JP4632797B2 - 半導体装置、半導体装置の製造方法 - Google Patents

半導体装置、半導体装置の製造方法 Download PDF

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JP4632797B2
JP4632797B2 JP2005013755A JP2005013755A JP4632797B2 JP 4632797 B2 JP4632797 B2 JP 4632797B2 JP 2005013755 A JP2005013755 A JP 2005013755A JP 2005013755 A JP2005013755 A JP 2005013755A JP 4632797 B2 JP4632797 B2 JP 4632797B2
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semiconductor device
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JP2006203028A5 (hu
JP2006203028A (ja
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伸治 九里
瑞枝 北田
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Shindengen Electric Manufacturing Co Ltd
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Shindengen Electric Manufacturing Co Ltd
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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2005013755A 2005-01-21 2005-01-21 半導体装置、半導体装置の製造方法 Expired - Fee Related JP4632797B2 (ja)

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JP2005013755A JP4632797B2 (ja) 2005-01-21 2005-01-21 半導体装置、半導体装置の製造方法

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JP2005013755A JP4632797B2 (ja) 2005-01-21 2005-01-21 半導体装置、半導体装置の製造方法

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JP2006203028A JP2006203028A (ja) 2006-08-03
JP2006203028A5 JP2006203028A5 (hu) 2006-11-24
JP4632797B2 true JP4632797B2 (ja) 2011-02-16

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5130843B2 (ja) * 2007-09-19 2013-01-30 富士電機株式会社 半導体装置
CN102403351A (zh) * 2010-09-14 2012-04-04 无锡华润上华半导体有限公司 沟槽型垂直双扩散晶体管

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001111050A (ja) * 1999-10-13 2001-04-20 Toyota Central Res & Dev Lab Inc 縦型半導体装置
JP2003152182A (ja) * 2001-11-14 2003-05-23 Nissan Motor Co Ltd 炭化珪素半導体装置及びその製造方法
JP2004064051A (ja) * 2002-06-05 2004-02-26 Shindengen Electric Mfg Co Ltd トランジスタとその製造方法、及びダイオード
JP2004327815A (ja) * 2003-04-25 2004-11-18 Shindengen Electric Mfg Co Ltd 半導体装置、半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2917922B2 (ja) * 1996-07-15 1999-07-12 日本電気株式会社 半導体装置及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001111050A (ja) * 1999-10-13 2001-04-20 Toyota Central Res & Dev Lab Inc 縦型半導体装置
JP2003152182A (ja) * 2001-11-14 2003-05-23 Nissan Motor Co Ltd 炭化珪素半導体装置及びその製造方法
JP2004064051A (ja) * 2002-06-05 2004-02-26 Shindengen Electric Mfg Co Ltd トランジスタとその製造方法、及びダイオード
JP2004327815A (ja) * 2003-04-25 2004-11-18 Shindengen Electric Mfg Co Ltd 半導体装置、半導体装置の製造方法

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