JP4621213B2 - マイクロチャネル技術を用いて平衡支配化学反応を実行するためのプロセス - Google Patents
マイクロチャネル技術を用いて平衡支配化学反応を実行するためのプロセス Download PDFInfo
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- JP4621213B2 JP4621213B2 JP2006553124A JP2006553124A JP4621213B2 JP 4621213 B2 JP4621213 B2 JP 4621213B2 JP 2006553124 A JP2006553124 A JP 2006553124A JP 2006553124 A JP2006553124 A JP 2006553124A JP 4621213 B2 JP4621213 B2 JP 4621213B2
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- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000009763 wire-cut EDM Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
(A)第一の反応温度および別の反応温度における反応体組成物中の出発反応体の平衡反応率値を求める工程、
(B)マイクロチャネル反応器中の第一の反応ゾーンを通して反応体組成物を第一の反応温度で流し、第一の触媒と接触させて出発反応体と所望の生成物とを含む中間生成物組成物を生成させ、第一の反応ゾーン中の出発反応体の反応率の平衡への接近率を少なくとも約5%とし、第一の反応ゾーンと熱交換器との間で熱を交換して第一の反応ゾーン内の温度を第一の反応温度に維持する工程、および
(C)マイクロチャネル反応器中の別の反応ゾーンを通して前工程からの中間生成物組成物を別の反応温度で流し、別の触媒と接触させて所望の生成物を生成させ、別の反応ゾーン中の出発反応体の反応率の平衡への接近率を少なくとも約5%とし、別の反応ゾーンと熱交換器との間で熱を交換して別の反応ゾーン内の温度を別の反応温度に維持する工程
からなる。
J=−26186J/グラムモル
I=40.51
と見積ることができる。これらの値と式(XV)とを用いて、平衡定数を温度の関数として評価することができる。
CO2反応率=(ε/n1)×100%
を用いて見いだすことができる。上記方法論は、逐次または並行に起こる任意の数の化学反応に拡張することができる。
(Gt)T,P=G(n1,n2,....nN)
であると仮定することによって、平衡組成を計算することができる。式中niは平衡で存在する化学種Iのモル数である。温度Tおよび圧力Pでの各化学種の平衡モル数を見いだす一つの方法は、ラグランジュの方法を利用することである。これは、以下のように実行することができる。
Claims (32)
- 平衡支配化学反応を実行して反応体組成物を所望の生成物に変換するためのプロセスであって、前記所望の生成物はメタノールまたはジメチルエーテルを含み、前記反応体組成物は出発反応体を含み、該出発反応体はCOであり、前記プロセスは、
(A)第一の反応温度および別の反応温度における前記反応体組成物中の前記出発反応体の平衡反応率値を求める工程、
(B)マイクロチャネル反応器中の第一の反応ゾーンを通して前記反応体組成物を前記第一の反応温度で流し、第一の触媒と接触させて前記出発反応体と前記所望の生成物とを含む中間生成物組成物を生成させる工程であって、前記第一の反応ゾーン中の前記出発反応体反応率の平衡への接近率は少なくとも5%であり、前記第一の反応ゾーン中の前記出発反応体の反応率はサイクルあたり5%から95%の範囲にあり;前記第一の反応ゾーンと熱交換器との間で熱を交換して前記第一の反応ゾーン内の温度を前記第一の反応温度に維持する工程であって、前記熱交換器は一以上の熱交換チャネルと該熱交換チャネル内の熱交換流体からなり、該熱交換流体は前記熱交換チャネル内で相変化し、および
(C)前記マイクロチャネル反応器中の別の反応ゾーンを通して前工程からの前記中間生成物組成物を前記別の反応温度で流し、別の触媒と接触させて前記所望の生成物を生成させる工程であって、前記別の反応ゾーン中の前記出発反応体の反応率の平衡への接近率は少なくとも5%であり、前記別の反応ゾーン中の前記出発反応体の反応率はサイクルあたり5%から99%の範囲にあり、前記別の反応ゾーンと前記熱交換器との間で熱を交換して前記別の反応ゾーン内の温度を前記別の反応温度に維持し、前記マイクロチャネル反応器において、前記第一の反応ゾーンと前記別の反応ゾーンは非反応性ゾーンによって分離されており、当該非反応性ゾーンにおいて前記中間生成物組成物が加熱または冷却される工程
からなるプロセス。 - 前記プロセスは、前記第一の反応温度と前記別の反応温度との間のさらに別の反応温度における前記反応体組成物中の前記出発反応体の平衡反応率値を求め、工程(B)の後であるが工程(C)の前に、前記マイクロチャネル反応器中のさらに別の反応ゾーンを通して工程(B)で生成した前記中間生成物組成物を前記さらに別の反応温度で流し、さらに別の触媒と接触させて前記出発反応体と前記所望の生成物とを含む別の中間生成物組成物を生成させ、前記さらに別の反応ゾーン中の前記出発反応体の反応率の平衡への接近率を少なくとも5%とし、前記さらに別の反応ゾーンと前記熱交換器との間で熱を交換してさらに別の反応ゾーン内の温度を前記さらに別の反応温度に維持するプロセスであり、前記さらに別の触媒は、(i)工程(B)の前記第一の触媒と同じ、(ii)工程(B)の前記第一の触媒と異なる、(iii)工程(C)の前記別の触媒と同じ、または(iv)工程(C)の前記別の触媒と異なる、請求項1に記載のプロセス。
- 前記中間生成物組成物が前記別の反応ゾーンに流入する前に、前記中間生成物組成物の温度を前記第一の反応温度から前記別の反応温度に変化させる、請求項1に記載のプロセス。
- 前記中間生成物組成物が前記さらに別の反応ゾーンに流入する前に、前記中間生成物組成物の温度を前記第一の反応温度から前記さらに別の反応温度に変化させる、請求項2に記載のプロセス。
- 前記平衡支配化学反応は発熱反応である、請求項1に記載のプロセス。
- 工程(C)の前記別の反応温度は、工程(B)の前記第一の反応温度より低い、請求項1に記載のプロセス。
- 工程(C)の前記別の反応温度は、工程(B)の前記第一の反応温度より高い、請求項1に記載のプロセス。
- 工程(B)の前記第一の触媒は、工程(C)の前記別の触媒と同じである、請求項1に記載のプロセス。
- 工程(B)の前記第一の触媒は、工程(C)の前記別の触媒と異なる、請求項1に記載のプロセス。
- 前記マイクロチャネル反応器は、複数のプロセスマイクロチャネルを備える、請求項1に記載のプロセス。
- 前記熱交換器は、少なくとも一つのプロセスマイクロチャネルに隣接する少なくとも一つの熱交換チャネルを備える、請求項10に記載のプロセス。
- 前記熱交換チャネルはマイクロチャネルを備える、請求項11に記載のプロセス。
- 前記熱交換器は、少なくとも一つのプロセスマイクロチャネルに隣接する複数の熱交換チャネルを備え、前記プロセスマイクロチャネルはそれを通って一つの方向に流れる流体を有し、前記熱交換チャネルは、それらを通って、前記プロセスマイクロチャネルを通る流体の前記流れに対して交差流となる方向に流れる流体を有する、請求項10に記載のプロセス。
- 前記プロセスマイクロチャネルは、前記熱交換チャネルを通って流れる熱交換流体と熱を交換する、請求項11に記載のプロセス。
- 前記熱交換流体は、前記熱交換チャネルを通って流れるとき相変化する、請求項14に記載のプロセス。
- 前記熱交換流体は、空気、水蒸気、液体水、二酸化炭素、気体窒素、気体炭化水素または液体炭化水素を含む、請求項14に記載のプロセス。
- 前記第一の触媒、前記別の触媒、または前記第一の触媒と前記別の触媒との両方は固体微粒子の形である、請求項1に記載のプロセス。
- 前記第一の触媒、前記別の触媒、または前記第一の触媒と前記別の触媒との両方は、前記プロセスマイクロチャネルの内壁上にウォッシュコートされるか、前記プロセスマイクロチャネルの内壁上に溶液から成長させられるか、あるいはフィン構造物上にインサイチュでコーティングされる、請求項10に記載のプロセス。
- 前記第一の触媒、前記別の触媒、または前記第一の触媒と前記別の触媒との両方は、Ni、CrおよびFeを含む合金、またはFe、Cr、AlおよびYを含む合金を含む材料で作られる担体構造物に担持される、請求項1に記載のプロセス。
- 前記第一の触媒、前記別の触媒、または前記第一の触媒と前記別の触媒との両方は、側流構成、貫通流構成または蛇行構成を有する担体構造物上に担持される、請求項1に記載のプロセス。
- 前記第一の触媒、前記別の触媒、または前記第一の触媒と前記別の触媒との両方は、発泡体、フェルト、詰め物、フィンまたはそれらの二つ以上の組み合わせの構成を有する担体構造物上に担持される、請求項1に記載のプロセス。
- 前記第一の触媒、前記別の触媒、または前記第一の触媒と前記別の触媒との両方は、少なくとも一つのフィンを備えるフィンアセンブリの形の担体構造物上に担持される、請求項1に記載のプロセス。
- 前記フィンは、Ni、CrおよびFeを含む合金、またはFe、Cr、AlおよびYを含む合金で作られる、請求項22に記載のプロセス。
- 前記プロセスマイクロチャネルは、そのようなプロセスマイクロチャネルの断面の5%から95%を含むバルク流路を有する、請求項10に記載のプロセス。
- 前記反応体組成物はH 2 とCOとを含む、請求項1に記載のプロセス。
- 前記第一の反応ゾーン中の前記反応体組成物および/または中間生成物組成物と前記触媒との接触時間は、10から500ミリ秒であり、および前記別の反応ゾーン中の前記中間生成物組成物および/または生成物と前記触媒との接触時間は、10から500ミリ秒である、請求項1に記載のプロセス。
- 前記第一の反応ゾーン内の温度は、25℃から800℃であり、および前記別の反応ゾーン内の温度は、100℃から800℃である、請求項1に記載のプロセス。
- 前記第一の反応ゾーン中の前記出発反応体の反応率の平衡への接近率は少なくとも40%であり、前記別の反応ゾーン中の前記出発反応体の反応率の平衡への接近率は少なくとも40%である、請求項1に記載のプロセス。
- 前記第一の反応ゾーン中、および前記別の反応ゾーン中の前記出発反応体の反応率の平衡への接近率は、独立に、75%から95%である、請求項1に記載のプロセス。
- 前記プロセスはメタノール合成反応を実行するためのプロセスであって、前記第一の反応ゾーン中の前記出発反応体の反応率の平衡への接近率は75%から95%であり、前記別の反応ゾーン中の前記出発反応体の反応率の平衡への接近率は75%から95%である、請求項1に記載のプロセス。
- 前記プロセスはジメチルエーテル合成反応を実行するためのプロセスであって、前記第一の反応ゾーン中のCOの反応率の平衡への接近率は75%から95%であり、前記別の反応ゾーン中のCOの反応率の平衡への接近率は75%から95%である、請求項1に記載のプロセス。
- 平衡支配化学反応を実行して反応体組成物を所望の生成物に変換するためのプロセスであって、前記反応体組成物は出発反応体を含み、前記プロセスは、
(A)第一の反応温度および別の反応温度における前記反応体組成物中の前記出発反応体の平衡反応率値を求める工程、
(B)マイクロチャネル反応器中の第一の反応ゾーンを通して前記反応体組成物を前記第一の反応温度で流し、第一の触媒と接触させて前記出発反応体と前記所望の生成物とを含む中間生成物組成物を生成させる工程であって、前記第一の反応ゾーン中の前記出発反応体反応率の平衡への接近率は少なくとも5%であり、前記第一の反応ゾーンと熱交換器との間で熱を交換して前記第一の反応ゾーン内の温度を前記第一の反応温度に維持する工程、および
(C)前記マイクロチャネル反応器中の別の反応ゾーンを通して前工程からの前記中間生成物組成物を前記別の反応温度で流し、別の触媒と接触させて前記所望の生成物を生成させる工程であって、前記別の反応ゾーン中の前記出発反応体の反応率の平衡への接近率は少なくとも5%であり;前記別の反応ゾーンと前記熱交換器との間で熱を交換して前記別の反応ゾーン内の温度を前記別の反応温度に維持する工程であって、前記第一の反応ゾーンは熱交換チャネルの第一のセットにより加熱または冷却され、および前記別の反応ゾーンは熱交換チャネルの別のセットにより加熱または冷却され、熱交換チャネルの前記第一のセットは熱交換チャネルの前記別のセットから分離されている工程において、第一の熱交換流体は熱交換チャネルの前記第一のセット内を流れて前記熱交換チャネルの前記第一のセット内で相変化し、別の熱交換流体は熱交換チャネルの前記別のセット内を流れて相変化し、前記第一の熱交換流体は前記別の熱交換流体と同一または異なる、
からなるプロセス。
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-
2004
- 2004-02-11 US US10/777,033 patent/US8747805B2/en not_active Expired - Fee Related
-
2005
- 2005-01-07 JP JP2006553124A patent/JP4621213B2/ja not_active Expired - Fee Related
- 2005-01-07 CN CN2005800046733A patent/CN1917947B/zh not_active Expired - Fee Related
- 2005-01-07 CA CA2554221A patent/CA2554221C/en not_active Expired - Fee Related
- 2005-01-07 EP EP05711317A patent/EP1722886A1/en not_active Withdrawn
- 2005-01-07 WO PCT/US2005/000623 patent/WO2005082519A1/en active Search and Examination
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US20050176832A1 (en) | 2005-08-11 |
EP1722886A1 (en) | 2006-11-22 |
CA2554221C (en) | 2012-10-09 |
WO2005082519A1 (en) | 2005-09-09 |
CA2554221A1 (en) | 2005-09-09 |
CN1917947B (zh) | 2012-01-18 |
JP2007524681A (ja) | 2007-08-30 |
CN1917947A (zh) | 2007-02-21 |
US8747805B2 (en) | 2014-06-10 |
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