha | Synthetic polymer film whose surface has microbicidal activity, photocurable resin composition, manufacturing method of synthetic polymer film, and sterilization method with use of surface of synthetic polymer film |
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JP6761437B2 (ja) | 2018-03-15 | 2020-09-23 | シャープ株式会社 | 殺菌作用を備えた表面を有する合成高分子膜、合成高分子膜を有するプラスチック製品、合成高分子膜の表面を用いた殺菌方法、光硬化性樹脂組成物、および合成高分子膜の製造方法 |
CN112888353A (zh) | 2018-10-10 | 2021-06-01 | 夏普株式会社 | 内窥镜前端部罩以及内窥镜 |
CN113802163B (zh) * | 2021-08-18 | 2023-02-17 | 陕西师范大学 | 一种氧化铝微米阶梯与纳米孔复合结构的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58217697A (ja) * | 1982-06-11 | 1983-12-17 | Daiwa Seiko Inc | アルミダイカスト製品のアルマイト処理法 |
JP2003342791A (ja) * | 2002-03-15 | 2003-12-03 | Canon Inc | 細孔を有する構造体及びその製造方法 |
JP2004107770A (ja) * | 2002-09-20 | 2004-04-08 | Fuji Photo Film Co Ltd | 酸化皮膜付き金属板およびその製造方法 |
WO2009054513A1 (ja) * | 2007-10-25 | 2009-04-30 | Mitsubishi Rayon Co., Ltd. | スタンパとその製造方法、成形体の製造方法、およびスタンパ用のアルミニウム原型 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0931859B1 (en) * | 1996-08-26 | 2008-06-04 | Nippon Telegraph And Telephone Corporation | Method of manufacturing porous anodized alumina film |
DE19708776C1 (de) | 1997-03-04 | 1998-06-18 | Fraunhofer Ges Forschung | Entspiegelungsschicht sowie Verfahren zur Herstellung derselben |
US7066234B2 (en) * | 2001-04-25 | 2006-06-27 | Alcove Surfaces Gmbh | Stamping tool, casting mold and methods for structuring a surface of a work piece |
DE10020877C1 (de) | 2000-04-28 | 2001-10-25 | Alcove Surfaces Gmbh | Prägewerkzeug, Verfahren zum Herstellen desselben, Verfahren zur Strukturierung einer Oberfläche eines Werkstücks und Verwendung einer anodisch oxidierten Oberflächenschicht |
US6972146B2 (en) * | 2002-03-15 | 2005-12-06 | Canon Kabushiki Kaisha | Structure having holes and method for producing the same |
JP4406553B2 (ja) | 2003-11-21 | 2010-01-27 | 財団法人神奈川科学技術アカデミー | 反射防止膜の製造方法 |
US20070235342A1 (en) * | 2004-10-01 | 2007-10-11 | Canon Kabushiki Kaisha | Method for manufacturing nanostructure |
WO2006059686A1 (ja) | 2004-12-03 | 2006-06-08 | Sharp Kabushiki Kaisha | 反射防止材、光学素子、および表示装置ならびにスタンパの製造方法およびスタンパを用いた反射防止材の製造方法 |
KR101214663B1 (ko) * | 2006-06-30 | 2012-12-21 | 카나가와 아카데미 오브 사이언스 앤드 테크놀로지 | 주형, 주형의 제조 방법 및 시트의 제조 방법 |
US7655127B2 (en) * | 2006-11-27 | 2010-02-02 | 3M Innovative Properties Company | Method of fabricating thin film transistor |
EP2246177B1 (en) * | 2008-02-27 | 2018-06-06 | Sharp Kabushiki Kaisha | Roller type nano-imprint device, mold roll for the roller type nano-imprint device, fixed roll for the roller type nano-imprint device, and nano-imprint sheet manufacturing method |
RU2482221C1 (ru) | 2009-04-09 | 2013-05-20 | Шарп Кабусики Кайся | Форма и способ ее изготовления |
CN102770254B (zh) | 2010-02-24 | 2014-12-03 | 夏普株式会社 | 模具和模具的制造方法以及防反射膜的制造方法 |
-
2011
- 2011-03-22 JP JP2012509399A patent/JP5027346B2/ja active Active
- 2011-03-22 EP EP11765387.3A patent/EP2554717B1/en active Active
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- 2011-03-22 WO PCT/JP2011/056832 patent/WO2011125486A1/ja active Application Filing
- 2011-03-30 TW TW100111089A patent/TWI443228B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58217697A (ja) * | 1982-06-11 | 1983-12-17 | Daiwa Seiko Inc | アルミダイカスト製品のアルマイト処理法 |
JP2003342791A (ja) * | 2002-03-15 | 2003-12-03 | Canon Inc | 細孔を有する構造体及びその製造方法 |
JP2004107770A (ja) * | 2002-09-20 | 2004-04-08 | Fuji Photo Film Co Ltd | 酸化皮膜付き金属板およびその製造方法 |
WO2009054513A1 (ja) * | 2007-10-25 | 2009-04-30 | Mitsubishi Rayon Co., Ltd. | スタンパとその製造方法、成形体の製造方法、およびスタンパ用のアルミニウム原型 |
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