JP4633881B2 - プラズマ処理装置及びそれを用いた処理方法 - Google Patents

プラズマ処理装置及びそれを用いた処理方法 Download PDF

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Publication number
JP4633881B2
JP4633881B2 JP2000048934A JP2000048934A JP4633881B2 JP 4633881 B2 JP4633881 B2 JP 4633881B2 JP 2000048934 A JP2000048934 A JP 2000048934A JP 2000048934 A JP2000048934 A JP 2000048934A JP 4633881 B2 JP4633881 B2 JP 4633881B2
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plasma
frequency
substrate
current
probe
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JP2001237234A (ja
JP2001237234A5 (enExample
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仁 田村
誠浩 角屋
成一 渡辺
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Hitachi Ltd
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JP2000048934A 2000-02-21 2000-02-21 プラズマ処理装置及びそれを用いた処理方法 Expired - Fee Related JP4633881B2 (ja)

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JP2001237234A JP2001237234A (ja) 2001-08-31
JP2001237234A5 JP2001237234A5 (enExample) 2006-06-22
JP4633881B2 true JP4633881B2 (ja) 2011-02-16

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105578696A (zh) * 2015-12-23 2016-05-11 哈尔滨工业大学 一种测量空心阴极节流孔区等离子体密度的方法

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Publication number Priority date Publication date Assignee Title
JP3773189B2 (ja) * 2002-04-24 2006-05-10 独立行政法人科学技術振興機構 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置
JP4838736B2 (ja) * 2007-01-25 2011-12-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5162269B2 (ja) * 2008-02-08 2013-03-13 株式会社アルバック 真空処理装置
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
JP6377060B2 (ja) * 2012-08-28 2018-08-22 アドバンスト・エナジー・インダストリーズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｅｎｅｒｇｙ Ｉｎｄｕｓｔｒｉｅｓ， Ｉｎｃ． 広ダイナミックレンジイオンエネルギーバイアス制御、高速イオンエネルギー切り替え、イオンエネルギー制御およびパルスバイアス供給部、および仮想フロントパネル
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
JP6541623B2 (ja) * 2016-06-20 2019-07-10 東京エレクトロン株式会社 プラズマ処理装置、及び波形補正方法
CN111788654B (zh) 2017-11-17 2023-04-14 先进工程解决方案全球控股私人有限公司 等离子体处理系统中的调制电源的改进应用
PL3711081T3 (pl) 2017-11-17 2024-08-19 Aes Global Holdings, Pte. Ltd. Przestrzenne i czasowe sterowanie napięciem polaryzacji jonów do przetwarzania plazmowego
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
EP4231328A1 (en) 2017-11-17 2023-08-23 AES Global Holdings, Pte. Ltd. Synchronized pulsing of plasma processing source and substrate bias
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
CN117572136A (zh) * 2024-01-16 2024-02-20 国科大杭州高等研究院 适用于电推力器响应时间测量的检测系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03224226A (ja) * 1989-10-18 1991-10-03 Matsushita Electric Ind Co Ltd プラズマ加工方法およびそれに用いる装置
JPH08106992A (ja) * 1994-03-24 1996-04-23 Hitachi Ltd プラズマ処理方法およびその装置
FR2738984B1 (fr) * 1995-09-19 1997-11-21 Centre Nat Rech Scient Procede et dispositif de mesure d'un flux d'ions dans un plasma
JP2000208485A (ja) * 1999-01-11 2000-07-28 Hitachi Ltd プラズマ処理方法および装置
JP2000208295A (ja) * 1999-01-11 2000-07-28 Hitachi Ltd プラズマ計測電極およびそれを用いた計測方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105578696A (zh) * 2015-12-23 2016-05-11 哈尔滨工业大学 一种测量空心阴极节流孔区等离子体密度的方法
CN105578696B (zh) * 2015-12-23 2018-03-16 哈尔滨工业大学 一种测量空心阴极节流孔区等离子体密度的方法

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