JP4642030B2 - 半導体装置及びその制御方法 - Google Patents
半導体装置及びその制御方法 Download PDFInfo
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- JP4642030B2 JP4642030B2 JP2006539081A JP2006539081A JP4642030B2 JP 4642030 B2 JP4642030 B2 JP 4642030B2 JP 2006539081 A JP2006539081 A JP 2006539081A JP 2006539081 A JP2006539081 A JP 2006539081A JP 4642030 B2 JP4642030 B2 JP 4642030B2
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously
Description
Claims (7)
- データ読み出し及びベリファイモードで同時に動作可能な半導体装置であって、
各々が複数のメモリセルを有する複数のバンクを有する内部回路と、
前記複数のバンクに共通に設けられ前記データ読み出しモードにおいて前記内部回路を接地する第1のグランド配線と、
前記複数のバンクに共通に設けられるとともに前記第1のグランド配線と独立に設けられ、前記ベリファイモードにおいて前記内部回路を接地する第2のグランド配線とを備え 前記複数のバンクのうちの第1のバンクが前記データ読み出しモードで動作し、前複数のバンクの第2のバンクが並行してライトモードで動作し、
前記第1のバンクが前記第1のグランド配線に接続されてメモリセルソース電位を受け、前記第2のバンクが前記ライトモードにおける前記ベリファイモード時に前記第2のグランド配線に接続されてメモリセルのソース電位を受ける、半導体装置。 - 前記半導体装置は、前記第1のグランド配線に接続された第1のグランド端子と、前記第2のグランド配線に接続された第2のグランド端子とを有する請求項1記載の半導体装置。
- 前記第1のグランド配線と前記第2のグランド配線とは略等しい長さを有する請求項1又は2記載の半導体装置。
- 前記半導体装置は、前記複数のバンクを選択的に前記第1及び第2のグランド配線に接続するスイッチを有する請求項1から3のいずれか一項記載の半導体装置。
- 前記複数のバンクはそれぞれ、複数の不揮発性メモリセルを含む請求項1記載の半導体装置。
- 前記半導体装置は不揮発性半導体記憶装置である請求項1から5のいずれか一項記載の半導体装置。
- 複数のバンクを含み、データ読み出しモードおよびベリファイモードを含むライトモードで同時に動作可能な半導体装置の制御方法であって、
前記データ読み出しモードにおいて前記複数のバンクの1つの第1のバンクを前記複数のバンクに共通に設けられる第1のグランド配線を介して接地してメモリセルソース電位を供給するステップと、
前記ベリファイモードにおいて前記複数のバンクの第2のバンクを、前記第1のグランド配線とは独立にかつ前記複数のバンクに共通に設けられた第2のグランド配線を介して接地してメモリセルソース電位を供給するステップとを有する方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/014326 WO2006038249A1 (ja) | 2004-09-30 | 2004-09-30 | 半導体装置及びその制御方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2006038249A1 JPWO2006038249A1 (ja) | 2008-05-15 |
JP4642030B2 true JP4642030B2 (ja) | 2011-03-02 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006539081A Active JP4642030B2 (ja) | 2004-09-30 | 2004-09-30 | 半導体装置及びその制御方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7307893B2 (ja) |
JP (1) | JP4642030B2 (ja) |
WO (1) | WO2006038249A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03155667A (ja) * | 1988-11-23 | 1991-07-03 | Natl Semiconductor Corp <Ns> | フラッシュ消去epromメモリ用の新規なアーキテクチャー |
JP2000207891A (ja) * | 1999-01-11 | 2000-07-28 | Toshiba Corp | 半導体記憶装置 |
JP2003123493A (ja) * | 2001-10-12 | 2003-04-25 | Fujitsu Ltd | ソース電位を制御してプログラム動作を最適化した不揮発性メモリ |
JP2004039184A (ja) * | 2002-07-08 | 2004-02-05 | Fujitsu Ltd | 半導体記憶装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL296214A (ja) * | 1961-02-15 | |||
JPH03148827A (ja) | 1989-11-06 | 1991-06-25 | Nec Ic Microcomput Syst Ltd | 半導体集積回路 |
US5526305A (en) * | 1994-06-17 | 1996-06-11 | The United States Of America As Represented By The Secretary Of The Air Force | Two-transistor dynamic random-access memory cell |
KR0164814B1 (ko) * | 1995-01-23 | 1999-02-01 | 김광호 | 반도체 메모리장치의 전압 구동회로 |
US5757816A (en) * | 1996-10-24 | 1998-05-26 | Advanced Micro Devices, Inc. | IDDQ testing of integrated circuits |
US5973985A (en) * | 1998-08-11 | 1999-10-26 | Stmicroelectronics, Inc. | Dual port SRAM cell having pseudo ground line or pseudo power line |
US6181604B1 (en) * | 1999-07-22 | 2001-01-30 | Macronix International Co., Ltd. | Method for fast programming of EPROMS and multi-level flash EPROMS |
US6418046B1 (en) * | 2001-01-30 | 2002-07-09 | Motorola, Inc. | MRAM architecture and system |
JP2006183499A (ja) * | 2004-12-27 | 2006-07-13 | Hitachi Ltd | 容積形圧縮機 |
KR100802016B1 (ko) * | 2005-02-25 | 2008-02-12 | 삼성전자주식회사 | 용량가변 압축기 및 그 기동운전방법 |
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2004
- 2004-09-30 WO PCT/JP2004/014326 patent/WO2006038249A1/ja active Application Filing
- 2004-09-30 JP JP2006539081A patent/JP4642030B2/ja active Active
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2005
- 2005-09-16 US US11/228,976 patent/US7307893B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03155667A (ja) * | 1988-11-23 | 1991-07-03 | Natl Semiconductor Corp <Ns> | フラッシュ消去epromメモリ用の新規なアーキテクチャー |
JP2000207891A (ja) * | 1999-01-11 | 2000-07-28 | Toshiba Corp | 半導体記憶装置 |
JP2003123493A (ja) * | 2001-10-12 | 2003-04-25 | Fujitsu Ltd | ソース電位を制御してプログラム動作を最適化した不揮発性メモリ |
JP2004039184A (ja) * | 2002-07-08 | 2004-02-05 | Fujitsu Ltd | 半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2006038249A1 (ja) | 2008-05-15 |
WO2006038249A1 (ja) | 2006-04-13 |
US20060109711A1 (en) | 2006-05-25 |
US7307893B2 (en) | 2007-12-11 |
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