JP4638030B2 - セルフアライメントコンタクトホールを形成するためのエッチング方法 - Google Patents

セルフアライメントコンタクトホールを形成するためのエッチング方法 Download PDF

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Publication number
JP4638030B2
JP4638030B2 JP2000526965A JP2000526965A JP4638030B2 JP 4638030 B2 JP4638030 B2 JP 4638030B2 JP 2000526965 A JP2000526965 A JP 2000526965A JP 2000526965 A JP2000526965 A JP 2000526965A JP 4638030 B2 JP4638030 B2 JP 4638030B2
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JP
Japan
Prior art keywords
etching
nitride
layer
contact hole
oxide
Prior art date
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Expired - Fee Related
Application number
JP2000526965A
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English (en)
Japanese (ja)
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JP2002500442A (ja
JP2002500442A5 (https=
Inventor
フラナー・ジャネット・エム．
マークウェツ・リンダ・エヌ．
クック・ジョエル・エム．
モリー・イアン・ジェイ．
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Lam Research Corp
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Lam Research Corp
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Publication of JP2002500442A publication Critical patent/JP2002500442A/ja
Publication of JP2002500442A5 publication Critical patent/JP2002500442A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000526965A 1997-12-29 1998-12-11 セルフアライメントコンタクトホールを形成するためのエッチング方法 Expired - Fee Related JP4638030B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/998,954 1997-12-29
US08/998,954 US6165910A (en) 1997-12-29 1997-12-29 Self-aligned contacts for semiconductor device
PCT/US1998/026503 WO1999034426A1 (en) 1997-12-29 1998-12-11 Self-aligned contacts for semiconductor device

Publications (3)

Publication Number Publication Date
JP2002500442A JP2002500442A (ja) 2002-01-08
JP2002500442A5 JP2002500442A5 (https=) 2006-06-08
JP4638030B2 true JP4638030B2 (ja) 2011-02-23

Family

ID=25545701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000526965A Expired - Fee Related JP4638030B2 (ja) 1997-12-29 1998-12-11 セルフアライメントコンタクトホールを形成するためのエッチング方法

Country Status (7)

Country Link
US (1) US6165910A (https=)
EP (1) EP1042797A1 (https=)
JP (1) JP4638030B2 (https=)
KR (1) KR100595866B1 (https=)
IL (1) IL137016A (https=)
TW (1) TW399240B (https=)
WO (1) WO1999034426A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6638843B1 (en) * 2000-03-23 2003-10-28 Micron Technology, Inc. Method for forming a silicide gate stack for use in a self-aligned contact etch
US6403491B1 (en) * 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window
US6797639B2 (en) * 2000-11-01 2004-09-28 Applied Materials Inc. Dielectric etch chamber with expanded process window
US6452033B1 (en) * 2002-02-11 2002-09-17 Dow Corning Corporation Method of making N-[2-aminoethyl] aminoalkylalkoxysilanes with ethyenediamine salt recycle
KR100576463B1 (ko) * 2003-12-24 2006-05-08 주식회사 하이닉스반도체 반도체소자의 콘택 형성방법
US7164095B2 (en) * 2004-07-07 2007-01-16 Noritsu Koki Co., Ltd. Microwave plasma nozzle with enhanced plume stability and heating efficiency
US20060021980A1 (en) * 2004-07-30 2006-02-02 Lee Sang H System and method for controlling a power distribution within a microwave cavity
US7806077B2 (en) 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
US7271363B2 (en) * 2004-09-01 2007-09-18 Noritsu Koki Co., Ltd. Portable microwave plasma systems including a supply line for gas and microwaves
US7189939B2 (en) * 2004-09-01 2007-03-13 Noritsu Koki Co., Ltd. Portable microwave plasma discharge unit
US20060052883A1 (en) * 2004-09-08 2006-03-09 Lee Sang H System and method for optimizing data acquisition of plasma using a feedback control module
US7456097B1 (en) * 2004-11-30 2008-11-25 National Semiconductor Corporation System and method for faceting via top corners to improve metal fill
US7740736B2 (en) * 2006-06-08 2010-06-22 Lam Research Corporation Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
JP6521848B2 (ja) * 2015-01-16 2019-05-29 東京エレクトロン株式会社 エッチング方法
JP6550278B2 (ja) * 2015-06-24 2019-07-24 東京エレクトロン株式会社 エッチング方法
US10217707B2 (en) * 2016-09-16 2019-02-26 International Business Machines Corporation Trench contact resistance reduction

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1168762A (en) * 1981-06-22 1984-06-05 Osamu Michikami Method of fabrication for josephson tunnel junction
KR0129663B1 (ko) * 1988-01-20 1998-04-06 고다까 토시오 에칭 장치 및 방법
US4987099A (en) * 1989-12-29 1991-01-22 North American Philips Corp. Method for selectively filling contacts or vias or various depths with CVD tungsten
US4980304A (en) * 1990-02-20 1990-12-25 At&T Bell Laboratories Process for fabricating a bipolar transistor with a self-aligned contact
JPH0590221A (ja) * 1991-02-20 1993-04-09 Canon Inc 珪素化合物膜のエツチング方法及び該方法を利用した物品の形成方法
KR100297358B1 (ko) * 1991-07-23 2001-11-30 히가시 데쓰로 플라즈마에칭장치
US5286344A (en) * 1992-06-15 1994-02-15 Micron Technology, Inc. Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride
US5286667A (en) * 1992-08-11 1994-02-15 Taiwan Semiconductor Manufacturing Company Modified and robust self-aligning contact process
TW273067B (https=) * 1993-10-04 1996-03-21 Tokyo Electron Co Ltd
US5798016A (en) * 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
JPH0817796A (ja) * 1994-06-28 1996-01-19 Hitachi Ltd ドライエッチング装置とその方法および半導体装置
US5643394A (en) * 1994-09-16 1997-07-01 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
DE4444325C2 (de) 1994-12-13 1998-04-30 Gogas Goch Gmbh & Co Heizstrahler
JP3215320B2 (ja) * 1996-03-22 2001-10-02 株式会社東芝 半導体装置の製造方法
US5783496A (en) * 1996-03-29 1998-07-21 Lam Research Corporation Methods and apparatus for etching self-aligned contacts
US5843847A (en) * 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
JPH10261628A (ja) * 1996-10-24 1998-09-29 Hyundai Electron Ind Co Ltd 半導体素子のコンタクトホール製造方法
JP2988455B2 (ja) * 1997-10-15 1999-12-13 日本電気株式会社 プラズマエッチング方法

Also Published As

Publication number Publication date
JP2002500442A (ja) 2002-01-08
IL137016A0 (en) 2001-06-14
US6165910A (en) 2000-12-26
KR20010033646A (ko) 2001-04-25
TW399240B (en) 2000-07-21
IL137016A (en) 2003-05-29
WO1999034426A1 (en) 1999-07-08
KR100595866B1 (ko) 2006-07-03
EP1042797A1 (en) 2000-10-11

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