JP4628954B2 - 酸化物薄膜製造方法 - Google Patents

酸化物薄膜製造方法 Download PDF

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JP4628954B2
JP4628954B2 JP2005513346A JP2005513346A JP4628954B2 JP 4628954 B2 JP4628954 B2 JP 4628954B2 JP 2005513346 A JP2005513346 A JP 2005513346A JP 2005513346 A JP2005513346 A JP 2005513346A JP 4628954 B2 JP4628954 B2 JP 4628954B2
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gas
thin film
oxide thin
flow rate
substrate
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JPWO2005020311A1 (ja
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浩 西岡
雅彦 梶沼
貴一 山田
健 増田
正紀 植松
紅コウ 鄒
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Ulvac Inc
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Ulvac Inc
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
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    • H01L21/02612—Formation types
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2005513346A 2003-08-25 2004-08-25 酸化物薄膜製造方法 Expired - Lifetime JP4628954B2 (ja)

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JP2003300014 2003-08-25
JP2003300014 2003-08-25
PCT/JP2004/012180 WO2005020311A1 (ja) 2003-08-25 2004-08-25 酸化物薄膜製造方法及びその製造装置

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JP4628954B2 true JP4628954B2 (ja) 2011-02-09

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US (1) US20070054472A1 (enExample)
EP (1) EP1662556B1 (enExample)
JP (1) JP4628954B2 (enExample)
KR (2) KR101246499B1 (enExample)
CN (1) CN100435294C (enExample)
TW (1) TW200511404A (enExample)
WO (1) WO2005020311A1 (enExample)

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Publication number Priority date Publication date Assignee Title
JP2008053683A (ja) * 2006-07-27 2008-03-06 Matsushita Electric Ind Co Ltd 絶縁膜形成方法、半導体装置、および基板処理装置
KR20090042285A (ko) * 2006-08-02 2009-04-29 가부시키가이샤 아루박 막 형성방법 및 막 형성장치
JP2010080813A (ja) * 2008-09-29 2010-04-08 Fujifilm Corp 圧電体膜とその製造方法、圧電素子、及び液体吐出装置
TWI452946B (zh) * 2009-12-29 2014-09-11 Univ Nat Yunlin Sci & Tech Plasma reaction device
JP2014150191A (ja) * 2013-02-01 2014-08-21 Ulvac Japan Ltd Ｐｚｔ膜の製造方法及び成膜装置
CN106367732B (zh) * 2016-09-22 2018-11-06 四川大学 一种中温金属有机化学气相沉积TiO2-Al2O3复合涂层装置及涂覆方法
CN110586180B (zh) * 2019-09-20 2022-06-14 湖南师范大学 一种具有可见光催化n2o参与选择性氧化的钌杂化十聚钨酸季铵盐的制备方法

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JPH0883793A (ja) * 1994-06-08 1996-03-26 Hyundai Electron Ind Co Ltd 強誘電体薄膜の形成方法
JPH08268797A (ja) * 1995-03-30 1996-10-15 Hitachi Ltd 化学気相反応堆積装置
JPH11126877A (ja) * 1997-07-18 1999-05-11 Ramtron Internatl Corp 強誘電性薄膜の性能を最適化するための多層方式
JP2000058525A (ja) * 1998-08-03 2000-02-25 Nec Corp 金属酸化物誘電体膜の気相成長方法
JP2003086586A (ja) * 2001-09-13 2003-03-20 Murata Mfg Co Ltd 配向性強誘電体薄膜素子及びその製造方法
JP2003324101A (ja) * 2002-04-30 2003-11-14 Fujitsu Ltd 半導体装置の製造方法

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JPH086181B2 (ja) * 1992-11-30 1996-01-24 日本電気株式会社 化学気相成長法および化学気相成長装置
US5989998A (en) * 1996-08-29 1999-11-23 Matsushita Electric Industrial Co., Ltd. Method of forming interlayer insulating film
JPH1131650A (ja) * 1997-07-14 1999-02-02 Kokusai Electric Co Ltd 反射防止膜、被処理基板、被処理基板の製造方法、微細パターンの製造方法、および半導体装置の製造方法
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EP1662556A4 (en) 2012-05-09
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US20070054472A1 (en) 2007-03-08
WO2005020311A1 (ja) 2005-03-03
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