JP4627850B2 - Ｉｉｉ族窒化物半導体の電極形成方法 - Google Patents

Ｉｉｉ族窒化物半導体の電極形成方法 Download PDF

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JP4627850B2
JP4627850B2 JP2000270989A JP2000270989A JP4627850B2 JP 4627850 B2 JP4627850 B2 JP 4627850B2 JP 2000270989 A JP2000270989 A JP 2000270989A JP 2000270989 A JP2000270989 A JP 2000270989A JP 4627850 B2 JP4627850 B2 JP 4627850B2
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layer
forming
nitride semiconductor
group iii
electrode
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JP2001148534A5 (enExample
JP2001148534A (ja
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晋 近江
邦啓 高谷
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Sharp Corp
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  • Electrodes Of Semiconductors (AREA)
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JP2000270989A 1999-09-09 2000-09-07 Ｉｉｉ族窒化物半導体の電極形成方法 Expired - Lifetime JP4627850B2 (ja)

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JP2000270989A JP4627850B2 (ja) 1999-09-09 2000-09-07 Ｉｉｉ族窒化物半導体の電極形成方法

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JP25526899 1999-09-09
JP11-255268 1999-09-09
JP2000270989A JP4627850B2 (ja) 1999-09-09 2000-09-07 Ｉｉｉ族窒化物半導体の電極形成方法

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JP2001148534A JP2001148534A (ja) 2001-05-29
JP2001148534A5 JP2001148534A5 (enExample) 2007-10-25
JP4627850B2 true JP4627850B2 (ja) 2011-02-09

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0302580D0 (en) * 2003-02-05 2003-03-12 Univ Strathclyde MICRO LEDs
JP4703198B2 (ja) * 2005-01-24 2011-06-15 三菱電機株式会社 半導体レーザ装置およびその製造方法
JP2007027164A (ja) * 2005-07-12 2007-02-01 Rohm Co Ltd 半導体発光装置の製造方法及び半導体発光装置
WO2009072526A1 (ja) * 2007-12-04 2009-06-11 Rohm Co., Ltd. 発光素子およびその製造方法
JP4486701B1 (ja) 2008-11-06 2010-06-23 パナソニック株式会社 窒化物系半導体素子およびその製造方法
CN102511085A (zh) 2009-12-25 2012-06-20 松下电器产业株式会社 氮化物系半导体元件及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3274271B2 (ja) * 1994-03-09 2002-04-15 株式会社東芝 半導体発光素子
JP2950192B2 (ja) * 1995-04-07 1999-09-20 日亜化学工業株式会社 窒化物半導体の電極
JP3303711B2 (ja) * 1997-01-27 2002-07-22 豊田合成株式会社 素子の電極及びその製造方法
JPH11126758A (ja) * 1997-10-24 1999-05-11 Pioneer Electron Corp 半導体素子製造方法
JP3509514B2 (ja) * 1997-11-13 2004-03-22 豊田合成株式会社 窒化ガリウム系化合物半導体の製造方法

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