JP4617684B2 - 半導体レーザ素子 - Google Patents

半導体レーザ素子 Download PDF

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Publication number
JP4617684B2
JP4617684B2 JP2004048289A JP2004048289A JP4617684B2 JP 4617684 B2 JP4617684 B2 JP 4617684B2 JP 2004048289 A JP2004048289 A JP 2004048289A JP 2004048289 A JP2004048289 A JP 2004048289A JP 4617684 B2 JP4617684 B2 JP 4617684B2
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Japan
Prior art keywords
layer
gaas
semiconductor laser
conductivity type
algaas
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Expired - Fee Related
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JP2004048289A
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Japanese (ja)
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JP2005243722A (ja
JP2005243722A5 (enExample
Inventor
重吾 御友
智公 日野
啓修 成井
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Sony Corp
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Sony Corp
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Priority to JP2004048289A priority Critical patent/JP4617684B2/ja
Publication of JP2005243722A publication Critical patent/JP2005243722A/ja
Publication of JP2005243722A5 publication Critical patent/JP2005243722A5/ja
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Publication of JP4617684B2 publication Critical patent/JP4617684B2/ja
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JP2004048289A 2004-02-24 2004-02-24 半導体レーザ素子 Expired - Fee Related JP4617684B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004048289A JP4617684B2 (ja) 2004-02-24 2004-02-24 半導体レーザ素子

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JP2004048289A JP4617684B2 (ja) 2004-02-24 2004-02-24 半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2005243722A JP2005243722A (ja) 2005-09-08
JP2005243722A5 JP2005243722A5 (enExample) 2006-10-12
JP4617684B2 true JP4617684B2 (ja) 2011-01-26

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Family Applications (1)

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JP2004048289A Expired - Fee Related JP4617684B2 (ja) 2004-02-24 2004-02-24 半導体レーザ素子

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JP (1) JP4617684B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100382347C (zh) * 2005-10-20 2008-04-16 中国科学院半导体研究所 砷化镓基1.5微米量子阱结构及其外延生长方法
JP2007258269A (ja) * 2006-03-20 2007-10-04 Sumitomo Electric Ind Ltd 半導体光素子
JP2008211142A (ja) * 2007-02-28 2008-09-11 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE506651C2 (sv) * 1996-02-27 1998-01-26 Ericsson Telefon Ab L M Begravd heterostruktur
JP4219010B2 (ja) * 1997-06-23 2009-02-04 シャープ株式会社 半導体レーザ装置
JP3189791B2 (ja) * 1998-06-19 2001-07-16 日本電気株式会社 半導体レーザ
JP2001223437A (ja) * 2000-02-07 2001-08-17 Hitachi Ltd 半導体レーザ装置

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JP2005243722A (ja) 2005-09-08

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