IL137016A - Self-aligned contacts for semiconductor device - Google Patents
Self-aligned contacts for semiconductor deviceInfo
- Publication number
- IL137016A IL137016A IL13701698A IL13701698A IL137016A IL 137016 A IL137016 A IL 137016A IL 13701698 A IL13701698 A IL 13701698A IL 13701698 A IL13701698 A IL 13701698A IL 137016 A IL137016 A IL 137016A
- Authority
- IL
- Israel
- Prior art keywords
- self
- semiconductor device
- aligned contacts
- aligned
- contacts
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/998,954 US6165910A (en) | 1997-12-29 | 1997-12-29 | Self-aligned contacts for semiconductor device |
| PCT/US1998/026503 WO1999034426A1 (en) | 1997-12-29 | 1998-12-11 | Self-aligned contacts for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL137016A0 IL137016A0 (en) | 2001-06-14 |
| IL137016A true IL137016A (en) | 2003-05-29 |
Family
ID=25545701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL13701698A IL137016A (en) | 1997-12-29 | 1998-12-11 | Self-aligned contacts for semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6165910A (https=) |
| EP (1) | EP1042797A1 (https=) |
| JP (1) | JP4638030B2 (https=) |
| KR (1) | KR100595866B1 (https=) |
| IL (1) | IL137016A (https=) |
| TW (1) | TW399240B (https=) |
| WO (1) | WO1999034426A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6638843B1 (en) * | 2000-03-23 | 2003-10-28 | Micron Technology, Inc. | Method for forming a silicide gate stack for use in a self-aligned contact etch |
| US6403491B1 (en) * | 2000-11-01 | 2002-06-11 | Applied Materials, Inc. | Etch method using a dielectric etch chamber with expanded process window |
| US6797639B2 (en) * | 2000-11-01 | 2004-09-28 | Applied Materials Inc. | Dielectric etch chamber with expanded process window |
| US6452033B1 (en) * | 2002-02-11 | 2002-09-17 | Dow Corning Corporation | Method of making N-[2-aminoethyl] aminoalkylalkoxysilanes with ethyenediamine salt recycle |
| KR100576463B1 (ko) * | 2003-12-24 | 2006-05-08 | 주식회사 하이닉스반도체 | 반도체소자의 콘택 형성방법 |
| US7164095B2 (en) * | 2004-07-07 | 2007-01-16 | Noritsu Koki Co., Ltd. | Microwave plasma nozzle with enhanced plume stability and heating efficiency |
| US20060021980A1 (en) * | 2004-07-30 | 2006-02-02 | Lee Sang H | System and method for controlling a power distribution within a microwave cavity |
| US7806077B2 (en) | 2004-07-30 | 2010-10-05 | Amarante Technologies, Inc. | Plasma nozzle array for providing uniform scalable microwave plasma generation |
| US7271363B2 (en) * | 2004-09-01 | 2007-09-18 | Noritsu Koki Co., Ltd. | Portable microwave plasma systems including a supply line for gas and microwaves |
| US7189939B2 (en) * | 2004-09-01 | 2007-03-13 | Noritsu Koki Co., Ltd. | Portable microwave plasma discharge unit |
| US20060052883A1 (en) * | 2004-09-08 | 2006-03-09 | Lee Sang H | System and method for optimizing data acquisition of plasma using a feedback control module |
| US7456097B1 (en) * | 2004-11-30 | 2008-11-25 | National Semiconductor Corporation | System and method for faceting via top corners to improve metal fill |
| US7740736B2 (en) * | 2006-06-08 | 2010-06-22 | Lam Research Corporation | Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber |
| JP6521848B2 (ja) * | 2015-01-16 | 2019-05-29 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6550278B2 (ja) * | 2015-06-24 | 2019-07-24 | 東京エレクトロン株式会社 | エッチング方法 |
| US10217707B2 (en) * | 2016-09-16 | 2019-02-26 | International Business Machines Corporation | Trench contact resistance reduction |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1168762A (en) * | 1981-06-22 | 1984-06-05 | Osamu Michikami | Method of fabrication for josephson tunnel junction |
| KR0129663B1 (ko) * | 1988-01-20 | 1998-04-06 | 고다까 토시오 | 에칭 장치 및 방법 |
| US4987099A (en) * | 1989-12-29 | 1991-01-22 | North American Philips Corp. | Method for selectively filling contacts or vias or various depths with CVD tungsten |
| US4980304A (en) * | 1990-02-20 | 1990-12-25 | At&T Bell Laboratories | Process for fabricating a bipolar transistor with a self-aligned contact |
| JPH0590221A (ja) * | 1991-02-20 | 1993-04-09 | Canon Inc | 珪素化合物膜のエツチング方法及び該方法を利用した物品の形成方法 |
| KR100297358B1 (ko) * | 1991-07-23 | 2001-11-30 | 히가시 데쓰로 | 플라즈마에칭장치 |
| US5286344A (en) * | 1992-06-15 | 1994-02-15 | Micron Technology, Inc. | Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride |
| US5286667A (en) * | 1992-08-11 | 1994-02-15 | Taiwan Semiconductor Manufacturing Company | Modified and robust self-aligning contact process |
| TW273067B (https=) * | 1993-10-04 | 1996-03-21 | Tokyo Electron Co Ltd | |
| US5798016A (en) * | 1994-03-08 | 1998-08-25 | International Business Machines Corporation | Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability |
| JPH0817796A (ja) * | 1994-06-28 | 1996-01-19 | Hitachi Ltd | ドライエッチング装置とその方法および半導体装置 |
| US5643394A (en) * | 1994-09-16 | 1997-07-01 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
| DE4444325C2 (de) | 1994-12-13 | 1998-04-30 | Gogas Goch Gmbh & Co | Heizstrahler |
| JP3215320B2 (ja) * | 1996-03-22 | 2001-10-02 | 株式会社東芝 | 半導体装置の製造方法 |
| US5783496A (en) * | 1996-03-29 | 1998-07-21 | Lam Research Corporation | Methods and apparatus for etching self-aligned contacts |
| US5843847A (en) * | 1996-04-29 | 1998-12-01 | Applied Materials, Inc. | Method for etching dielectric layers with high selectivity and low microloading |
| JPH10261628A (ja) * | 1996-10-24 | 1998-09-29 | Hyundai Electron Ind Co Ltd | 半導体素子のコンタクトホール製造方法 |
| JP2988455B2 (ja) * | 1997-10-15 | 1999-12-13 | 日本電気株式会社 | プラズマエッチング方法 |
-
1997
- 1997-12-29 US US08/998,954 patent/US6165910A/en not_active Expired - Lifetime
-
1998
- 1998-12-11 JP JP2000526965A patent/JP4638030B2/ja not_active Expired - Fee Related
- 1998-12-11 WO PCT/US1998/026503 patent/WO1999034426A1/en not_active Ceased
- 1998-12-11 EP EP98963141A patent/EP1042797A1/en not_active Withdrawn
- 1998-12-11 KR KR1020007007166A patent/KR100595866B1/ko not_active Expired - Lifetime
- 1998-12-11 IL IL13701698A patent/IL137016A/xx not_active IP Right Cessation
- 1998-12-14 TW TW087120754A patent/TW399240B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002500442A (ja) | 2002-01-08 |
| IL137016A0 (en) | 2001-06-14 |
| JP4638030B2 (ja) | 2011-02-23 |
| US6165910A (en) | 2000-12-26 |
| KR20010033646A (ko) | 2001-04-25 |
| TW399240B (en) | 2000-07-21 |
| WO1999034426A1 (en) | 1999-07-08 |
| KR100595866B1 (ko) | 2006-07-03 |
| EP1042797A1 (en) | 2000-10-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| MM9K | Patent not in force due to non-payment of renewal fees |