JP2002068828A - Porcelain composition sinterable at low temperature - Google Patents
Porcelain composition sinterable at low temperatureInfo
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- JP2002068828A JP2002068828A JP2000259676A JP2000259676A JP2002068828A JP 2002068828 A JP2002068828 A JP 2002068828A JP 2000259676 A JP2000259676 A JP 2000259676A JP 2000259676 A JP2000259676 A JP 2000259676A JP 2002068828 A JP2002068828 A JP 2002068828A
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、マイクロ波，ミリ
波等の高周波領域において、低い誘電率と高いＱ値を有
する低温焼成磁器組成物に関するものであり、例えば、
マイクロ波やミリ波などの高周波領域において使用され
る種々の共振器用材料やＭＩＣ用誘電体基板材料、誘電
体導波路用材料や積層型セラミックコンデンサ等に好適
な低温焼成磁器組成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-temperature fired porcelain composition having a low dielectric constant and a high Q value in a high frequency range such as microwaves and millimeter waves.
The present invention relates to a low-temperature fired porcelain composition suitable for various resonator materials, MIC dielectric substrate materials, dielectric waveguide materials, multilayer ceramic capacitors, and the like used in high-frequency regions such as microwaves and millimeter waves.
【０００２】[0002]
【従来技術】従来、低温焼成磁器は、マイクロ波やミリ
波等の高周波領域において、誘電体共振器、ＭＩＣ用誘
電体基板や導波路等に広く利用されている。そして、近
年においては、携帯電話をはじめとする移動体通信等の
発達および普及に伴い、電子回路基板や電子部品の材料
として、誘電体セラミックスの需要が増大しつつある。2. Description of the Related Art Conventionally, low-temperature fired porcelain has been widely used in dielectric resonators, MIC dielectric substrates, waveguides, and the like in high-frequency regions such as microwaves and millimeter waves. In recent years, with the development and spread of mobile communication such as mobile phones, demand for dielectric ceramics as materials for electronic circuit boards and electronic components has been increasing.
【０００３】電子回路や電子部品において、誘電体セラ
ミックスと内部導体を同時焼成するに際しては、従来の
誘電体セラミックスの焼成温度が１１００℃以上という
高温であったため、導体材料としては、比較的高融点で
あるＰｔ、Ｐｄ、Ｗ、Ｍｏ等が使用されていた。これら
高融点の導体材料は導通抵抗が大きいため、従来の電子
回路基板において、共振回路やインダクタンスのＱ値が
小さくなってしまい、導体線路の伝送損失が大きくなる
等の問題があった。In the simultaneous firing of dielectric ceramics and internal conductors in electronic circuits and electronic parts, the firing temperature of conventional dielectric ceramics was as high as 1100 ° C. or higher. , Pt, Pd, W, Mo, etc. were used. These conductive materials having a high melting point have a large conduction resistance, so that the conventional electronic circuit board has a problem that the Q value of the resonance circuit and the inductance becomes small and the transmission loss of the conductor line becomes large.
【０００４】そこで、係る問題点を解決すべく、導通抵
抗の小さいＡｇ、Ｃｕ等と同時焼成可能な低温焼成の誘
電体セラミックスが提案されている。例えば、特開平８
−２０８３３０号公報に開示された低温焼成磁器組成物
は、ＭｇＯ、ＣａＯ、ＴｉＯ 2とからなる誘電体成分
と、Ｂ2Ｏ3、Ｌｉ2ＣＯ3とからなる助剤成分とからなる
ものであり、９００〜１０５０℃の比較的低温でＡｇ、
Ｃｕ等の内部導体と同時に焼成でき、焼成後の低温焼成
磁器の比誘電率εｒが１８以上、測定周波数７ＧＨｚで
のＱ値が２０００以上の優れた特性を有し、高周波電子
部品の小型化と多機能化を実現できるものであった。[0004] In order to solve such a problem, a conductive resistor is used.
Induction of low-temperature firing that can be co-fired with Ag, Cu, etc. with low resistance
Electrical ceramics have been proposed. For example, JP-A-8
-Fired porcelain composition disclosed in JP-A-208330
Is MgO, CaO, TiO TwoDielectric component consisting of
And BTwoOThree, LiTwoCOThreeAnd an auxiliary component consisting of
Ag at a relatively low temperature of 900 to 1050 ° C.
Can be fired simultaneously with internal conductors such as Cu, and fired at low temperature after firing
When the relative permittivity εr of the porcelain is 18 or more and the measurement frequency is 7 GHz
Has excellent characteristics with a Q value of 2000 or more,
The components could be made smaller and more multifunctional.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら特開平８
−２０８３３０号公報に開示された低温焼成磁器組成物
は、焼結温度がまだ高く、さらに焼結における収縮開始
温度が８４５〜９６０℃と高温であるため、収縮開始温
度が５００〜７００℃程度であるＡｇやＣｕを主成分と
する導体材料との焼成時の収縮挙動のマッチングが悪
く、焼成された誘電体基板が反る、歪む等の問題があっ
た。また、誘電率εｒが高いため高周波用途では寄生容
量が発生する等の回路上の制約が起こるという問題があ
った。SUMMARY OF THE INVENTION However, Japanese Patent Laid-Open No.
The low-temperature fired porcelain composition disclosed in JP-A-208330 has a high sintering temperature and a high shrinkage start temperature of 845 to 960 ° C in sintering. The matching of the shrinkage behavior during firing with a conductor material containing Ag or Cu as a main component is poor, and the fired dielectric substrate is warped or distorted. In addition, since the dielectric constant εr is high, there is a problem that circuit restrictions such as generation of parasitic capacitance occur in high frequency applications.
【０００６】したがって、本発明は、低温焼成が可能で
あり、焼成収縮開始温度が低く、ＡｇやＣｕとの収縮挙
動のマッチング性に優れ、導体材料との同時焼成におい
ても基板の反りなどの発生を防止することができる低温
焼結性の低温焼成磁器組成物および低温焼成磁器を提供
することを目的とするものである。Accordingly, the present invention can be fired at a low temperature, has a low firing shrinkage initiation temperature, has excellent matching properties of shrinkage behavior with Ag and Cu, and has a possibility of warping of a substrate even when fired simultaneously with a conductor material. It is an object of the present invention to provide a low-temperature sintering ceramic composition and a low-temperature sintering porcelain having a low-temperature sintering property capable of preventing sintering.
【０００７】[0007]
【課題を解決するための手段】本発明者等は、上記問題
点を解決すべく鋭意検討した結果、誘電体フィラー成分
として、Ａｌ18Ｂ4Ｏ33とＭｇＴｉＯ3を用いて、これに
特定のガラス成分を添加混合することによって、上記目
的が達成できることを見いだし、本発明に至った。The present inventors have conducted intensive studies to solve the above-mentioned problems, and as a result, using Al 18 B 4 O 33 and MgTiO 3 as dielectric filler components, specific It has been found that the above object can be achieved by adding and mixing a glass component, and the present invention has been accomplished.
【０００８】即ち、本発明の低温焼成磁器組成物は、重
量比率による組成式を （１−ｘ）Ａｌ18Ｂ4Ｏ33−ｘＭｇＴｉＯ3 と表した時、前記ｘが、０≦ｘ≦０．６を満足する主成
分１００重量部に対して、ＢをＢ2Ｏ3換算で３〜２０重
量部、ＬｉをＬｉ2ＣＯ3換算で１〜１０重量部、Ｓｉを
ＳｉＯ2換算で０〜３０重量部、Ｍｇ、Ｃａ、Ｓｒ、Ｂ
ａの群から選ばれる少なくとも１種を酸化物換算で１〜
５重量部、ＭｎをＭｎＯ2換算で０．１〜１５重量部の
割合で含有することを特徴とするものである。That is, in the low-temperature fired porcelain composition of the present invention, when the composition formula based on the weight ratio is expressed as (1-x) Al 18 B 4 O 33 -xMgTiO 3 , x is 0 ≦ x ≦ 0. B is 3 to 20 parts by weight in terms of B 2 O 3 , Li is 1 to 10 parts by weight in terms of Li 2 CO 3 , and Si is 0 to 30 in terms of SiO 2 , based on 100 parts by weight of the main component satisfying 6. Parts by weight, Mg, Ca, Sr, B
at least one selected from the group of a
It is characterized by containing 5 parts by weight and Mn in a ratio of 0.1 to 15 parts by weight in terms of MnO 2 .
【０００９】また、本発明の低温焼成磁器は、少なくと
もＡｌ18Ｂ4Ｏ33結晶相を含む誘電体結晶相と、少なく
ともＬｉ、Ｂ、アルカリ土類元素を含有するガラス相と
からなることを特徴とするものであって、さらには（Ｍ
ｇ，Ｔｉ）2（ＢＯ3）Ｏ結晶相を含むことによってＱ値
をさらに高めることができ、比誘電率が５〜１２で、測
定周波数２ＧＨｚでのＱ値が５００以上であることを特
徴とするものである。Further, the low-temperature fired porcelain of the present invention is characterized in that it comprises a dielectric crystal phase containing at least an Al 18 B 4 O 33 crystal phase and a glass phase containing at least Li, B and an alkaline earth element. And (M
g, Ti) 2 (BO 3 ) O The crystal phase can be further increased by including a crystal phase, the relative dielectric constant is 5 to 12, and the Q value at a measurement frequency of 2 GHz is 500 or more. Is what you do.
【００１０】[0010]
【発明の実施の形態】本発明の低温焼成磁器組成物は、
重量比率による組成式を （１−ｘ）Ａｌ18Ｂ4Ｏ33−ｘＭｇＴｉＯ3 と表した時、前記ｘが、０≦ｘ≦０．６を満足する主成
分１００重量部に対して、ＢをＢ2Ｏ3換算で３〜２０重
量部、ＬｉをＬｉ2ＣＯ3換算で１〜１０重量部、Ｓｉを
ＳｉＯ2換算で０〜３０重量部、Ｍｇ、Ｃａ、Ｓｒ、Ｂ
ａの群から選ばれる少なくとも１種を酸化物換算で１〜
５重量部、ＭｎをＭｎＯ2換算で０．１〜１５重量部添
加含有してなるものである。BEST MODE FOR CARRYING OUT THE INVENTION The low-temperature fired porcelain composition of the present invention comprises:
When the composition formula based on the weight ratio is expressed as (1-x) Al 18 B 4 O 33 —xMgTiO 3 , B is defined as follows: 100 parts by weight of the main component satisfying 0 ≦ x ≦ 0.6. 3 to 20 parts by weight in terms of B 2 O 3 , 1 to 10 parts by weight of Li in terms of Li 2 CO 3 , 0 to 30 parts by weight of Si in terms of SiO 2 , Mg, Ca, Sr, B
at least one selected from the group of a
5 parts by weight, and 0.1 to 15 parts by weight of Mn in terms of MnO 2 are added and contained.
【００１１】上記主成分組成において、ｘを０≦ｘ≦
０．６としたのは、ｘが０．６を越える場合には、誘電
率が１２を超えるためである。とりわけ低温焼成磁器の
誘電率を低くするためにはｘは０≦ｘ≦０．２が好まし
い。In the above main component composition, x is 0 ≦ x ≦
The reason for setting to 0.6 is that when x exceeds 0.6, the dielectric constant exceeds 12. In particular, x is preferably 0 ≦ x ≦ 0.2 in order to lower the dielectric constant of the low-temperature fired porcelain.
【００１２】また、上記のガラス成分において、ＢをＢ
2Ｏ3換算で３〜２０重量部添加したのは、Ｂ2Ｏ3の添加
量が３重量部未満の場合には１１００℃でも焼結が難し
く、ＡｇまたはＣｕを主成分とする導体と同時焼成がで
きなくなり、逆に２０重量部を越える場合には、焼結体
中のガラス相の割合が増加して、Ｑ値が低下するからで
ある。よって、焼結性を維持し、高いＱ値を得るという
観点からＢ2Ｏ3換算で５〜１５重量部が望ましい。Ｂ
（硼素）を組成物中に導入するには、金属硼素、または
硼素含有化合物で導入でき、硼素含有化合物としては、
Ｂ2Ｏ3、コレマイト、ＣａＢ2Ｏ4、ホウケイ酸ガラス、
ホウケイ酸アルカリガラス、ホウケイ酸アルカリ土類ガ
ラスの群から選ばれる少なくとも１種が挙げられる。In the above glass component, B is replaced with B
2 O 3 was added 3 to 20 parts by weight in terms are difficult 1100 ° C. But sintering when the added amount of B 2 O 3 is less than 3 parts by weight, simultaneously with the conductor mainly composed of Ag or Cu This is because if the firing cannot be performed and the amount exceeds 20 parts by weight, the ratio of the glass phase in the sintered body increases and the Q value decreases. Therefore, maintaining the sinterability, 5 to 15 parts by weight from the viewpoint of obtaining a high Q value in terms of B 2 O 3 is desirable. B
In order to introduce (boron) into the composition, metal boron or a boron-containing compound can be introduced.
B 2 O 3 , colemitite, CaB 2 O 4 , borosilicate glass,
At least one selected from the group consisting of alkali borosilicate glass and alkaline earth borosilicate glass is exemplified.
【００１３】またＬｉをＬｉ2ＣＯ3換算で１〜１０重量
部添加したのは、添加量が１重量部未満の場合には１１
００℃でも焼結が難しく、ＡｇまたはＣｕを主成分とす
る導体と同時焼成ができなくなり、逆に１０重量部を越
える場合には、Ｑ値が低下するからである。焼結性と低
温焼成磁器のＱ値の観点から４〜９重量部が望ましい。The reason why Li is added in an amount of 1 to 10 parts by weight in terms of Li 2 CO 3 is that when the addition amount is less than 1 part by weight,
This is because sintering is difficult even at 00 ° C., and simultaneous sintering with a conductor containing Ag or Cu as a main component cannot be performed. Conversely, if it exceeds 10 parts by weight, the Q value decreases. From the viewpoint of sinterability and the Q value of the low-temperature fired porcelain, 4 to 9 parts by weight is desirable.
【００１４】さらにＳｉをＳｉＯ2換算で０〜３０重量
部添加したのは、３０重量部を越えると、低温焼成磁器
中の結晶相（Ｍｇ，Ｔｉ）2（ＢＯ3）Ｏの割合が減少し
てＱ値が低下するからである。低温焼成磁器のＱ値の観
点からは、ＳｉＯ2は０〜１０重量部が望ましい。Further, the addition of Si in an amount of 0 to 30 parts by weight in terms of SiO 2 means that, when the amount exceeds 30 parts by weight, the proportion of the crystal phase (Mg, Ti) 2 (BO 3 ) O in the low-temperature fired porcelain decreases. This is because the Q value decreases. In terms of the Q value of the low-temperature fired porcelain, SiO 2 is preferably 0 to 10 parts by weight.
【００１５】本発明の低温焼成磁器組成物では、主成分
１００重量部に対して、さらにアルカリ土類酸化物（Ｍ
ｇＯ，ＣａＯ，ＳｒＯ，ＢａＯ）を１種以上１〜５重量
部添加含有するものである。これらが１重量部未満の場
合には、低温焼成磁器の焼結過程における収縮開始温度
が約８５０℃と高く目的が達成されず、５重量部を越え
ると、低温焼成磁器のＱ値が低下する。とりわけ低温焼
成磁器の焼結性とＱ値の観点からはアルカリ土類酸化物
（ＭｇＯ，ＣａＯ，ＳｒＯ，ＢａＯ）は、合計１．５〜
３．５重量部が好ましい。In the low-temperature fired porcelain composition of the present invention, alkaline earth oxide (M
gO, CaO, SrO, BaO). When the amount is less than 1 part by weight, the shrinkage starting temperature in the sintering process of the low-temperature fired porcelain is as high as about 850 ° C., and the object is not achieved. When the amount exceeds 5 parts by weight, the Q value of the low-temperature fired porcelain decreases. . In particular, from the viewpoint of the sinterability and the Q value of the low-temperature fired porcelain, alkaline earth oxides (MgO, CaO, SrO, BaO) are in total of 1.5 to
3.5 parts by weight are preferred.
【００１６】またＭｎをＭｎＯ2換算で０．１〜１５重
量部添加したのは、添加量が１重量部未満の場合には過
程における収縮開始温度が約８５０℃と高く目的が達成
されず、逆に１５重量部を越える場合には、Ｑ値が低下
するからである。焼結性と低温焼成磁器のＱ値の観点か
ら３〜９重量部が望ましい。The reason for adding 0.1 to 15 parts by weight of Mn in terms of MnO 2 is that when the added amount is less than 1 part by weight, the shrinkage starting temperature in the process is as high as about 850 ° C., and the object cannot be achieved. Conversely, if the amount exceeds 15 parts by weight, the Q value decreases. From the viewpoint of the sinterability and the Q value of the low-temperature fired porcelain, 3 to 9 parts by weight is desirable.
【００１７】本発明の低温焼成磁器組成物は、原料粉末
として、Ａｌ18Ｂ4Ｏ33、ＭｇＴｉＯ3粉末、およびＢ2
Ｏ3などの硼素含有化合物、Ｌｉ2ＣＯ3、ＳｉＯ2、アル
カリ土類酸化物（ＭｇＯ，ＣａＯ，ＳｒＯ，ＢａＯ）の
各粉末、もしくはこれらを含むガラスフリットを準備
し、これらを上記した組成比となるように秤量し、Ｚｒ
Ｏ2ボール等によって粉砕混合し、この混合粉末を６５
０〜８５０℃で仮焼した後、再度ボールミルで粉砕粒径
が２．５μｍ以下になるまで粉砕混合する。The low-temperature fired porcelain composition of the present invention comprises, as raw material powders, Al 18 B 4 O 33 , MgTiO 3 powder, and B 2
Powders of boron-containing compounds such as O 3 , Li 2 CO 3 , SiO 2 , alkaline earth oxides (MgO, CaO, SrO, BaO), or glass frit containing them are prepared, and the above composition ratios are prepared. Weighed so that Zr
Pulverized and mixed with an O 2 ball or the like,
After calcining at 0 to 850 ° C., the mixture is pulverized and mixed again by a ball mill until the pulverized particle size becomes 2.5 μm or less.
【００１８】その後、この仮焼粉末をプレス成形やドク
ターブレード法等の公知の方法により所定形状に成形
し、大気中または酸素雰囲気中または窒素雰囲気等の非
酸化性雰囲気において８７０〜９２０℃で０．５〜２時
間焼成することにより得られる。Thereafter, the calcined powder is formed into a predetermined shape by a known method such as press molding or a doctor blade method, and is heated at 870 to 920 ° C. in a non-oxidizing atmosphere such as an air atmosphere, an oxygen atmosphere, or a nitrogen atmosphere. It is obtained by firing for 0.5 to 2 hours.
【００１９】なお、原料粉末は、上記以外に、焼成によ
り酸化物を生成する水酸化物、炭酸塩、硝酸塩等の金属
塩を用いても良い。本発明の低温焼成磁器中には、不可
避不純物としてＡｌ，Ｆｅ，Ｈｆ，Ｓｎ，Ｚｒ等が含ま
れることもあるが、それらは０．１重量％以下であれば
特に問題はない。In addition, in addition to the above, metal salts such as hydroxides, carbonates, and nitrates that generate oxides by firing may be used as the raw material powder. The low-temperature fired porcelain of the present invention may contain Al, Fe, Hf, Sn, Zr and the like as unavoidable impurities, but there is no particular problem if they are 0.1% by weight or less.
【００２０】このようにして作製された低温焼成磁器
は、少なくともＡｌ18Ｂ4Ｏ33結晶相を含む誘電体結晶
相と、少なくともＬｉと硼素（Ｂ）を含有するガラス相
とから構成され、さらには誘電体結晶相として、（Ｍ
ｇ，Ｔｉ）2（ＢＯ3）Ｏ結晶相を含むものである。ま
た、ガラス相中には、硼素（Ｂ）以外に、Ｌｉ、Ｓｉ、
アルカリ土類元素、およびＭｎを含有する場合もある。The low-temperature fired porcelain thus manufactured is composed of a dielectric crystal phase containing at least Al 18 B 4 O 33 crystal phase and a glass phase containing at least Li and boron (B). Is a dielectric crystal phase, (M
g, Ti) 2 (BO 3 ) O crystalline phase. In addition, in the glass phase, in addition to boron (B), Li, Si,
It may contain an alkaline earth element and Mn.
【００２１】また、本発明による低温焼成磁器は、磁器
の誘電体特性として、比誘電率が５〜１２で、測定周波
数２ＧＨｚでのＱ値が５００以上、特に６００以上の優
れた特性を有するものである。The low-temperature fired porcelain according to the present invention has excellent dielectric properties such as a dielectric constant of 5 to 12 and a Q value at a measurement frequency of 2 GHz of 500 or more, particularly 600 or more. It is.
【００２２】[0022]
【実施例】原料として純度９９％以上の、Ａｌ18Ｂ4Ｏ
33粉末、ＭｇＴｉＯ3粉末、およびＢ2Ｏ3、Ｌｉ2Ｃ
Ｏ3、ＳｉＯ2、アルカリ土類酸化物（ＭｇＯ，ＣａＯ，
ＳｒＯ，ＢａＯ）、ＭｎＯ2粉末を含むガラスフリット
を、表１に示す割合となるように秤量し、純水を媒体と
し、ＺｒＯ2ボールを用いたボ−ルミルにて２０時間湿
式混合した。次にこの混合物を乾燥（脱水）し、８００
℃で１時間仮焼した。この仮焼物を、粉砕粒径が１．４
μｍ以下になるように粉砕し、誘電特性評価用の試料と
して直径６０ｍｍ、高さ２ｍｍの円柱状に１ｔｏｎ／ｃ
ｍ2の圧力でプレス成形し、これを９００℃で２時間焼
成し、直径５０ｍｍ、高さ１ｍｍの円柱状の試料を得
た。[Example] Al 18 B 4 O having a purity of 99% or more as a raw material
33 powder, MgTiO 3 powder, and B 2 O 3 , Li 2 C
O 3 , SiO 2 , alkaline earth oxides (MgO, CaO,
A glass frit containing SrO, BaO) and MnO 2 powders was weighed so as to have a ratio shown in Table 1, and wet-mixed with pure water as a medium in a ball mill using ZrO 2 balls for 20 hours. The mixture is then dried (dehydrated) and
Calcination was performed at ℃ for 1 hour. This calcined product was ground to a pulverized particle size of 1.4.
ｍμm or less, and as a sample for dielectric property evaluation, 1 ton / c in a cylindrical shape with a diameter of 60 mm and a height of 2 mm
It was press-molded at a pressure of m 2 and fired at 900 ° C. for 2 hours to obtain a cylindrical sample having a diameter of 50 mm and a height of 1 mm.
【００２３】誘電特性の評価は、前記試料を用いて誘電
体円柱共振器法にて周波数２ＧＨｚにおける比誘電率
（εｒ）とＱ値を測定した。The dielectric properties were evaluated by measuring the relative dielectric constant (εr) and the Q value at a frequency of 2 GHz using the above-mentioned sample by the dielectric cylinder resonator method.
【００２４】なお、上記の焼結過程における収縮開始温
度を測定した。この収縮開始温度は、プレス成形した試
料をＴＭＡ（熱機械分析）にて分析を行い、その収縮カ
ーブから測定した。The shrinkage onset temperature in the above sintering process was measured. The shrinkage onset temperature was measured from the shrinkage curve by analyzing a press-formed sample by TMA (thermomechanical analysis).
【００２５】また、得られた低温焼成磁器について、Ｘ
線回折測定を行い、検出結晶相の同定を行なった。ま
た、結晶相の粒界に存在するガラス相を純水による煮沸
によって溶出し、ガラス中の金属成分をＩＣＰ分析によ
って同定した。Further, the obtained low-temperature fired porcelain
A line diffraction measurement was performed to identify a detected crystal phase. Further, the glass phase existing at the grain boundary of the crystal phase was eluted by boiling with pure water, and the metal component in the glass was identified by ICP analysis.
【００２６】さらに各組成物を用いてドクターブレード
法によってグリーンシートを作製するとともに、各シー
トの表面にＣｕペーストまたはＡｇペーストを印刷塗布
し、７層積層して、Ｃｕでは窒素雰囲気中で、Ａｇでは
大気中で表２の温度で焼成して、外径サイズが、５０×
５０ｍｍの多数個取りの配線基板を作製した。得られた
配線基板の凹面側を平坦面に接するように載せ、平坦面
との間に形成された最大高さを反り量として測定した。Further, a green sheet is prepared by a doctor blade method using each composition, and a Cu paste or an Ag paste is printed and applied on the surface of each sheet, and seven layers are laminated. Then, it is fired in the atmosphere at the temperature shown in Table 2 and the outer diameter size is 50 ×
A multi-cavity wiring board of 50 mm was manufactured. The concave side of the obtained wiring board was placed so as to be in contact with the flat surface, and the maximum height formed between the flat surface and the flat surface was measured as the amount of warpage.
【００２７】[0027]
【表１】 [Table 1]
【００２８】[0028]
【表２】 [Table 2]
【００２９】この表１，２から明らかなように、本発明
の組成範囲を満足する試料Ｎｏ．１〜５、１０、１１、
１５、１７〜２０は、いずれも比誘電率が５〜１２、Ｑ
値が５００以上の優れた誘電特性を有するとともに、６
８０〜７８０℃で焼結収縮が開始し、９２０℃以下での
焼結が可能で優れた焼結性を有していた。また、Ｃｕや
Ａｇとの同時焼結性においても、反り量が１００μｍ以
下の非常に平坦性に優れた配線基板を作製することがで
きた。As is clear from Tables 1 and 2, Sample No. 3 satisfying the composition range of the present invention. 1-5, 10, 11,
15, 17 to 20 each have a relative dielectric constant of 5 to 12, Q
Value of 500 or more, and 6
Sintering shrinkage started at 80 to 780 ° C, and sintering at 920 ° C or lower was possible and had excellent sinterability. In addition, a wiring board having extremely excellent flatness with a warpage of 100 μm or less in terms of simultaneous sinterability with Cu and Ag was also produced.
【００３０】[0030]
【発明の効果】以上詳述した通り、本発明によれば、焼
成温度を８７０〜９２０℃に、収縮開始温度を６８０〜
７８０℃とすることが可能となるため、ＡｇやＣｕ等の
導体金属と同時に焼成でき、その際、導体金属の収縮挙
動のミスマッチから発生する基板の反りや歪みが抑制さ
れるとともに高周波領域において適切な誘電率とＱ値、
良好な耐湿性を有するため、電子部品や基板の小型・高
性能化が実現できる。As described in detail above, according to the present invention, the firing temperature is set to 870-920 ° C., and the shrinkage starting temperature is set to 680-920 ° C.
Since the temperature can be raised to 780 ° C., it can be fired at the same time as a conductive metal such as Ag or Cu. Dielectric constant and Q value,
Since it has good moisture resistance, miniaturization and high performance of electronic components and substrates can be realized.
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Claims (4)
分１００重量部に対して、ＢをＢ2Ｏ3換算で３〜２０重
量部、ＬｉをＬｉ2ＣＯ3換算で１〜１０重量部、Ｓｉを
ＳｉＯ2換算で０〜３０重量部、Ｍｇ、Ｃａ、Ｓｒ、Ｂ
ａの群から選ばれる少なくとも１種を酸化物換算で１〜
５重量部、ＭｎをＭｎＯ2換算で０．１〜１５重量部の
割合で含有することを特徴とする低温焼成磁器組成物。When a composition formula based on a weight ratio is expressed as (1-x) Al 18 B 4 O 33 -xMgTiO 3 , x is defined as 100 parts by weight of a main component satisfying 0 ≦ x ≦ 0.6. On the other hand, B is 3 to 20 parts by weight in terms of B 2 O 3 , Li is 1 to 10 parts by weight in terms of Li 2 CO 3 , Si is 0 to 30 parts by weight in terms of SiO 2 , Mg, Ca, Sr, B
at least one selected from the group of a
5 parts by weight, low-temperature sintered ceramic composition characterized by containing in a proportion of 0.1 to 15 parts by weight MnO 2 in terms of Mn.
電体結晶相と、少なくともＬｉ、Ｂ、アルカリ土類元素
を含有するガラス相とからなることを特徴とする低温焼
成磁器。2. A low-temperature fired porcelain comprising a dielectric crystal phase containing at least an Al 18 B 4 O 33 crystal phase and a glass phase containing at least Li, B and an alkaline earth element.
2（ＢＯ3）Ｏ結晶相を含むことを特徴とする請求項２記
載の低温焼成磁器。3. The method according to claim 1, wherein the crystal phase further comprises (Mg, Ti)
3. The low-temperature fired porcelain according to claim 2, comprising a 2 (BO3) O crystal phase.
ｚでのＱ値が５００以上であることを特徴とする請求項
２または請求項３記載の低温焼成磁器。4. A relative dielectric constant of 5 to 12 and a measurement frequency of 2 GHz
4. The low-temperature fired porcelain according to claim 2, wherein the Q value at z is 500 or more.
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|---|---|---|---|
| JP2000259676A JP4618856B2 (en) | 2000-08-29 | 2000-08-29 | Low temperature fired porcelain |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000259676A JP4618856B2 (en) | 2000-08-29 | 2000-08-29 | Low temperature fired porcelain |
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| Publication Number | Publication Date |
|---|---|
| JP2002068828A true JP2002068828A (en) | 2002-03-08 |
| JP4618856B2 JP4618856B2 (en) | 2011-01-26 |
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| CN113880426A (en) * | 2021-11-11 | 2022-01-04 | 广东省科学院新材料研究所 | Microcrystalline glass brazing filler metal for ceramic connection, preparation method thereof and ceramic connection method |
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| JPH04130052A (en) * | 1990-06-13 | 1992-05-01 | Mitsui Mining Co Ltd | Starting material composition for ceramic substrate and production of substrate using the same |
| JP3631607B2 (en) * | 1997-09-26 | 2005-03-23 | 京セラ株式会社 | High frequency dielectric ceramics and laminates |
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| CN113880426A (en) * | 2021-11-11 | 2022-01-04 | 广东省科学院新材料研究所 | Microcrystalline glass brazing filler metal for ceramic connection, preparation method thereof and ceramic connection method |
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