JP4618856B2 - Low temperature fired porcelain - Google Patents
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Description
【０００１】
【発明の属する技術分野】
本発明は、マイクロ波，ミリ波等の高周波領域において、低い誘電率と高いＱ値を有する低温焼成磁器に関するものであり、例えば、マイクロ波やミリ波などの高周波領域において使用される種々の共振器用材料やＭＩＣ用誘電体基板材料、誘電体導波路用材料や積層型セラミックコンデンサ等に好適な低温焼成磁器に関する。
【０００２】
【従来技術】
従来、低温焼成磁器は、マイクロ波やミリ波等の高周波領域において、誘電体共振器、ＭＩＣ用誘電体基板や導波路等に広く利用されている。そして、近年においては、携帯電話をはじめとする移動体通信等の発達および普及に伴い、電子回路基板や電子部品の材料として、誘電体セラミックスの需要が増大しつつある。
【０００３】
電子回路や電子部品において、誘電体セラミックスと内部導体を同時焼成するに際しては、従来の誘電体セラミックスの焼成温度が１１００℃以上という高温であったため、導体材料としては、比較的高融点であるＰｔ、Ｐｄ、Ｗ、Ｍｏ等が使用されていた。これら高融点の導体材料は導通抵抗が大きいため、従来の電子回路基板において、共振回路やインダクタンスのＱ値が小さくなってしまい、導体線路の伝送損失が大きくなる等の問題があった。
【０００４】
そこで、係る問題点を解決すべく、導通抵抗の小さいＡｇ、Ｃｕ等と同時焼成可能な低温焼成の誘電体セラミックスが提案されている。例えば、特開平８−２０８３３０号公報に開示された低温焼成磁器組成物は、ＭｇＯ、ＣａＯ、ＴｉＯ2とからなる誘電体成分と、Ｂ2Ｏ3、Ｌｉ2ＣＯ3とからなる助剤成分とからなるものであり、９００〜１０５０℃の比較的低温でＡｇ、Ｃｕ等の内部導体と同時に焼成でき、焼成後の低温焼成磁器の比誘電率εｒが１８以上、測定周波数７ＧＨｚでのＱ値が２０００以上の優れた特性を有し、高周波電子部品の小型化と多機能化を実現できるものであった。
【０００５】
【発明が解決しようとする課題】
しかしながら特開平８−２０８３３０号公報に開示された低温焼成磁器組成物は、焼結温度がまだ高く、さらに焼結における収縮開始温度が８４５〜９６０℃と高温であるため、収縮開始温度が５００〜７００℃程度であるＡｇやＣｕを主成分とする導体材料との焼成時の収縮挙動のマッチングが悪く、焼成された誘電体基板が反る、歪む等の問題があった。また、誘電率εｒが高いため高周波用途では寄生容量が発生する等の回路上の制約が起こるという問題があった。
【０００６】
したがって、本発明は、高周波領域において適切な誘電率とＱ値、良好な耐湿性を有する低温焼成磁器を提供することを目的とするものである。
【０００７】
【課題を解決するための手段】
本発明者等は、上記問題点を解決すべく鋭意検討した結果、誘電体フィラー成分として、Ａｌ18Ｂ4Ｏ33とＭｇＴｉＯ3を用いて、これに特定のガラス成分を添加混合することによって、上記目的が達成できることを見いだし、本発明に至った。
【０００９】
本発明の低温焼成磁器は、重量比率による組成式を（１−ｘ）Ａｌ １８ Ｂ ４ Ｏ ３３ −ｘＭｇＴｉＯ ３ と表した時、前記ｘが、０．１≦ｘ≦０．６を満足する主成分１００重量部に対して、ＢをＢ ２ Ｏ ３ 換算で５〜２０重量部、ＬｉをＬｉ ２ ＣＯ ３ 換算で５〜８重量部、ＳｉをＳｉＯ ２ 換算で０〜３０重量部、Ｂａまたは、ＣａおよびＢａを酸化物換算で１〜５重量部、ＭｎをＭｎＯ ２ 換算で１〜１５重量部の割合で含有し、少なくともＡｌ１８Ｂ４Ｏ３３結晶相を含む誘電体結晶相と、少なくともＬｉ、Ｂ、アルカリ土類元素を含有するガラス相とから構成され、さらに（Ｍｇ，Ｔｉ）２（ＢＯ３）Ｏ結晶相とを含むことを特徴とする。これによってＱ値をさらに高めることができる。
また、上記誘電体磁器では、比誘電率が５〜１２で、測定周波数２ＧＨｚでのＱ値が５００以上であることが望ましい。
【００１０】
【発明の実施の形態】
本発明の低温焼成磁器を得るための低温焼成磁器組成物は、重量比率による組成式を
（１−ｘ）Ａｌ１８Ｂ４Ｏ３３−ｘＭｇＴｉＯ３と表した時、前記ｘが、０．１≦ｘ≦０．６を満足する主成分１００重量部に対して、ＢをＢ２Ｏ３換算で５〜２０重量部、ＬｉをＬｉ２ＣＯ３換算で５〜８重量部、ＳｉをＳｉＯ２換算で０〜３０重量部、Ｂａまたは、ＣａおよびＢａを酸化物換算で１〜５重量部、ＭｎをＭｎＯ２換算で１〜１５重量部添加含有してなるものである。
これにより、焼成温度を８７０〜９２０℃に、収縮開始温度を６８０〜７８０℃とすることが可能となるため、ＡｇやＣｕ等の導体金属と同時に焼成でき、その際、導体金属の収縮挙動のミスマッチから発生する基板の反りや歪みを抑制できる。
【００１１】
上記主成分組成において、ｘを０．１≦ｘ≦０．６としたのは、ｘが０．６を越える場合には、誘電率が１２を超えるためである。とりわけ低温焼成磁器の誘電率を低くするためにはｘは０．１≦ｘ≦０．３が好ましい。
【００１２】
また、上記のガラス成分において、ＢをＢ２Ｏ３換算で５〜２０重量部添加したのは、Ｂ２Ｏ３の添加量が５重量部未満の場合には１１００℃でも焼結が難しく、ＡｇまたはＣｕを主成分とする導体と同時焼成ができなくなり、逆に２０重量部を越える場合には、焼結体中のガラス相の割合が増加して、Ｑ値が低下するからである。よって、焼結性を維持し、高いＱ値を得るという観点からＢ２Ｏ３換算で５〜１５重量部が望ましい。Ｂ（硼素）を組成物中に導入するには、Ｂ ２Ｏ３ を用いる。
【００１３】
またＬｉをＬｉ２ＣＯ３換算で１〜１０重量部添加したのは、添加量が１重量部未満の場合には１１００℃でも焼結が難しく、ＡｇまたはＣｕを主成分とする導体と同時焼成ができなくなり、逆に１０重量部を越える場合には、Ｑ値が低下するからである。焼結性と低温焼成磁器のＱ値の観点から５〜８重量部とする。
【００１４】
さらにＳｉをＳｉＯ2換算で０〜３０重量部添加したのは、３０重量部を越えると、低温焼成磁器中の結晶相（Ｍｇ，Ｔｉ）2（ＢＯ3）Ｏの割合が減少してＱ値が低下するからである。低温焼成磁器のＱ値の観点からは、ＳｉＯ2は０〜１０重量部が望ましい。
【００１５】
本発明の低温焼成磁器を得るための低温焼成磁器組成物では、主成分１００重量部に対して、さらに、ＢａＯまたは、ＣａＯおよびＢａＯを１〜５重量部添加含有するものである。これらが１重量部未満の場合には、低温焼成磁器の焼結過程における収縮開始温度が約８５０℃と高く目的が達成されず、５重量部を越えると、低温焼成磁器のＱ値が低下する。とりわけ低温焼成磁器の焼結性とＱ値の観点から、ＢａＯまたは、ＣａＯおよびＢａＯは、合計１．５〜３．５重量部が好ましい。
【００１６】
またＭｎをＭｎＯ2換算で１〜１５重量部添加したのは、添加量が１重量部未満の場合には過程における収縮開始温度が約８５０℃と高く目的が達成されず、逆に１５重量部を越える場合には、Ｑ値が低下するからである。焼結性と低温焼成磁器のＱ値の観点から３〜９重量部が望ましい。
【００１７】
本発明の低温焼成磁器を得るための低温焼成磁器組成物は、原料粉末として、Ａｌ１８Ｂ４Ｏ３３、ＭｇＴｉＯ３粉末、およびＢ２Ｏ ３ 、Ｌｉ２ＣＯ３、ＳｉＯ２ 、ＢａＯまたは、ＣａＯおよびＢａＯの各粉末、もしくはこれらを含むガラスフリットを準備し、これらを上記した組成比となるように秤量し、ＺｒＯ２ボール等によって粉砕混合し、この混合粉末を６５０〜８５０℃で仮焼した後、再度ボールミルで粉砕粒径が２．５μｍ以下になるまで粉砕混合する。
【００１８】
その後、この仮焼粉末をプレス成形やドクターブレード法等の公知の方法により所定形状に成形し、大気中または酸素雰囲気中または窒素雰囲気等の非酸化性雰囲気において８７０〜９２０℃で０．５〜２時間焼成することにより得られる。
【００１９】
なお、原料粉末は、上記以外に、焼成により酸化物を生成する水酸化物、炭酸塩、硝酸塩等の金属塩を用いても良い。本発明の低温焼成磁器中には、不可避不純物としてＡｌ，Ｆｅ，Ｈｆ，Ｓｎ，Ｚｒ等が含まれることもあるが、それらは０．１重量％以下であれば特に問題はない。
【００２０】
本発明の低温焼成磁器は、少なくともＡｌ１８Ｂ４Ｏ３３結晶相を含む誘電体結晶相と、少なくともＬｉと硼素（Ｂ）を含有するガラス相とから構成され、さらには誘電体結晶相として、（Ｍｇ，Ｔｉ）２（ＢＯ３）Ｏ結晶相を含むものである。また、ガラス相中には、硼素（Ｂ）以外に、Ｌｉ、Ｓｉ、アルカリ土類元素、およびＭｎを含有する場合もある。
【００２１】
また、本発明による低温焼成磁器は、磁器の誘電体特性として、比誘電率が５．１〜１２で、測定周波数２ＧＨｚでのＱ値が５００以上、特に６００以上の優れた特性を有するものである。
【００２２】
【実施例】
原料として純度９９％以上の、Ａｌ18Ｂ4Ｏ33粉末、ＭｇＴｉＯ3粉末、およびＢ2Ｏ3、Ｌｉ2ＣＯ3、ＳｉＯ2、アルカリ土類酸化物（ＭｇＯ，ＣａＯ，ＳｒＯ，ＢａＯ）、ＭｎＯ2粉末を含むガラスフリットを、表１に示す割合となるように秤量し、純水を媒体とし、ＺｒＯ2ボールを用いたボ−ルミルにて２０時間湿式混合した。次にこの混合物を乾燥（脱水）し、８００℃で１時間仮焼した。この仮焼物を、粉砕粒径が１．４μｍ以下になるように粉砕し、誘電特性評価用の試料として直径６０ｍｍ、高さ２ｍｍの円柱状に１ｔｏｎ／ｃｍ2の圧力でプレス成形し、これを９００℃で２時間焼成し、直径５０ｍｍ、高さ１ｍｍの円柱状の試料を得た。
【００２３】
誘電特性の評価は、前記試料を用いて誘電体円柱共振器法にて周波数２ＧＨｚにおける比誘電率（εｒ）とＱ値を測定した。
【００２４】
なお、上記の焼結過程における収縮開始温度を測定した。この収縮開始温度は、プレス成形した試料をＴＭＡ（熱機械分析）にて分析を行い、その収縮カーブから測定した。
【００２５】
また、得られた低温焼成磁器について、Ｘ線回折測定を行い、検出結晶相の同定を行なった。また、結晶相の粒界に存在するガラス相を純水による煮沸によって溶出し、ガラス中の金属成分をＩＣＰ分析によって同定した。
【００２６】
さらに各組成物を用いてドクターブレード法によってグリーンシートを作製するとともに、各シートの表面にＣｕペーストまたはＡｇペーストを印刷塗布し、７層積層して、Ｃｕでは窒素雰囲気中で、Ａｇでは大気中で表２の温度で焼成して、外径サイズが、５０×５０ｍｍの多数個取りの配線基板を作製した。得られた配線基板の凹面側を平坦面に接するように載せ、平坦面との間に形成された最大高さを反り量として測定した。
【００２７】
【表１】
【表２】
この表１，２から明らかなように、本発明の組成範囲を満足する試料Ｎｏ．１、３、４１０、１１、１５、１７〜２０は、いずれも比誘電率が５．１〜１２、Ｑ値が５００以上の優れた誘電特性を有するとともに、６８０〜７８０℃で焼結収縮が開始し、９２０℃以下での焼結が可能で優れた焼結性を有していた。また、ＣｕやＡｇとの同時焼結性においても、反り量が１００μｍ以下の非常に平坦性に優れた配線基板を作製することができた。
【００３０】
【発明の効果】
以上詳述した通り、本発明によれば、高周波領域において適切な誘電率とＱ値、良好な耐湿性を有するため、電子部品や基板の小型・高性能化を実現できる。[0001]
BACKGROUND OF THE INVENTION
The present invention is a microwave, in a high frequency region such as a millimeter wave, which relates to low-temperature firing porcelain having a low dielectric constant and a high Q value, for example, various used in a high frequency region such as microwave and millimeter wave of resonator materials and MIC dielectric substrate materials, relates to a suitable low-temperature fired porcelain in the dielectric waveguide materials and laminated ceramic capacitors and the like.
[0002]
[Prior art]
Conventionally, low-temperature fired ceramics are widely used for dielectric resonators, dielectric substrates for MICs, waveguides, and the like in high-frequency regions such as microwaves and millimeter waves. In recent years, with the development and spread of mobile communications such as mobile phones, the demand for dielectric ceramics as materials for electronic circuit boards and electronic components is increasing.
[0003]
In the simultaneous firing of dielectric ceramics and internal conductors in electronic circuits and electronic parts, the firing temperature of conventional dielectric ceramics is as high as 1100 ° C. or higher, so that Pt, which has a relatively high melting point, is used as a conductor material. , Pd, W, Mo and the like have been used. Since these high melting point conductor materials have a large conduction resistance, the conventional electronic circuit board has a problem that the Q value of the resonance circuit and the inductance is reduced, and the transmission loss of the conductor line is increased.
[0004]
Therefore, in order to solve such problems, low-temperature fired dielectric ceramics that can be fired simultaneously with Ag, Cu, etc. having a low conduction resistance have been proposed. For example, low-temperature fired ceramic composition disclosed in Japanese Patent Laid-Open No. 8-208330 is, MgO, CaO, and a dielectric component comprising TiO 2 Prefecture, and auxiliary component consisting of B 2 O 3, Li 2 CO 3 Metropolitan Can be fired at the same time as an internal conductor such as Ag and Cu at a relatively low temperature of 900 to 1050 ° C., and the low-temperature fired ceramic after firing has a relative dielectric constant εr of 18 or more and a Q value at a measurement frequency of 7 GHz. It has excellent characteristics of 2000 or more and can realize miniaturization and multi-functionalization of high-frequency electronic components.
[0005]
[Problems to be solved by the invention]
However, the low-temperature fired porcelain composition disclosed in Japanese Patent Application Laid-Open No. 8-208330 has a high sintering temperature, and the shrinkage start temperature in sintering is as high as 845 to 960 ° C. There was a problem that the shrinkage matching at the time of firing with a conductor material mainly composed of Ag or Cu at about 700 ° C. was poor, and the fired dielectric substrate was warped or distorted. In addition, since the dielectric constant εr is high, there is a problem in that restrictions on the circuit such as generation of parasitic capacitance occur in high frequency applications.
[0006]
Therefore, an object of the present invention is to provide a low-temperature fired ceramic having an appropriate dielectric constant, Q value, and good moisture resistance in a high frequency region .
[0007]
[Means for Solving the Problems]
As a result of intensive studies to solve the above problems, the present inventors have used Al 18 B 4 O 33 and MgTiO 3 as dielectric filler components, and by adding and mixing specific glass components thereto, The inventors have found that the above object can be achieved, and have reached the present invention.
[0009]
The low-temperature fired ceramic according to the present invention is such that when the composition formula by weight ratio is expressed as (1-x) Al 18 B 4 O 33 -xMgTiO 3 , the x satisfies 0.1 ≦ x ≦ 0.6. With respect to 100 parts by weight of the component, B is 5 to 20 parts by weight in terms of B 2 O 3 , Li is 5 to 8 parts by weight in terms of Li 2 CO 3 , Si is 0 to 30 parts by weight in terms of SiO 2 , Ba or A dielectric crystal phase containing at least 1 to 15 parts by weight of Ca and Ba in terms of oxide, 1 to 15 parts by weight of Mn in terms of MnO 2 , and including at least an Al 18 B 4 O 33 crystal phase, li, B, is composed of a glass phase containing an alkaline-earth element, further (Mg, Ti) characterized in that it comprises a 2 (BO 3) O crystalline phase. As a result, the Q value can be further increased.
In the dielectric ceramic, it is desirable that the relative dielectric constant is 5 to 12, and the Q value at a measurement frequency of 2 GHz is 500 or more.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
The low-temperature fired ceramic composition for obtaining the low-temperature fired ceramic according to the present invention has a composition formula by weight ratio expressed as (1-x) Al 18 B 4 O 33 -xMgTiO 3, and the x is 0 . B is 5 to 20 parts by weight in terms of B 2 O 3 , Li is 5 to 8 parts by weight in terms of Li 2 CO 3 , and Si is SiO with respect to 100 parts by weight of the main component satisfying 1 ≦ x ≦ 0.6 0 to 30 parts by weight in terms of 2 , 1 to 5 parts by weight of Ba or Ca and Ba in terms of oxide, and 1 to 15 parts by weight of Mn in terms of MnO 2 are added.
As a result, the firing temperature can be set to 870 to 920 ° C., and the shrinkage start temperature can be set to 680 to 780 ° C., so that the conductor metal such as Ag or Cu can be fired simultaneously. It is possible to suppress the warpage and distortion of the substrate caused by the mismatch.
[0011]
In the above main component composition, x is 0 . The reason why 1 ≦ x ≦ 0.6 is that when x exceeds 0.6, the dielectric constant exceeds 12. In particular, in order to reduce the dielectric constant of low-temperature fired ceramics, x is 0 . 1 ≦ x ≦ 0. 3 is preferred.
[0012]
Further, the glass component of the, B and B 2 O 3 was added 5 to 20 wt parts in terms of, B 2 amount of O 3 is in the case of less than 5 parts by weight are difficult 1100 ° C. even sintering, This is because simultaneous firing with a conductor containing Ag or Cu as a main component becomes impossible and, on the contrary, when it exceeds 20 parts by weight, the ratio of the glass phase in the sintered body increases and the Q value decreases. Therefore, 5 to 15 parts by weight in terms of B 2 O 3 is desirable from the viewpoint of maintaining sinterability and obtaining a high Q value. To introduce B (boron) in the composition, Ru with B 2 O 3.
[0013]
Also, Li was added in an amount of 1 to 10 parts by weight in terms of Li 2 CO 3. When the added amount was less than 1 part by weight, sintering was difficult even at 1100 ° C., and co-firing with a conductor mainly composed of Ag or Cu. This is because the Q value decreases when the amount exceeds 10 parts by weight. From the viewpoint of sinterability and the Q value of the low-temperature fired porcelain, the content is 5 to 8 parts by weight.
[0014]
Furthermore, 0 to 30 parts by weight of Si in terms of SiO 2 is added. If the amount exceeds 30 parts by weight, the ratio of the crystalline phase (Mg, Ti) 2 (BO 3 ) O in the low-temperature fired porcelain decreases, resulting in a Q value. This is because of a decrease. From the viewpoint of the Q value of the low-temperature fired ceramic, 0 to 10 parts by weight of SiO 2 is desirable.
[0015]
The low temperature fired porcelain composition to obtain a low-temperature fired porcelain of the present invention, with respect to 100 parts by weight of the main component, further, BaO or one in which the CaO and BaO containing added 5 parts by weight. When these are less than 1 part by weight, the shrinkage start temperature in the sintering process of the low-temperature fired ceramic is as high as about 850 ° C., and the purpose is not achieved. . Especially in view of sinterability and Q values of the low-temperature fired porcelain, BaO or, CaO and BaO, the total 1.5 to 3.5 parts by weight is preferred.
[0016]
In addition, Mn was added in an amount of 1 to 15 parts by weight in terms of MnO 2. When the amount added was less than 1 part by weight, the shrinkage start temperature in the process was as high as about 850 ° C., and the purpose was not achieved. This is because the Q value decreases when the value exceeds. From the viewpoint of sinterability and the Q value of the low-temperature fired porcelain, 3 to 9 parts by weight is desirable.
[0017]
The low-temperature fired porcelain composition for obtaining the low-temperature fired porcelain of the present invention includes, as a raw material powder, Al 18 B 4 O 33 , MgTiO 3 powder, and B 2 O 3 , Li 2 CO 3 , SiO 2 , BaO or Each powder of CaO and BaO or a glass frit containing them is prepared, weighed so as to have the above composition ratio, pulverized and mixed with a ZrO 2 ball or the like, and this mixed powder was calcined at 650 to 850 ° C. After that, the mixture is pulverized and mixed again with a ball mill until the pulverized particle size becomes 2.5 μm or less.
[0018]
Thereafter, the calcined powder is molded into a predetermined shape by a known method such as press molding or a doctor blade method, and is 0.5 to 920 ° C. in a non-oxidizing atmosphere such as the air, an oxygen atmosphere, or a nitrogen atmosphere. It is obtained by baking for 2 hours.
[0019]
In addition to the above, the raw material powder may use a metal salt such as a hydroxide, carbonate, nitrate, etc. that generates an oxide by firing. The low-temperature fired porcelain of the present invention may contain Al, Fe, Hf, Sn, Zr, etc. as inevitable impurities, but there is no particular problem as long as they are 0.1% by weight or less.
[0020]
The low-temperature fired ceramic of the present invention is composed of a dielectric crystal phase including at least an Al 18 B 4 O 33 crystal phase, a glass phase containing at least Li and boron (B), and further, as a dielectric crystal phase, It includes (Mg, Ti) 2 (BO 3 ) O crystal phase. The glass phase may contain Li, Si, alkaline earth elements, and Mn in addition to boron (B).
[0021]
The low-temperature fired porcelain according to the present invention has a dielectric constant of 5 . 1 to 12, and a Q value at a measurement frequency of 2 GHz is 500 or more, particularly 600 or more.
[0022]
【Example】
Al 18 B 4 O 33 powder, MgTiO 3 powder, B 2 O 3 , Li 2 CO 3 , SiO 2 , alkaline earth oxides (MgO, CaO, SrO, BaO), MnO having a purity of 99% or more as raw materials The glass frit containing 2 powders was weighed so as to have the ratio shown in Table 1, and wet-mixed for 20 hours in a ball mill using ZrO 2 balls using pure water as a medium. The mixture was then dried (dehydrated) and calcined at 800 ° C. for 1 hour. This calcined product is pulverized so that the pulverized particle size is 1.4 μm or less, and is press-molded at a pressure of 1 ton / cm 2 into a cylindrical shape having a diameter of 60 mm and a height of 2 mm as a sample for dielectric property evaluation. Firing at 900 ° C. for 2 hours gave a columnar sample having a diameter of 50 mm and a height of 1 mm.
[0023]
For the evaluation of the dielectric characteristics, the relative permittivity (εr) and the Q value at a frequency of 2 GHz were measured by the dielectric cylindrical resonator method using the sample.
[0024]
The shrinkage start temperature in the above sintering process was measured. The shrinkage start temperature was measured from a shrinkage curve obtained by analyzing a press-molded sample by TMA (thermomechanical analysis).
[0025]
Moreover, about the obtained low-temperature baking ceramic, the X-ray-diffraction measurement was performed and the detection crystal phase was identified. Further, the glass phase present at the grain boundary of the crystal phase was eluted by boiling with pure water, and the metal component in the glass was identified by ICP analysis.
[0026]
Further, a green sheet is prepared by a doctor blade method using each composition, and a Cu paste or an Ag paste is printed and applied on the surface of each sheet, and seven layers are laminated. Cu is in a nitrogen atmosphere, and Ag is in the atmosphere. And firing at the temperature shown in Table 2 to produce a multi-piece wiring board having an outer diameter of 50 × 50 mm. The concave side of the obtained wiring board was placed in contact with the flat surface, and the maximum height formed between the flat surface and the flat surface was measured as the amount of warpage.
[0027]
[Table 1]
[Table 2]
As can be seen from Tables 1 and 2, Sample Nos. Satisfying the composition range of the present invention. 1 , 3, 4, 10 , 11 , 15 , 17-20 all have a relative dielectric constant of 5 . 1-12, along with the Q value has more than 500 excellent dielectric properties, sintering shrinkage begins at six hundred and eighty to seven hundred eighty ° C., had excellent sinterability can be sintered at 920 ° C. or less . In addition, in terms of co-sinterability with Cu and Ag, it was possible to produce a wiring board with excellent flatness with a warpage amount of 100 μm or less.
[0030]
【The invention's effect】
As described above, according to the present invention, to have a suitable dielectric constant and Q value, good moisture resistance in a high frequency region, it is possible to realize a compact and high performance of electronic components and the substrate.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000259676A JP4618856B2 (en) | 2000-08-29 | 2000-08-29 | Low temperature fired porcelain |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000259676A JP4618856B2 (en) | 2000-08-29 | 2000-08-29 | Low temperature fired porcelain |
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| JP4618856B2 true JP4618856B2 (en) | 2011-01-26 |
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| CN113880426A (en) * | 2021-11-11 | 2022-01-04 | 广东省科学院新材料研究所 | Microcrystalline glass brazing filler metal for ceramic connection, preparation method thereof and ceramic connection method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04130052A (en) * | 1990-06-13 | 1992-05-01 | Mitsui Mining Co Ltd | Starting material composition for ceramic substrate and production of substrate using the same |
| JPH11157931A (en) * | 1997-09-26 | 1999-06-15 | Kyocera Corp | High frequency dielectric ceramic and laminate |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04130052A (en) * | 1990-06-13 | 1992-05-01 | Mitsui Mining Co Ltd | Starting material composition for ceramic substrate and production of substrate using the same |
| JPH11157931A (en) * | 1997-09-26 | 1999-06-15 | Kyocera Corp | High frequency dielectric ceramic and laminate |
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